TRANSISTOR 160V 1.5A PNP Search Results

TRANSISTOR 160V 1.5A PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

TRANSISTOR 160V 1.5A PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D1918 Abstract: No abstract text available Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V	Original	2SD1918 SC-63) OT-428> 2SB1275 D1918 R1102A D1918	PDF
B1275 Abstract: No abstract text available Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V	Original	2SB1275 -160V -160V SC-63) OT-428> 2SD1918 B1275 B1275	PDF
2SC1502 Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity	Original	EN2101E 2SA1507/2SC3902 2SA1507 2SC1502 a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp	PDF
Untitled Abstract: No abstract text available Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity	Original	2SA1507/2SC3902 EN2101E 2SA1507	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMDType DIP Type PNP Silicon Transistor 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -180 V	Original	2SB649A -160V -55to -10mA, -600mA -50mA -150mA -500mA 150mA	PDF
transistor 160v 1.5a pnp Abstract: 2SD669 2SB649A 2SD669A Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649A DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-160V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669A	Original	2SB649A -160V 2SD669A -10mA -500mA; -50mA -150mA -160V; -500mA transistor 160v 1.5a pnp 2SD669 2SB649A 2SD669A	PDF
c4027 Abstract: No abstract text available Text: Ordering number : EN2262F 2SA1552/2SC4027 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Converters, inverters, color TV audio output Features • • • High voltage and large current capacity	Original	EN2262F 2SA1552/2SC4027 2SA1552 2SC4027-applied 2SA1552 c4027	PDF
2sc3902 Abstract: 2sa1507 EN2101E Text: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process	Original	EN2101E 2SA1507/2SC3902 O-126ML 2SA1507 180where 2sc3902 2sa1507 EN2101E	PDF
C4614 Abstract: No abstract text available Text: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C	Original	EN3578A 2SA1770/2SC4614 2SA1770 C4614	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	Original	EN2007C 2SA1419/2SC3649 2SA1419 250mm2	PDF
2SA2005 Abstract: 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20 Text: 2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SC5511 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.	Original	2SC5511 O-220FN 150MHz, 100MHz) 2SA2005 2SA2005 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20	PDF
2SA20 Abstract: 2SA2005 velosity Text: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) ÌÑóîîðÚÒ ìòë ïðòð íòî Features 1) Electrical characteristics of DC current gain hFE is flat.	Original	2SA2005 150MHz, 100MHz) 2SA20 2SA2005 velosity	PDF
transistor 649A Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：A117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2	Original	100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A	PDF
2Sd649A Abstract: 0038a 2sb649a Text: PJB649A PNP Epitaxial Silicon Transistor • • Complementary pair with PJD669A *Value at Tc $ 25°C TO-126 ABSOLUTE M AXIM U M RATINGS TA = 25 °C Item Symbol 2SB649A Unit Collector to base voltage V CBO -180 V Collector to emitter voltage V CEO -160 V	OCR Scan	PJB649A PJD669A O-126 2SB649A 2SD649A 0038a	PDF

transistor 160v 1.5a pnp Abstract: ha1011 Text: PNP S I L I C O N TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HA1011 █ APPLICATIONS High Voltage switching，AF Power Amp. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃	Original	HA1011 O-220 -180V -160V -300mA -500mA, -50mA transistor 160v 1.5a pnp ha1011	PDF
2SB669 Abstract: 2SB669A 2SB649AL 2SB649 2sb649a Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 *Pb-free plating product number:2SB649/AL ORDERING INFORMATION	Original	2SB649/A 2SB669/A O-126 2SB649/AL 2SB649-x-T60-A-K 2SB649L-x-T60-A-K 2SB649A-x-T60-A-K 2SB649AL-x-T60-A-K O-126 2SB669 2SB669A 2SB649AL 2SB649 2sb649a	PDF
2sa2005 Abstract: 2SC5511 transistor 160v 1.5a pnp velosity Text: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation −160V, −1.5A 2SA2005 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.	Original	2SA2005 -160V, O-220FN -160V 150MHz, 100MHz) 2SC5511 2sa2005 2SC5511 transistor 160v 1.5a pnp velosity	PDF
2SB669 Abstract: 2SB649AL 2SB669A 2SB649 2SB649A 126-C Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL	Original	2SB649/A OT-89 2SB669/A O-126 O-126C 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB669 2SB649AL 2SB669A 2SB649 2SB649A 126-C	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL	Original	2SB649/A OT-89 2SB669/A O-126 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B	PDF
transistor 2sb649 Abstract: transistor 160v 1.5a pnp 2SB649 2SD669 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669	Original	2SB649 -120V 2SD669 -10mA -500mA; -50mA -150mA -160V; -500mA transistor 2sb649 transistor 160v 1.5a pnp 2SB649 2SD669	PDF
transistor H 649A Abstract: No abstract text available Text: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO	Original	WTM649A OT-89 WTM649A -160V, 01-Aug-05 OT-89 500TYP transistor H 649A	PDF
transistor 649A Abstract: 101B WTM649A Text: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO	Original	WTM649A OT-89 WTM649A -160V, 01-Aug-05 OT-89 500TYP transistor 649A 101B	PDF
transistor 669A Abstract: h 669A wtc66 101B 669a transistor 160v 1.5a pnp Text: WTM669A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO	Original	WTM669A OT-89 WTM669A -160V, 01-Aug-05 WTM649A OT-89 500TYP transistor 669A h 669A wtc66 101B 669a transistor 160v 1.5a pnp	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF

TRANSISTOR 160V 1.5A PNP Search Results

TRANSISTOR 160V 1.5A PNP Result Highlights (5)

TRANSISTOR 160V 1.5A PNP Datasheets Context Search

D1918

B1275

2SC1502

Untitled

Untitled

transistor 160v 1.5a pnp

c4027

2sc3902

C4614

Untitled

2SA2005

2SA20

transistor 649A

2Sd649A

transistor 160v 1.5a pnp

2SB669

2sa2005

2SB669

Untitled

transistor 2sb649

transistor H 649A

transistor 649A

transistor 669A

IRF9210