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    TRANSISTOR 1800MHZ Search Results

    TRANSISTOR 1800MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1800MHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rf transistors amplifier design and matching network

    Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
    Text: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design


    Original     		ISL73096RH, ISL73127RH, ISL73128RH ISL73096RH ISL73096RH/ISL73127RH/ 800MHz 2500MHz) 10MHz 600MHz rf transistors amplifier design and matching network silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH 6 "transistor arrays" ic PDF

    Q545

    Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128 PDF

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 SOI series shunt PDF

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
    Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		AN9315 HFA3046, HFA3096, HFA3127, HFA3128 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096 PDF

    j525 transistor

    Abstract: BPT18E02 J525 TRANSISTOR 2n2904 2N2904 transistor j525
    Text: BIPOLARICS, INC. Part Number BPT18E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 2 Watts @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 400 mA t Bipolarics' BPT18E02 is a high performance silicon bipolar transistor


    Original     		BPT18E02 BPT18E02 2N2904 200pF 1800MHz j525 transistor J525 TRANSISTOR 2n2904 2N2904 transistor j525 PDF

    Transistor W03

    Abstract: AN1352 START420
    Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, NF = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		AN1352 START420 23dBm, SC-70 OT-343) 30mils Transistor W03 AN1352 PDF

    Transistor W03

    Abstract: 1800mhz rf frequency power amplifier circuit AN1352 START420 w03 TRANSISTOR
    Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, NF = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		AN1352 START420 23dBm, SC-70 OT-343) 30mils Transistor W03 1800mhz rf frequency power amplifier circuit AN1352 w03 TRANSISTOR PDF

    Transistor W03

    Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
    Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor PDF

    "RF Connector"

    Abstract: SCT2000 1800mhz rf frequency power amplifier circuit AN1352 START420 amplifier rf 18dbm gain 18db 60OHM w03 TRANSISTOR
    Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, N F = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		AN1352 START420 23dBm, SC-70 OT-343) 30mils "RF Connector" SCT2000 1800mhz rf frequency power amplifier circuit AN1352 amplifier rf 18dbm gain 18db 60OHM w03 TRANSISTOR PDF

    AN1352

    Abstract: START420 Transistor W03
    Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, N F = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		AN1352 START420 23dBm, SC-70 OT-343) 30mils AN1352 Transistor W03 PDF

    SG911A

    Abstract: TO-129 c 129 transistor
    Text: GAE GREAT AMERICAN ELECTROINCS SG911A Silicon NPN power UHF transistor SG911A is designed for amplifier, frequency multipliers, and auto-oscillators applications in the 1000-1800Mhz frequency range. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration


    OCR Scan     		SG911A SG911A 1000-1800Mhz O-129 TO-129 c 129 transistor PDF

    "Frequency Multipliers"

    Abstract: SG911B TO-129 SG911
    Text: GAE GREAT AMERICAN ELECTROINCS SG911B Silicon NPN power UHF transistor SG911B is designed for amplifier, frequency multipliers, and auto-oscillators applications in the 1000-1800Mhz frequency range. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration


    OCR Scan     		SG911B SG911B 1000-1800Mhz O-129 0D0004M "Frequency Multipliers" TO-129 SG911 PDF

    SMD Transistor Y34

    Abstract: Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34
    Text: Transistors IC SMD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High speed,high voltage switching. High ft:fT=1800MHz TYP. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01


    Original     		2SA1462 OT-23 1800MHz -10mA SMD Transistor Y34 Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34 PDF

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567 PDF

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series PDF

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz PDF

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot PDF

    Infineon code date marking format

    Abstract: BFP460 infineon AN077 AN077 BGA420 Infineon DEVICES marking format
    Text: BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point


    Original     		BFP460 OT343 Infineon code date marking format BFP460 infineon AN077 AN077 BGA420 Infineon DEVICES marking format PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


    Original     		NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3 PDF

    fpd2000as

    Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		FPD2000AS FPD2000AS 33dBm 46dBm 85GHz) EB2000AS-AA 14GHz) EB2000AS-AD EB2000AS-AG FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise PDF

    nptb00004

    Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
    Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


    Original     		NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 PDF