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    TR 2N3904 Price and Stock

    Central Semiconductor Corp 2N3904 TRE TIN/LEAD

    Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N3904 TRE TIN/LEAD
    • 1 $0.48
    • 10 $0.366
    • 100 $0.228
    • 1000 $0.12
    • 10000 $0.092
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    Microchip Technology Inc 2N3904UB/TR

    Bipolar Transistors - BJT Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N3904UB/TR
    • 1 -
    • 10 -
    • 100 $51.85
    • 1000 $51.85
    • 10000 $51.85
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    Central Semiconductor Corp 2N3904 TRE PBFREE

    Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N3904 TRE PBFREE
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.072
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    TR 2N3904 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3000 watts subwoofer circuit diagram

    Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION


    Original     		PDF TK2150 TC2001/TP2150 3000 watts subwoofer circuit diagram 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"

    500w car audio amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary


    Original     		PDF RB-TA3020-1, RB-TA3020-2, RB-TA3020-3 RB-TA3020 TA3020 RB-TA3020, MURS120T3 STW34NB20 TA3020 500w car audio amplifier circuit diagram 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram

    CIP-8E

    Abstract: RWS-434 TWS-434 TWS-434A RWS 434 RF receiver CIP-8D 4 bit encoder CIP 8D Decoder RWS-434 RF Receiver HT12D decoder
    Text: TWS-434 / RWS-434 http://www.rentron.com Module size W = 0.426” H = 0.6” lead spacing 0.1” Symbol Parameter Vcc Supply Voltage Ip Peak Current Vh Vl Fo Tr / Tf Po Dr Condition Min Typ Max Unit 2.0 - 12.0 V 2V / 12V - 1.64 / 19.4 - mA Input High Voltage


    Original     		PDF TWS-434 RWS-434 100uA 1N4148 2N4403 CIP-8E RWS-434 TWS-434A RWS 434 RF receiver CIP-8D 4 bit encoder CIP 8D Decoder RWS-434 RF Receiver HT12D decoder

    SCHEMATIC 1000w power amplifier stereo

    Abstract: simple subwoofer 2.1 high pass filter schematic 3000 watts subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier 5 channels 1000w audio amplifier circuit diagram 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.2 –December 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier


    Original     		PDF TK2350 TC2001/TP2350 TK2150 TK2350, SCHEMATIC 1000w power amplifier stereo simple subwoofer 2.1 high pass filter schematic 3000 watts subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier 5 channels 1000w audio amplifier circuit diagram 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram

    1000w subwoofer amplifier

    Abstract: tp2350 SCHEMATIC 1000w power amplifier stereo EB-TK2350 5.1 speaker with subwoofer circuit diagram 1000w RB-TK2350 TRIPATH TA3020 1000w subwoofer amplifier PCB layout 500 watt subwoofer VN10
    Text: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.0 – May 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier


    Original     		PDF TK2350 TC2001/TP2350 TK2150 TK2350, 1000w subwoofer amplifier tp2350 SCHEMATIC 1000w power amplifier stereo EB-TK2350 5.1 speaker with subwoofer circuit diagram 1000w RB-TK2350 TRIPATH TA3020 1000w subwoofer amplifier PCB layout 500 watt subwoofer VN10

    1000w subwoofer amplifier

    Abstract: TA3020 1500 watts subwoofer amplifier circuit diagram 300w audio amplifier ta 3020 tripath 3020 TRIPATH TA3020 subwoofer 300 watts amplifier Tripath Amplifier SCHEMATIC 1000w power amplifier stereo TRIPATH TECHNOLOGY TA3020
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA3020 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY Technical Information Revision 2.0 – November 2001 GENERAL DESCRIPTION The TA3020 is a two-channel, 300W (4Ω) per channel Amplifier Driver IC that uses Tripath’s


    Original     		PDF TA3020 TA3020 EAD008 1000w subwoofer amplifier 1500 watts subwoofer amplifier circuit diagram 300w audio amplifier ta 3020 tripath 3020 TRIPATH TA3020 subwoofer 300 watts amplifier Tripath Amplifier SCHEMATIC 1000w power amplifier stereo TRIPATH TECHNOLOGY TA3020

    Untitled

    Abstract: No abstract text available
    Text: This I tr Material Ln O NPN General Purpose Amplifiers and Switches b -J t-> LU Copyrighted a a a Device No. TN2219A •c a Case Style V CBO V TO-226 99 CEO ^EBO (V) Min (V) Min (V) Min 75 40 6 'cBO V (nA)@ “ Max 10 60 -r tr JT By J3 2N3903 TO-92 (92)


