Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2.4GHZ CLASS AB AMPLIFIER SCHEMATIC Search Results

    TRANSISTOR 2.4GHZ CLASS AB AMPLIFIER SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2.4GHZ CLASS AB AMPLIFIER SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g a336-678-5570 EDS-104641

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g LL1608FH4N7J DS110620 LL1608FH10J SZM2066ZSQ SZM2066ZSR

    vpc3 c

    Abstract: TRANSISTOR MARKING CODE R2A SZM-2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J DS110620 vpc3 c TRANSISTOR MARKING CODE R2A

    SZM-2066Z

    Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g 60052R4CW250 600S100JW250 0805HQ 12XJBB LL1608FH4N7J LL1608FH10J transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z

    SZM-2066Z

    Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 transistor 2.4GHz amplifier schematic
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2 W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g LL1608FH10J SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EVB3 DS100622 transistor 2.4GHz amplifier schematic wifi SZM-2066 transistor 2.4GHz amplifier schematic

    Untitled

    Abstract: No abstract text available
    Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems


    Original     		PDF ECP203 QFN-16 ECP203 ECP203G ECP203G-500 ECP203G-1000 ECP203D ECP203D-500 ECP203D-1000 QFN-16

    16l soic8

    Abstract: qfn16 thermal resistance
    Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


    Original     		PDF ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance

    SZA2044ZPCK-EVB2

    Abstract: SZA-2044 SZA2044 SZA-2044Z transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5 V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 11b/g SZA2044 SZA2044ZPCK-EVB2 DS100266 SZA2044ZPCK-EVB2 SZA-2044Z transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic

    SZA-2044

    Abstract: SZA-2044Z
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 11b/g EDS-103612 SZA-2044Z

    SZA2044

    Abstract: SZA-2044 transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic dbm
    Text: Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.


    Original     		PDF SZA-2044 11b/g SZA2044 EDS-103612 SZA-2044 SZA-2044" SZA2044 transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic dbm

    8002 amplifier

    Abstract: SZA2044 SZA-2044 transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic dbm EDS-103612 t40c marking
    Text: Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.


    Original     		PDF SZA-2044 11b/g SZA2044 EDS-103612 SZA-2044 SZA-2044" 8002 amplifier SZA2044 transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic dbm t40c marking

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.


    Original     		PDF SZA-2044 11b/g 10mil SZA2044 EDS-103612 SZA-2044" SZA2044

    transistor 2.4GHz amplifier schematic wifi

    Abstract: schematic wifi board
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 11b/g DS110620 SZA2044ZSQ SZA2044ZSR SZA2044Z SZA2044ZPCK-EVB2 transistor 2.4GHz amplifier schematic wifi schematic wifi board

    Untitled

    Abstract: No abstract text available
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor


    Original     		PDF SZA-2044 11b/g EDS-103612

    SZA-2044

    Abstract: SZA-2044Z transistor 2.4GHz amplifier schematic SZA2044
    Text: Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16


    Original     		PDF SZA-2044 11b/g SZA-2044 SZA-2044Z SZA-2044" SZA-2044Z" SZA2044 SZA-2044Z EDS-103612 transistor 2.4GHz amplifier schematic SZA2044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.


    Original     		PDF SZA-2044 11b/g 10mil SZA2044 EDS-103612 SZA-2044" SZA2044

    transistor 2.4GHz amplifier schematic wifi

    Abstract: land pattern for 0402 cap
    Text: SZA-2044 Z SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier 700MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB heterojunction bipolar transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 700MHz 11b/g DS121211 SZA2044ZSQ SZA2044ZSR transistor 2.4GHz amplifier schematic wifi land pattern for 0402 cap

    SZA-2044Z

    Abstract: SZA2044 SZA-2044
    Text: Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16


    Original     		PDF SZA-2044 11b/g SZA-2044" SZA-2044Z" SZA-2044 SZA-2044Z SZA-2044Z EDS-103612 SZA2044

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP Amplifier SZP-2026Z Preliminary 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z-EVB1 SZP-2026Z-EVB2 EDS-104611

    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250

    600S100JW250

    Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
    Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 600S100JW250 cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP


    Original     		PDF SZP-2026Z EDS-104611 SZP-2026Z" SZP-2026Z*

    300 watts amplifier schematics

    Abstract: MCH185C102KK power amplifier 500 watt transistor circuit
    Text: ECP103 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters Multi-carrier systems 2.1-2.7GHz 30.5 dBm P1dB High Linearity: 46 dBm OIP3 High Efficiency: PAE > 40% 11 dB Linear Gain Single 5V Supply High Reliabilty


    Original     		PDF ECP103 QFN-16 ECP103 ECP103G ECP103G-500 ECP103G-1000 ECP103D ECP103D-500 ECP103D-1000 QFN-16 300 watts amplifier schematics MCH185C102KK power amplifier 500 watt transistor circuit

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		PDF SZP-2026Z EDS-104611 SZP-2026Z" SZP-2026Z*