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    TRANSISTOR 2490 Search Results

    TRANSISTOR 2490 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2490 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.


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    PDF BLC8G27LS-100AV

    R07DS0753EJ0100

    Abstract: No abstract text available
    Text: PreliminaryData Sheet PA2821T1L R07DS0753EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.


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    PDF PA2821T1L R07DS0753EJ0100 PA2821T1L PA2821T1L-E1-AT PA2821T1L-E2-AT

    BLW96

    Abstract: No abstract text available
    Text: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


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    PDF BLW96 OT121B BLW96

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


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    PDF AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222

    AZ10EL89

    Abstract: AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89
    Text: ARIZONA MICROTEK, INC. AZ10EL89 ECL/PECL Coaxial Cable Driver FEATURES • • • • • • 375ps Propagation Delay 1.6V Output Swing Internal Input Pulldown Resistors Operating Range of 4.2V to 5.7V Direct Replacement for ON Semiconductor MC10EL89 Transistor Count = 29 devices


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    PDF AZ10EL89 375ps MC10EL89 AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 AZM10EL89 AZ10EL89 AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89

    BLV59

    Abstract: No abstract text available
    Text: , Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear power transistor BLV59 PINNING-SOT171A FEATURES « Internal input matching to achieve an optimum wideband capability and high power gain


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    PDF BLV59 PINNING-SOT171A OT171A BLV59

    Untitled

    Abstract: No abstract text available
    Text: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


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    PDF BSC024N025S 24N025S

    Untitled

    Abstract: No abstract text available
    Text: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


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    PDF BSC024N025S 24N025S

    BSC024N025S

    Abstract: JESD22
    Text: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


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    PDF BSC024N025S 24N025S JESD22

    BSC024N025S

    Abstract: JESD22 PG-TDSON-8
    Text: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


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    PDF BSC024N025S 24N025S 100gerous JESD22 PG-TDSON-8

    24N025S

    Abstract: BSC024N025S IEC61249-2-21 JESD22
    Text: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


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    PDF BSC024N025S IEC61249-2-21 24N025S 24N025S IEC61249-2-21 JESD22

    Untitled

    Abstract: No abstract text available
    Text: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications


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    PDF BSC024N025S 24N025S

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    MM706

    Abstract: 40ZA
    Text: MOTOROLA SC XSTRS/R 4bE F D b3b?2S4 OOTMflSfl MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2 .5 W - 4 7 0 M H Z - 7 .5 V HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR N PN S IL IC O N . . . designed for 5.0 to 10 Volt U H F large-signal amplifier applications


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    PDF T-33-05 MM706 40ZA

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF646

    Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644
    Text: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed


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    PDF MRF750 05A-0Ã MRF752 MRF754 MRF627 MRF559 MRF581 MRF515 Motorola transistors MRF646 Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF846 MRF839 MRF644

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MARKING GT SOT323

    Abstract: z149 99 0437 12 05
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones.


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    PDF SC-70/SOT-323) MRF577T1 SC-7Q/SOT-323) Current068 IS22I MRF577T1 MARKING GT SOT323 z149 99 0437 12 05

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output and driver am plifier stages in the 100 to 500 MHz frequency range. Specified 28 Voll, 4 00 MHz C haracteristics —


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    PDF MRF329

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503