    OCR Scan     		PDF bS01130 004GMbM

    2N3904

    Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
    Text: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF 2N39Q4 VCEOm40V 2N3904 2N3904 2N3904) 2N39D4 2N3304 pc 525 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3

    3906 pnp

    Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
    Text: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -


    OCR Scan     		PDF 2N3905 2N3906 2N3903 2N3904 T0-92A 200mA 350mW PA905 3906 pnp BOX69477 2N3906 MICRO ELECTRONICS E3040

    BCY58C

    Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
    Text: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C


    OCR Scan     		PDF BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BCY58C bc547b ferranti BCY59A bcy59b

    2N3903

    Abstract: No abstract text available
    Text: 2N3903 S / S TR ELECTRONICS GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: V c e o = 4 0 V Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2N3903 625mW 2N3904 30jus, GQ3Dfl00 2N3903

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2N3904

    Abstract: h 2n3904 mps2221 2n5401 2n3904
    Text: -3 1X1 X H CD D» CD ;0 CD N ro ui 70 H O -3 m \ o > OVERSEA STANDARD < Type No. NPN ! v CEO PNP •c V (mA) (mW) f jM IN . V CE (sat) MAX. hFE Pc VCE lC (V) (mA) >C ■b (V) (mA) (mA) (MHz) Cob Vce •c (V) (mA) SW Time M AX. VCB td tr tstg tf (PF).


    OCR Scan     		PDF 2N3903 2N3904 2N4123 2N4124 2N4400 2N4401 2N3905 2N3906 2N4125 2N4126 h 2n3904 mps2221 2n5401 2n3904

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    2N3904

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR GENERAL PURPOSE USE SWITCHING Af!D AMPLIFIER APPLICATIONS. MAX. FEATURES : . Low Leakage Current : ICEV= 50nA(Max.), Ijj£y=-50nA(Max.) <? VCE=30V, VBE=-3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF 2N3904 -50nA 2N3906 SC-43 2N3904

    lm 3904

    Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
    Text: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications


    OCR Scan     		PDF T3906/SST3906/M ST3906/RXT3906/PN UMT3904/SST3904/MMST3904/RXT3904/2N3904 T3904 ST3904 RXT3904 T3904, UMT3904 SST3904 MMST3904 lm 3904 2N3904 T 2n390 2N3904TA 2N3904

    2N3904C

    Abstract: 1N916 20MS 2N3906C
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x = 5 0 n A M a x . , lB L = 50n A (M ax.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.


    OCR Scan     		PDF 2N3904C 2N3906C. Vce-10V, 300ns 1N916? 300//S, 2N3904C 1N916 20MS 2N3906C

    common emitter amplifier 2N3904

    Abstract: 2N3904 2N3904 hfe 1N916 2N3906 2N3906 NPN Transistor
    Text: 4SE D • TCH7ES0 0017744 T « T 0 S 4 TOSHIBA TRANSISTOR 2N3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS ri>i -23. TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING Af!D AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Current : IcEV=50nA(Max.), Igky=-50nA(Max.)


    OCR Scan     		PDF 2N3906 2N3904 sc-43 common emitter amplifier 2N3904 2N3904 2N3904 hfe 1N916 2N3906 2N3906 NPN Transistor

    TRANSISTOR 2N3904

    Abstract: 2n3904 950 2n3904 specification k 151 transistor PNP switching transistor 2N3904 mhz
    Text: Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic


    OCR Scan     		PDF 2N3906. 2N3904 TRANSISTOR 2N3904 2n3904 950 2n3904 specification k 151 transistor PNP switching transistor 2N3904 mhz

    TRANSISTOR 2N3904

    Abstract: MAM279 Probe Oscilloscope 2n3904 philips 2n3904 specification NPN, Si, POWER TRANSISTOR, PLASTIC 2n3904 950 EB-500 2N3904 2N3906
    Text: Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic


    OCR Scan     		PDF 2N3904 2N3906. SC-43 TRANSISTOR 2N3904 MAM279 Probe Oscilloscope 2n3904 philips 2n3904 specification NPN, Si, POWER TRANSISTOR, PLASTIC 2n3904 950 EB-500 2N3904 2N3906

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies I S 3 Iin^* ' |wJ 11 F ti S — .•!■-/ ‘y iC D N O y O T 'D R 2N3904 C * >\ MMBT3904 TO-92 SOT-23 BE Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.


    OCR Scan     		PDF 2N3904 MMBT3904 OT-23 MMPQ3904 PZT3904 OT-223 SOIC-16 2N3904 MMBT3904 MMPQ3904

    2N3904U

    Abstract: 1N916 2N3906U
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(M ax.) DIM Veb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage


    OCR Scan     		PDF 2N3904U 2N3906U. 2N3904U 1N916 2N3906U