transistor d412
Abstract: No abstract text available
Text: XL-25 with Li-98 Ceramic Heat Spreader with Thermal Tape XL-25 Features Large contact area Low weight High breakdown voltage Excellent heat spreader Custom shapes possible Applications LED / Notebook PC / M/B / Power Transistor / Power Module / CPU / Chip IC
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XL-25
Li-98
Li98C
20x20xt2
XL-25
transistor d412
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Untitled
Abstract: No abstract text available
Text: XL-25 Ceramic Heat Spreader Features Large contact area Low weight High breakdown voltage Excellent heat spreader Custom shapes possible Applications LED / Notebook PC / M/B / Power Transistor / Power Module / CPU / Chip IC Standard sizes mm 1. 2. 3. 4.
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XL-25
EN101-1992
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transistor 2062
Abstract: ZXTC2062E6
Text: A Product Line of Diodes Incorporated ZXTC2062E6 ADVANCE INFORMATION 20V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • NPN + PNP combination BVCEO > 20 -20 V • Case: SOT26 • Case Material: molded plastic, “Green” molding compound
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ZXTC2062E6
AEC-Q101
J-STD-020
MIL-STD-202,
DS33647
transistor 2062
ZXTC2062E6
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Untitled
Abstract: No abstract text available
Text: XL-25 Ceramic Heat Spreader Features Large contact area Low weight High breakdown voltage Excellent heat spreader Custom shapes possible Applications LED / Notebook PC / M/B / Power Transistor / Power Module / CPU / Chip IC Standard sizes mm 1. 2. 3. 4.
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XL-25
EN101-1992
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3PN0603
Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V
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IPI100N06S3-03
IPP100N06S3-03
IPB100N06S3-03
IPP100N06S3-03
3PN0603
BIPP100N06S3-03,
3PN0603
INFINEON smd PART MARKING
ANPS071E
BIPP100N06S3-03
IPB100N06S3-03
IPI100N06S3-03
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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transistor 2061
Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Text: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59
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711Dfl5b
0D7GQ24
2PD602;
2PD602A
2PB710
2PB710A
2PD602Q:
2PD602R:
2PD602S:
2PD602AQ:
transistor 2061
2PD602S
2PD602
2PD602A
2PD602AQ
2PD602AR
2PD602Q
2PD602R
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MC2124
Abstract: MC2150
Text: mm dd INTEGRATED CIRCUITS FROM MOTOROLA 1 ! I DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50
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MC2000
MC2100
MC2124
MC2150
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fzh 141
Abstract: FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2100 MC2002
Text: ged dd INTEGRATED CIRCUITS FROM MOTOROLA l ! l l DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50
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MC2000
MC2100
MC2028/MC2078
MC2128/MC2178
fzh 141
FZH 131
fzh 105
fzh 115
FZH 105 A
MC2003
FZH 121
MC2073
MC2002
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Untitled
Abstract: No abstract text available
Text: bbS3T31 OQEbOSfi 161 H A P X Philips Semiconductors NPN general purpose transistor 2PD602; 2PD602A N AUER PHILIPS/DISCRETE FEATURES Objective specification b?E J> PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION
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bbS3T31
2PD602;
2PD602A
2PB710
2PB710A
2PD602Q:
2PD602R:
2PD602S:
2PD602AQ:
2PD602
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP E2E a0ükñ23 □ 7TT707la D T-3H1 2SC3771 # N PN Epitaxial Planar Silicon Transistor 2018A U/V OSC, M IX, High-Frequency General-Purpose Amp Applications 1944B Applications . UHF/VHF frequency converters, looal oscillators, HF amplifiers
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7TT707la
2SC3771
1944B
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Untitled
Abstract: No abstract text available
Text: . SANYO SEMICONDUCTOR CORP EEE D • 7^ 1707^ 2SD1628 0007241= 4 T - 3 5 -15 % 2038 N P N Epitaxial Planar Silicon Transistor High-Current Switching Applications 731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor
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2SD1628
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transistor 21Y
Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements
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/331A
MIL-S-19500/
2N1553A
2N1556A
2N1554A
2N1555A
2N1556A
transistor 21Y
2N1556
TRANSISTOR 3052
2N1555
J717
2N1553
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2PB710
Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Text: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-
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711DflEb
007Q021J
2PD602;
2PD602A
2PB710
2PB710A
VSA314
2PD602Q:
2PD602R:
2PD602S:
2PD602
2PD602A
2PD602AQ
2PD602Q
2PD602R
2PD602S
SC59
transistor 2061
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation
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i707b
2SC4401
2SC4401-applied
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transistor 2038
Abstract: 2SA1729 S60S6
Text: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage
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2SA1729
-T-37-/Ã
250mm2
transistor 2038
2SA1729
S60S6
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2SC4003
Abstract: bau 95
Text: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity
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7cH707b
2SC4003
2SC4003
bau 95
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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Untitled
Abstract: No abstract text available
Text: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S I •F e a tu re s 1 ) Darlington connection for a high Fif e . (Min. 5000 atVcE/lc~3V/0.1A) 2 ) High input impedance. •A b s o lu te maximum ratings (Ta—2 5 t )
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2SD2142K
2SC2062S
2SD2470
2SD2142K
2062S
0Dlb713
O-220FN
O-220FN
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .
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i707L
T-31-n
2SC377
1947B
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358 IC
Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
Text: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product
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2SC4453
2SC4453-applied
358 IC
transistor 359 AJ
S2E MARKING
2S12
transistor npn d 2058
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