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    TRANSISTOR 2N 3906 Search Results

    TRANSISTOR 2N 3906 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N 3906 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2646 ujt

    Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
    Text: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0


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    PDF 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE

    3904

    Abstract: NPN transistor 2n 3904 transistor 3904 2N 3904 transistor TRANSISTOR 2N 3904 tr 3904 2N3904 3904 TRANSISTOR PNP 1/2N 3904 3904 TRANSISTOR npn
    Text: HN/2N 3903/3904 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors HN / 2N 3905 and HN / 2N 3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


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    3906

    Abstract: transistor 3906 3905 TRANSISTOR 2N 3906 NPN transistor 2n 3906 2N 3904 transistor 3906 TRANSISTOR npn transistor 2N 3904 transistor pnp 3906 pnp transistor 2n 3906
    Text: HN/ 2N 3905/3906 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors HN / 2N3903 and HN / 2N 3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


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    PDF 2N3903 3906 transistor 3906 3905 TRANSISTOR 2N 3906 NPN transistor 2n 3906 2N 3904 transistor 3906 TRANSISTOR npn transistor 2N 3904 transistor pnp 3906 pnp transistor 2n 3906

    2N3906

    Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
    Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage


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    PDF 2N3905/3906 625mW 2N3906 Widths300 -30-SO DD2S024 transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906

    2N3906

    Abstract: 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906
    Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF 625mW 2N3906 --10m 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906

    d 772 transistor

    Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain
    Text: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.


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    PDF bbS3T31 2N3904 2N3906. 7Z749B8_ d 772 transistor 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain

    n3904

    Abstract: 2N3904 die 2N3904 2N3906
    Text: 2N3904 VISHAY NPN SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N 3906


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    PDF 2N3904 2N3906) MIL-STD-202, 2N3904 100kHz 100nA, 15000Hz 300ns, DS11102 n3904 2N3904 die 2N3906

    TR 3906 PNP SM

    Abstract: N3906 2N3906-G 2N3905
    Text: NEC PNP SILICON TRANSISTORS ELECTRON DEVICE 2N3905,2N3906 GENERAL PURPOSE SW ITCHING AND AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR 2 DESCRIPTION The 2N 3905, 2N3906 are PNP transistors, designed for general purpose switching and amplifier application, feature


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    PDF 2N3905 2N3906 2N3906 --10mA N3904 TR 3906 PNP SM N3906 2N3906-G

    t1d6

    Abstract: PN3906 t1d6 transistor RXT3904 SST3904 UMT3904 SPEC-C37 r1a transistor 2N3904 MMST3904
    Text: Transistors I NPN General Purpose Transistor UM T3904/SST3904/M M S T3904/R XT3904/2N 3904 • F e a tu re s • E x te r n a l d im e n s io n s U n its : m m 1 ) B V ceo < 4 0 V (lc = 1 m A > 2 ) C o m p le m e n ts th e U M T 3 9 0 6 /S S T 3 9 0 6 /M M S T 3 9 0 6 /R X T 3 9 0 6 /P N 3906.


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    PDF UMT3904/SST3904/MMST3904/RXT3904/2N3904 UMT3906/SST3906/MMST3906/RXT3906/PN3906 UMT3904 SST3904 V1MST3904 RXT3904 2N3904 t1d6 PN3906 t1d6 transistor SPEC-C37 r1a transistor 2N3904 MMST3904

    transistor pnp 3906

    Abstract: transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 2N3906 3906 pnp 3906 TRANSISTOR
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: Veto* 40V • Collector DiMipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF 2N3905/3906 625mW 2N3906 transistor pnp 3906 transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 3906 pnp 3906 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF 2N3905/3906 625mW 2N3906 300//s, 7Tb414E 0D2S02M

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310

    transistor 2N 3904

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most


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    PDF 14-pin TPQA05 TPQ2222A TPQ6427 TPQA06 TPQ2907 TPQ5401 TPQA56 TPQ2907A TPQ3906 transistor 2N 3904

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


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    PDF 14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    BCM 4359

    Abstract: transistor 4287 AB transistor 3901
    Text: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A


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    PDF O-237 MELF-002, MELF006 L0T17aa O-181LOW BCM 4359 transistor 4287 AB transistor 3901

    BC 540 TRANSISTOR

    Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/


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    PDF 2N3415 2N3711 30duit BC 540 TRANSISTOR transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    NPN switching transistor 2N4403

    Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, NPN switching transistor 2N4403 NPN transistor 2n 3904 transistor 2N 3904

    lm 3904

    Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
    Text: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications


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    PDF T3906/SST3906/M ST3906/RXT3906/PN UMT3904/SST3904/MMST3904/RXT3904/2N3904 T3904 ST3904 RXT3904 T3904, UMT3904 SST3904 MMST3904 lm 3904 2N3904 T 2n390 2N3904TA 2N3904

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    2N4401 die

    Abstract: dtc 22k 47k rohm "digital transistor" sst 2222A EQUIVALENT transistor digital 47k 22k PNP NPN TR 3906 PNP SM DTA214Y transistor digital 4.7k 4.7k PNP dta eel -16 sl 5510-1
    Text: Digital Transistors M APPLICATION: • Inverter , Driver & Interface C ircuits • FEATURES: • • • • Replaces up to three parts 1 transistor & 2 resistors w ith one part Available in a variety o f surface m ount or leaded (th ru -h o le ) packages


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    PDF 100mA 2N4401 die dtc 22k 47k rohm "digital transistor" sst 2222A EQUIVALENT transistor digital 47k 22k PNP NPN TR 3906 PNP SM DTA214Y transistor digital 4.7k 4.7k PNP dta eel -16 sl 5510-1

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175