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    TRANSISTOR 2SA1870 Search Results

    TRANSISTOR 2SA1870 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1870 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JIS C7021 B-11

    Abstract: 2SA1576A 2SA1774 2SC2412K 2SC4081 2SC4617 C7021 H63A
    Text: Quality assurance and reliability Transistors Quality assurance and reliability !Quality Assurance Measures JIS Japan Industrial Standards defines reliability to be “the ability for an item to perform a required function under given conditions for a specified time”. This can be


    Original     		PDF 1000h JIS C7021 B-11 2SA1576A 2SA1774 2SC2412K 2SC4081 2SC4617 C7021 H63A

    2SA1870

    Abstract: TRANSISTOR 2SA1870
    Text: 2SA1870 Transistor, PNP Features Dimensions Units : mm • available in PSD package • low collector saturation voltage, typically VCE(sat) = -0.2 V at IC/I b = -6 A/-0.3 A high switching speed, typically tf = 0.17 us for lc = -6 A • • 2SA1870 (PSD)


    OCR Scan     		PDF 2SA1870 2SA1870 TRANSISTOR 2SA1870

    JD 1803

    Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
    Text: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)


    OCR Scan     		PDF 2SA1870 2SA1900 JD 1803 2SA1870 100V 2A MPT3 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870

    2SA1870

    Abstract: No abstract text available
    Text: 2SA1870 h ÿ 'y V 7> $ /T ra n s is to rs O C A 4 fi7 0 Epitaxial Planar PNP Silicon Transistor ¡üâüt- 7*4 y 3-> O'/High Speed Switching • f l M \f"i£E3/Dimensions Unit : mm 1) X - f tf= 0 .1 7 ms (Typ.), ( I c = —6A) 2) VcE (sat)=—0.2V (Typ.)


    OCR Scan     		PDF 2SA1870 --30V 2SA1870

    2SA1920

    Abstract: a32s 96-113-A32S 2SA1870 SC-75A two transistors TO-92 VCEO400V
    Text: 2SA1920 2SA1870 Transistors High-voltage switching Transistor Camera strobes and Telephone, Power supply I 2S A 19 20 • A b s o lu t e m axim um ratings (T a —2 5 ^ ) •F e a t u r e s 1 ) High breakdown voltage. 2) (V ceo“ — 4 0 0 V ) 3 ) Fast switching, ( t f : Typ. 1


    OCR Scan     		PDF 2SA1920 2SA1870 2SA1920 100mA) O-220FP O-220 O-126 O-220, 0Dlb713 a32s 96-113-A32S SC-75A two transistors TO-92 VCEO400V

    2SA1920

    Abstract: 2SA1670 2sa192 2SA1870
    Text: 2SA1920 2SA1870 Transistors High-voltage switching Transistor Camera strobes and Telephone, Power supply 2SA1920 •F e a tu re s •A b s o lu te maximum ratings 1 ) H ig h b r e a k d o w n v o lta g e . (V c e o = — 4 0 0 V ) 2) L o w V c e (m ij .


    OCR Scan     		PDF 2SA1920 2SA1870 2SA1920 100mA) 2SA1920~ -50/iA 2SA1670 2sa192 2SA1870

    2SA1920

    Abstract: saj 100
    Text: 2SA1920 Transistors 2SA1870 High-voltage switching Transistor Camera strobes and Telephone, Power supply I 2SA1920 • F e a tu re s 1) 2) 3) 4 ) • A b so lu te maximum ratings (Ta=25'C ) H igh breakdow n volts« . (V c eo — — 4 00 V ) Low VcE(saj). (Typ.— 0 .2 V at Ic/ie— — 20/— 2mA)'


    OCR Scan     		PDF 2SA1920 2SA1870 100ms ---100m 96-113-A325) 2SA1920 saj 100

    2SC5053 NPN

    Abstract: B-2180
    Text: M* Transistors/Surface I' tr4 » w - Mounting Type • MPT3 • CPT3 Package MPT3 series includes mini molded power transistor models rated at Pc=0.5 to 2 W SC-62 ; CPT F5 series are surface mounting power transistors. Part No. Application PNP 2S02167 - -


    OCR Scan     		PDF SC-62) 2S02167 2SD1664 2SD1766 2SD1767 2SC5053 2SD2318 2SA1759 2SA1812 2SC4505 2SC5053 NPN B-2180

    transistor 390

    Abstract: 2SD1834
    Text: Bipolar transistors-2SA series MPT3, CPT F5, and PSD summary Table 2 Bipolar transistor MPT3, CPT F5, and PSD summary Sheet 1 of 2 Package Appli­ cation VCEO •c max * V CES * V CER (A) (A) 2SB1132 -32 -1 -2 2★ 2SA1900 -50 -1 -2 2★ -50 -3 -4.5 -32


    OCR Scan     		PDF 2SB1132 2SA1900 2SB1184 2SB1188 2SB1181 2SC4132 2SD1664 2SC5053 2SD1760 2SD1766 transistor 390 2SD1834

    transistor b1184

    Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
    Text: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K


    OCR Scan     		PDF 2SA1037AKLN V2SC41 2412K 3722K 4642K A1037AK 2411K B1197K 2SA1727 transistor b1184 B1474 C5072 C4938 b1184 transistor c4998 2SB1051 K2306 2sc4937

    2SC4672 equivalent

    Abstract: 2SC2412KX2 2SC1514K equivalent 2sa1455k SO68 2SB1181F5 equivalent csc 354 2SB1386 equivalent FMC3A FMW5
    Text: h /T ra n sisto rs /\°'y JT — v ^ J ^ fp p — f l ü / L i s t of Products for Each Package • EM3 Extreme M ini-m old 3pir Part No. Application V c e o (V) IC(A) iC Max.(A) PC(W) fj(M H z) Cob(pF) Page h FE lc(mA) V c e (V) 2SC4617 Pre Amp 50 0 15


    OCR Scan     		PDF 2SC4617 2SC4618 2SC4619 2SC4649 2SA1576A 2SA1577 2SA1579 2SA1808 2SC4081 2SC4082 2SC4672 equivalent 2SC2412KX2 2SC1514K equivalent 2sa1455k SO68 2SB1181F5 equivalent csc 354 2SB1386 equivalent FMC3A FMW5

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


    OCR Scan     		PDF Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89)

    2SC5119

    Abstract: 2SD2170 2SD1834 2SB1516 2SD2153 2SA1900 2SB1132 2SB1181 2SB1182 2SB1184
    Text: mmm MPT • CPT F5 • PSD Application MPT CPT F5 Circuit 82—390 P Q R -3 -1 0 0 - 2SA1900 - - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 —390 P Q R -3 -5 0 0 - - -8 0 - 0 .7


    OCR Scan     		PDF 2SB1132 2SA1900 2SB1184 2SB1188 2SB1182 2SB1189 2SB1260 2SB1181 2SB1275 2SB1516 2SC5119 2SD2170 2SD1834 2SD2153

    Untitled

    Abstract: No abstract text available
    Text: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*


    OCR Scan     		PDF 2SB1132 2SA1900 --200k OT-89)

    TA143E

    Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
    Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0


    OCR Scan     		PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 RU101 RU201 RU901 TA143E 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE