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    TOSHIBA MG50 Search Results

    TOSHIBA MG50 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MG50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG50Q1BS11

    Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent
    Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50Q1BS11 2-33D2A MG50Q1BS11 TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent

    PC 181 OPTO

    Abstract: MG50N2YS1 16175 MU51
    Text: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm


    OCR Scan     		PDF ciGci72S0 DDlbl74 MG50N2YS1 EGA-MG50N2YS1-4 DT-33 MG50N2YS1 EGA-MG50N2YS1- PC 181 OPTO 16175 MU51

    Toshiba transistor NPN Ic 50A

    Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35&#39; TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF 001L33S Dr-33-35" MG50N2CK1 TJS1251C EGM-HC50N2CK1-4 Toshiba transistor NPN Ic 50A toshiba diode 1A TOSHIBA D MG50N2CK1 50n2

    MG50D2YM1

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG50D2YM1 085ii 31/C2) MG50D2YM1-4 MG50D2YM1-5 T1A20 MG50D2YM1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG50H1BS1 50HIBS1-A

    Untitled

    Abstract: No abstract text available
    Text: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm


    OCR Scan     		PDF D01ti070 DJ-33-3S MG50Q2YK1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA - C D I S C R E T E / O P T O J T D 9097250 TOSHIBA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR DE | ^D^TaSO DGlb4Sl S 90D 16421 TOSHIBA GTR MODULE .MG50D2DM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG50D2DM1 085il MG50D2DM1-4 DT7a50 HG50D2DM1-5

    mg50g2

    Abstract: 16441 MG50G2CH1 lt 7550
    Text: •Ì0 DE TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO ¿/oáhiha SEMICONDUCTOR 90D 0Dlt,4Ml a I 16441 D TOSHIBA GTR MODULE MG50G2CH1 TECHNICAL DATA SILICON N-CHANNEL MOS+NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG50G2CH1 mg50g2 16441 MG50G2CH1 lt 7550

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF DT-33-3^ MG50M2CK2 Dr-33-3S

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    MG50G2CL3

    Abstract: TF1204 MG50G2cl3 toshiba gtr driver 05il
    Text: TOSHIBA TF1204 TOSHIBA SOLID STATE GTR DRIVER MODULE TF1204 GTR DRIVER Unit in mm 9MAX. 30 MAX. TOSHIBA TF1204 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the , TYPE \ MARK optical isolator and GTR driver circuit.


    OCR Scan     		PDF TF1204 TF1204 2000VrmS 10-30D1A MG50G2CL3 MG50G2cl3 toshiba gtr driver 05il

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOï TO 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A D E OOlblïG 3 90D 16170 SEMICONDUCTOR TOSHIBA GTR MODULE MG50N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT H I G H POWER SWIT C H I N G APPLICATIONS. M O T O R CONTROL APPLICATIONS. FEATURES:


    OCR Scan     		PDF MG50N1BS1 EGA-MG50N1BS1â

    MG50G2DM1

    Abstract: S443 1251C 251C
    Text: TOSHIBA "Í0 -CDISCRETE/OPTQ} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR D ^ | 101725111 5 1 . 90D 16431 D7"-3f-ö?7 TOSHIBA GTR MODULE M G 5 0 G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF QDlb431_ MG50G2DM1 2-108B1A Ta-25Â di/4t-150A/ MC50G2DM1-4' D01b43S MG50G2DM1 MG50G2DH1-5 S443 1251C 251C

    MG50M2YK1

    Abstract: 17250 b1 10
    Text: TOSHIBA { D IS CR ET E/OPT O* _ TO 9 0 9 7 2 5 0 T O SH I BA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR cïDcT7ES0 D O l bD bb ñ 90D 16066 DT-\33«35I TOSHIBA GTR MODULE MG50M2YK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG50M2YK1 Z-94C1A mg50m2yk1 17250 b1 10

    2108A

    Abstract: S3051 741E MG50G2YM1 A90D
    Text: TOSHIBA {DIS CR ET E/OPT O} I 9097250 TOSHIBA <DI SCRETE/OPTO> TOSHIBA DE I TGTTSSG □□lb43b 4 f ~ _ 90D 16436 DT-3^-bn TO SEMICONDUCTOR TOSHIBA GTR MODULE M G 5 0 G 2 Y M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. 11DT0R CONTROL APPLICATIONS.


    OCR Scan     		PDF 11DT0R lb43b MG50G2YM1 MG50G2YM1-4 MG50G2VM1 MG50G2YM1-5 2108A S3051 741E A90D

    toshiba mg50q2ys50

    Abstract: MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y
    Text: TOSHIBA MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG50Q2YS50 2-94D4A toshiba mg50q2ys50 MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51A

    ksh 200 TRANSISTOR equivalent

    Abstract: MG50Q6ES51 G50Q6ES51
    Text: TOSHIBA MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51 G50Q6ES51 2-108E1A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51 G50Q6ES51

    MG50Q6ES50

    Abstract: P channel 600v 50a IGBT vqe 71
    Text: TOSHIBA MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50 2-108E1A 961001EAA1 10//s MG50Q6ES50 P channel 600v 50a IGBT vqe 71

    MG50Q6ES40

    Abstract: g50q6es40
    Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40 G50Q6ES40 2-94B1A 961001EAA2 MG50Q6ES40 g50q6es40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51 MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q1 ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.)


    OCR Scan     		PDF MG50Q1ZS50 MG50Q1 2-94D7A MG50Q1ZS50

    MG50G1BL2

    Abstract: mg50g1b mg50g1bl MG50G1
    Text: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,


    OCR Scan     		PDF MG50G1BL2 082L6 MG50G1BL2 mg50g1b mg50g1bl MG50G1

    MG50Q6ES50A

    Abstract: vqe 71
    Text: TOSHIBA MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50A 2-108E2A 961001EAA1 10//s MG50Q6ES50A vqe 71