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    2SD669 Search Results

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    2SD669 Price and Stock

    Micro Commercial Components 2SD669-D-BP

    TRANS NPN 120V 1.5A TO126
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    Micro Commercial Components 2SD669-B-BP

    TRANS NPN 120V 1.5A TO126
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    Micro Commercial Components 2SD669-C-BP

    TRANS NPN 120V 1.5A TO126
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    Micro Commercial Components 2SD669A-B-BP

    TRANS NPN 160V 1.5A TO126
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    Micro Commercial Components 2SD669A-C-BP

    TRANS NPN 160V 1.5A TO126
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    2SD669 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD669 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SD669 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SD669 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SD669 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SD669 Weitron NPN Epitaxial Planar Transistors Original PDF
    2SD669 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD669 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD669 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD669 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD669 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD669 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD669 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD669 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD669 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD669 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD669 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD669 Unknown Cross Reference Datasheet Scan PDF
    2SD669A Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SD669A Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SD669A Renesas Technology Silicon NPN Epitaxial Original PDF

    2SD669 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sd669

    Abstract: 2SD669AL
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 TO-126 1 TO-251 *Pb-free plating product number: 2SD669/AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD669-x-T60-A-K 2SD669L-x-T60-A-K


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    2SD669/A O-126 O-251 2SD669/AL 2SD669-x-T60-A-K 2SD669L-x-T60-A-K 2SD669A-x-T60-A-K 2SD669AL-x-T60-A-K 2SD669-x-TM3-A-T 2SD669L-x-TM3-A-T 2sd669 2SD669AL PDF

    QW-R204-005

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    2SD669/A 2SB649/A O-126 2SD669 2SD669A QW-R204-005 PDF

    2SB649

    Abstract: 669a 2SB649A
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity


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    2SB649 2SB649A O-126 2SD669/669A -120/-160V 2SB649 -160V; 669a 2SB649A PDF

    2SD669

    Abstract: 2SD669A ALL 2SD669A DSA003644
    Text: 2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C)


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    2SD669, 2SD669A ADE-208-899 2SB649/A O-126 2SD669 2SD669 2SD669A ALL 2SD669A DSA003644 PDF

    transistor 2sb649

    Abstract: transistor 160v 1.5a pnp 2SB649 2SD669
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669


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    2SB649 -120V 2SD669 -10mA -500mA; -50mA -150mA -160V; -500mA transistor 2sb649 transistor 160v 1.5a pnp 2SB649 2SD669 PDF

    transistor 649A

    Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126 PDF

    2SD669A

    Abstract: 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-126 2SD669 2SD669A O-126 2SB649/A 150mA 2SD669A 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123 PDF

    transistor 649A

    Abstract: 2SB649 2SB649A 649a
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 2SB649 2SB649A 649a PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    2SD669/A 2SB649/A O-126C 2SD669 2SD669A 600mA, 150mA QW-R217-001 PDF

    VCEO160V

    Abstract: HS669A 14014B 2SD669A transistor 160v 1.5a npn
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD669A HS669A █ 主要用途 █ 外形图及引脚排列 作低频功率放大。 █ 极限值(Ta=25℃) TO-126 T stg ——贮存温度………………………………… -55~150℃


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    2SD669A HS669A O-126 10mAREB= 150mA 500mA 500mA, VCEO160V HS669A 14014B 2SD669A transistor 160v 1.5a npn PDF

    2SD669A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669A TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range


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    O-126C 2SD669A O-126C 150mA 500mA 500mA, 2SD669A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-126 2SD669 2SD669A O-126 2SB649/A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-126C 2SD669 2SD669A O-126C 2SB649/A 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD669/A NPN SILICON TRANSISTOR BI POLAR POWER GEN ERAL PU RPOSE T RAN SI ST OR ̈ APPLI CAT I ON S * Low frequency power amplifier complementary pair with UTC 2SB649/A ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free


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    2SD669/A 2SB649/A 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R 2SD669xL-x-AB3-R 2SD669xG-x-AB3-R 2SD669xL-x-T60-K 2SD669xG-x-T60-K 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251


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    2SD669/A OT-89 OT-223 2SB649/A O-92NL O-126 O-126C O-251 O-252 2SD669L/2SD669AL PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    2SD669/A 2SB649/A O-126 2SD669 2SD669A 600mA, 150mA QW-R204-005 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    2SD669/A 2SB649/A 2SD669 2SD669A QW-R201-049 150mA 2SD669) 2SD669A) PDF

    2SD669

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    2SD669/A 2SB649/A O-126C 2SD669 2SD669A QW-R217-001 PDF

    2sd669

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SD669 A 2SD669(A)-B 2SD669(A)-C 2SD669-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates


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    2SD669 2SD669-D -55OC PDF

    2sd649

    Abstract: transistor 649A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA 2sd649 transistor 649A PDF

    2SD669A

    Abstract: 2SD669
    Text: 2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol 2SD669 2SD669A Unit Collector-Emitter Voltage VCBO 180 180 V Collector-Base Voltage VCEO 120 160


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    2SD669/2SD669A O-126C 2SD669 2SD669A 18-Oct-05 O-126C 2SD669A 2SD669 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649 2SB649A


    OCR Scan
    2B649 2SB649A 2SD669/A 2B649, 2SB649 PDF

    2SB694H

    Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
    Text: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669


    OCR Scan
    2SD661 2SD661A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2-31A1A) 2SD695 2SB694H 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD706 PDF