Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRF581 Search Results

    SF Impression Pixel

    MRF581 Price and Stock

    Microchip Technology Inc MRF581

    RF TRANS NPN 18V 5GHZ MICRO X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF581 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.30896
    		Buy Now

    Microchip Technology Inc MRF581A

    RF TRANS NPN 15V 5GHZ MICRO X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF581A Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.414
    • 10000 $1.414
    		Buy Now

    Microchip Technology Inc MRF581G

    RF TRANS NPN 18V 5GHZ MICRO X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF581G Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.90799
    • 10000 $0.90799
    		Buy Now

    Microchip Technology Inc MRF5812

    RF TRANS NPN 15V 5GHZ 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF5812 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.28957
    		Buy Now

    Microchip Technology Inc MRF5812M

    TRANS NPN 15V 200MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF5812M Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more MRF581 price and stock on Findchips.com

    MRF581 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF581 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF581 Advanced Semiconductor Transistor Original PDF
    MRF581 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF581 Motorola 200 mA Low-noise, High Frequency Transistor Original PDF
    MRF581 Motorola European Master Selection Guide 1986 Scan PDF
    MRF581 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF581 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF5811LT1 Motorola LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF
    MRF5812 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF5812 Advanced Semiconductor NPN SILICON RF MICROWAVE TRANSISTOR Original PDF
    MRF5812 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF5812 Motorola NPN Silicon RF Low Power Transistor Scan PDF
    MRF5812 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF5812G Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 15V 200MA SO8 Original PDF
    MRF5812GR1 Advanced Power Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812GR1 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812GR2 Advanced Power Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812GR2 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 15V 200MA 8-SOIC Original PDF
    MRF5812R1 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF5812R1 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF

    MRF581 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581

    MRF5812

    Abstract: mrf5812 equivalent *3004 SO8
    Text: MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE SO-8 DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package


    Original     		PDF MRF5812 MRF5812 mrf5812 equivalent *3004 SO8

    MRF5811

    Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1 MRF5811LT1/D MRF5811 MRF5811L TRANSISTOR SF 128 HP11590B HP11590

    MRF581A

    Abstract: vebo 25
    Text: MRF581A NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF581A is Designed for High current low Power Amplifier Applications up to 1.0 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold Metalization System


    Original     		PDF MRF581A MRF581A vebo 25

    transistor fb 31n

    Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
    Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


    Original     		PDF MRF581/D MRF581 MRF5812R1, MRF5812 MRF581 transistor fb 31n MRF5815 case 317-01 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812R1

    MRF581

    Abstract: No abstract text available
    Text: MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold Metalization System


    Original     		PDF MRF581 MRF581

    Untitled

    Abstract: No abstract text available
    Text: MRF581 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)15


    Original     		PDF MRF581

    Untitled

    Abstract: No abstract text available
    Text: MRF5812 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)15


    Original     		PDF MRF5812

    MRF5812

    Abstract: mrf5812 equivalent S-parameter 2N5179 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF5812, BFR91 BFR90 MRF545 MRF544 MSC1319 MRF5812 mrf5812 equivalent S-parameter 2N5179 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607

    MRF5811LT1

    Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1/D* MRF5811LT1 MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B

    MRF5812

    Abstract: No abstract text available
    Text: MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units


    Original     		PDF MRF5812, MRF545 MRF544 MRF5812

    MRF581

    Abstract: MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 MSC1318
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz


    Original     		PDF MRF581/MRF581A MRF581 MRF581A MSC1318 MRF581 MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9

    MRF581

    Abstract: No abstract text available
    Text: -^emi-Conducto'i {Ptoducti., Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS features . Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz


    Original     		PDF MRF581/MRF581A MRF581A MRF581 MRF581

    MRF581A

    Abstract: MRF581 vk200* FERROXCUBE
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz


    Original     		PDF MRF581/MRF581A MRF581 MRF581A MRF581/MRF581A MRF581A MRF581 vk200* FERROXCUBE

    S-parameter 2N5179

    Abstract: s-parameter 2N3866a s-parameter 2N4427 MRF5812GR1 s-parameter transistor 2N4427 MRF5812 s-parameter 2N2857 2n2857 common base amplifier MRF5812G 2N5179
    Text: MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF5812, MRF5812G, S-parameter 2N5179 s-parameter 2N3866a s-parameter 2N4427 MRF5812GR1 s-parameter transistor 2N4427 MRF5812 s-parameter 2N2857 2n2857 common base amplifier MRF5812G 2N5179

    jis z 0237

    Abstract: l 0734 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1/D MRF5811LT1, 2PHX34607Q jis z 0237 l 0734 HP11590B

    MRF5811

    Abstract: ADC IC 0808
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1 MRF5811LT1 MRF5811 ADC IC 0808

    MRF580

    Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
    Text: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.


    OCR Scan     		PDF MRF580 MRF581 MRFC581 MRF580A, MRF581A, MRFC581A ic tms 1000 MRF580A A581 2771 17t Motorola 581

    MRF581

    Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF581 MRF581A VK-200, 56-590-65/3B MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead

    microlab fc 730

    Abstract: 5812 MOTOROLA motorola MRF5812 MRF581 MRF5812 mrf5812 equivalent MRF 434 mhz MRF 482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1,R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion • High Gain lc = 200 mA


    OCR Scan     		PDF MRF5812 MRF581 MRF5812R1 MRF581 MRF5812 K-200, 56-590-65/3B microlab fc 730 5812 MOTOROLA motorola MRF5812 mrf5812 equivalent MRF 434 mhz MRF 482

    RF5812

    Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
    Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


    OCR Scan     		PDF MRF581/D MRF5812 MRF581 MRF5812R1, MRF5812 RF5812 motorola MRF5812 mrf5812 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) MRF5811LT1

    MRF580A

    Abstract: MRFC581A MRFC581 MRF580 MRF581A F581A
    Text: MOTOROLA SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA T h e RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed fo r high cu rre n t lo w pow e r a m p lifie rs up to 1.0 GHz • L ow N oise 2 dB (•> Iq = 200 mA 500 MHz LOW NOISE


    OCR Scan     		PDF MRF580 MRF581 MRFC581 RFCS81 MRF580A, MRF581A, MRFC581A MRF580A MRFC581A MRF581A F581A

    TE 2549 MOTOROLA

    Abstract: MRF581A motorola MRF5812 RF581 MRF581
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •


    OCR Scan     		PDF MRF5812 MRF581 MRF581A MRF5812, TE 2549 MOTOROLA motorola MRF5812 RF581