TRANSISTOR 250W Search Results

TRANSISTOR 250W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 250W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Gan on silicon Abstract: 960-1215MHz jtids amplifier 250W MAGX-000 Text: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-000912-250L00 MAGX-000912-250L00 Gan on silicon 960-1215MHz jtids amplifier 250W MAGX-000	PDF
Untitled Abstract: No abstract text available Text: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-000912-250L00 MAGX-000912-250L00	PDF
MAGX-001214-250L00 Abstract: Gan on silicon transistor Gan transistor 1350 transistor Gan hemt transistor GaN TRANSISTOR 180 L-Band 1200-1400 MHz Hemt transistor Text: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-001214-250L00 MAGX-001214-250L00 Gan on silicon transistor Gan transistor 1350 transistor Gan hemt transistor GaN TRANSISTOR 180 L-Band 1200-1400 MHz Hemt transistor	PDF
Untitled Abstract: No abstract text available Text: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-001214-250L00 MAGX-001214-250L00	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
NTE352 Abstract: w65 transistor RF POWER TRANSISTOR NPN Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment	Original	NTE352 NTE352 175MHz. 175MHz 175MHz 175MHz, w65 transistor RF POWER TRANSISTOR NPN	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB2856S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT Pulsed Medical Transistor Class C Operation − High Efficiency The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base	Original	IB2856S250 IB2856S250 IB2856S250-REV-NC-DS-REV-NC	PDF
to63 Abstract: NTE70 180v 250w Text: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.	Original	NTE70 NTE70 to63 180v 250w	PDF
NPN Transistor 50A 400V Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly	Original	NTE99 NTE99 NPN Transistor 50A 400V NPN 400V 40A npn darlington 400v 15a	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for	Original	IGN2735M250 IGN2735M250 300us IGN2735M250-REV-PR1-DS-REV-A	PDF
HVV1214-250L Abstract: hvvi Text: HVV1214-250L Product Overview L-Band High Power Pulsed Transistor 2000µs Pulse Width, 10% Duty Cycle For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1214-250L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	HVV1214-250L HVV1214-250L 1200MHz 1400Mhz EG-01-PO16X1 hvvi	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with	Original	ILD1214L250 ILD1214L250 ILD1214L250-REV-NC-DS-REV-A	PDF

NPN 250W Abstract: 250w npn MRF448 transistor 250W Text: MRF448 The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.	Original	MRF448 30MHz, NPN 250W 250w npn MRF448 transistor 250W	PDF
2n6259 Abstract: No abstract text available Text: 2N6259 High Voltage - High Power Transistor. 170V - 250W. 12.98 Transistors Bipolar . Page 1 of 1 Enter Your Part # Home Part Number: 2N6259 Online Store 2N6259 Diodes Hig h V olt age - Hig h P ow er Tr ans ist or. 1 70V - 250W . Transistors Integrated Circuits	Original	2N6259 2N6259 com/2n6259	PDF
BUZ353 Abstract: 250w smps Text: /= T SGS-THOMSON BUZ353 7 # RfflO »ilLIOT RDO i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on BUZ353 500 V 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS • HIGH CURRENT - 9.5A FOR UP TO 250W	OCR Scan	BUZ353 O-218 BUZ353 250w smps	PDF
1000w inverter PURE SINE WAVE schematic diagram Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design	Original		PDF
250w smps Abstract: BUZ353 Text: /= 7 S G S -T H O M S O N ^7# MfgtHiimiltgTriMDfgS BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ353 500 V 0.6 fl 9.5 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C URRENT - 9.5A FOR UP TO 250W	OCR Scan	BUZ353 100KHz 250w smps BUZ353	PDF
NPN VCEO 800V Abstract: NTE2533 Text: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	NTE2533 100ns 100mA, NPN VCEO 800V NTE2533	PDF
NTE387MP Abstract: NTE387 Text: NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V	Original	NTE387 NTE387MP NTE387	PDF
FM2G200US60 Abstract: No abstract text available Text: FM2G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power	Original	FM2G200US60 E209204 FM2G200US60	PDF
induction cooker schematic diagram Abstract: schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W Text: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode TO3PBL Type Package Features: D High Reliability D High Collector−Base Breakdown Voltage D On−Chip Damper Diode Applications: D High−Voltage, High−Power Switching	Original	NTE2558 100mA induction cooker schematic diagram schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF

TRANSISTOR 250W Search Results

TRANSISTOR 250W Result Highlights (5)

TRANSISTOR 250W Datasheets Context Search

Gan on silicon

Untitled

MAGX-001214-250L00

Untitled

2sb504

2N2222A 338

y51 h 120c

NTE352

Untitled

to63

NPN Transistor 50A 400V

Untitled

HVV1214-250L

Untitled

NPN 250W

2n6259

BUZ353

1000w inverter PURE SINE WAVE schematic diagram

250w smps

NPN VCEO 800V

NTE387MP

FM2G200US60

induction cooker schematic diagram

Transistor 2SA 2SB 2SC 2SD