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    50N2 Search Results

    50N2 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    HM2P95PNE150N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 Row vertical Press-Fit Header, Type DE with 120 Signal Pins and RoHS compatible Visit Amphenol Communications Solutions
    HM2P89PDK150N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 row vertical Header, Module Type F with 88 signal pins and RoHS compatabile Visit Amphenol Communications Solutions
    HM2P95PDG150N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 Row vertical Press-Fit Header, Type DE with 138 Signal Pins and RoHS compatable Visit Amphenol Communications Solutions
    HM2P71PDS250N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type B 19 with 80 Signal Pins and RoHS compatible Visit Amphenol Communications Solutions
    HM2P08PDE150N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type B with 115 Signal Pins and RoHS compatable Visit Amphenol Communications Solutions
    HM2P07PDM350N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type A with 110 Signal Pins and RoHS compatible Visit Amphenol Communications Solutions
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    50N2 Price and Stock

    Frontier Electronics Co Ltd 0201G250N2R7BCT

    CAP CER 2.7PF 25V C0G/NP0 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0201G250N2R7BCT Reel 30,000
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    TDK Corporation SGNE06C080MT150N25

    VARISTOR 8V 0201
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    DigiKey SGNE06C080MT150N25 Cut Tape 14,866 1
    • 1 $0.25
    • 10 $0.206
    • 100 $0.1093
    • 1000 $0.04888
    • 10000 $0.03834
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    Avnet Americas SGNE06C080MT150N25 Reel 10 Weeks 15,000
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    KORATECH 001A0050N250L0016J

    50N*250mm*1.0P*P6 Koraflex FFC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 001A0050N250L0016J Ammo Pack 1,580 1
    • 1 $20
    • 10 $18
    • 100 $8
    • 1000 $2.9
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    KEMET Corporation R46KN410050N2M

    CAP FILM 1UF 20% 560VDC RADIAL
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    DigiKey R46KN410050N2M Box 1,075 1
    • 1 $1
    • 10 $0.748
    • 100 $0.5587
    • 1000 $0.39345
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    Avnet Americas R46KN410050N2M Bulk 29 Weeks 300
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    ROHM Semiconductor RCJ050N25TL

    MOSFET N-CH 250V 5A LPTS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RCJ050N25TL Reel 1,000 1,000
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    Chip1Stop RCJ050N25TL Cut Tape 795
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    • 10 $0.479
    • 100 $0.427
    • 1000 $0.338
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    CoreStaff Co Ltd RCJ050N25TL 96
    • 1 $0.349
    • 10 $0.339
    • 100 $0.327
    • 1000 $0.324
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    Find more 50N2 price and stock on Findchips.com

    50N2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 50N20 O-247 O-204 O-247

    IXTP50N20PM

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF 50N20PM O-220 50N20P 02-16-06-E IXTP50N20PM

    50N28T

    Abstract: 50N28 DS99378 50N2 ixTA50N28T
    Text: Advance Technical Information IXTQ 50N28T IXTA 50N28T IXTP 50N28T Trench Gate Power MOSFET VDSS ID25 = 280 V = 50 A Ω < 60 mΩ RDS on N-Channel Enhancement Mode For PDP drivers TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF 50N28T O-220 O-263 50N28T 50N28 DS99378 50N2 ixTA50N28T

    50N20P

    Abstract: 50n20 50n2
    Text: PolarHTTM Power MOSFET IXTA 50N20P IXTP 50N20P IXTQ 50N20P VDSS ID25 = 200 V = 50 A ≤ 60 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 50N20P O-220 50N20P 50n20 50n2

    50N20P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 50N20P IXTA 50N20P IXTP 50N20P = 200 V = 50 A Ω = 60 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 50N20P O-220 065B1 728B1 123B1 728B1 50N20P

    40N25

    Abstract: 100N45 60N652 0101T photron
    Text: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1


    Original     		PDF 40N251 40N451 40N651 50N251 50N451 60N252 60N452 60N652 66N253 66N453 40N25 100N45 0101T photron

    50n20

    Abstract: 42N20
    Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 50N20 O-247 O-204 O-247 O-204 50n20 42N20

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


    Original     		PDF mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03

    Untitled

    Abstract: No abstract text available
    Text: 50N25N3LLH5 Dual N-channel 30 V, 0.006 Ω typ., 14.6 A PowerFLAT STripFET™ V Power MOSFET in 5x6 asymmetrical double island package Datasheet — preliminary data Features Order code 50N25N3LLH5 • VDSS RDS on max. ID Q1 30 V < 0.0135 Ω Q2 30 V < 0.0071 Ω 14.6 A


    Original     		PDF STL50N25N3LLH5

    GE Power Management multilin SR 750

    Abstract: GE multilin 750 GE multilin 750 relay relay GE multilin 760 multilin multilin 750 BS142 data sheet relay GE multilin 760 GE Power Management multilin SR 750 faults aeg power base 60 b
    Text: SR Feeder Management Relay 6 Complete, economical protection and monitoring of industrial and utility feeders. Features and Benefits Q Digital relay Q Tracks power system frequency Q Adjusts sampling rate to maintain accuracy Q Incorporates protection, control and


    Original     		PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS on max ID 50N25M5 250 V < 0.075 Ω 28 A • Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance


    Original     		PDF STB50N25M5

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions


    Original     		PDF IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 O-268 dv/00

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    42n20

    Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083
    Text: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family


    OCR Scan     		PDF 42N20 50N20 50N20 58N20 ixys ml 075 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    58N20

    Abstract: IXFH58N20 50n20
    Text: EUXYS VDSS HiPerFET Power MOSFETs IXFH/IXFT 50N20 IXFH 58N20 200 V 200 V Symbol Test Conditions Maximum Ratings VDSS T j =25°C to150°C 200 V V TCR Tj = 25° C to 150° C; RQS= 1 200 V Vos Continuous ±20 V v GSM Transient ±30 V 50 58 200 232 50 58 A


    OCR Scan     		PDF 50N20 58N20 to150 58N20 O-247 IXFH58N20

    1534F

    Abstract: 50n20
    Text: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous


    OCR Scan     		PDF 42N20 50N20 50N20 O-247 O-204 O-247 1534F

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    50N15

    Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet
    Text: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 | I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S 50N20, 15 50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)


    OCR Scan     		PDF IXTH50N15 IXTH50N20 IXTM50N15 IXTM50N20 00D3b5 IXTH50N20, IXTM50N20, 50-200V, 50N15 TL 1074 CT megamos 46 08 09 6 megamos 48 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet

    T7213

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 1995 ' • -aa A T b T " m i * Microelectronics ATT2MD01 100VG/1 OBase-T MAC and EISA/ISA System Interface CMOS Integrated Circuit Features and Benefits ■ Supports the proposed IEEE* 802.12 100VGAnyLAN specification. — Enables 100 Mbits/s transmissions over


    OCR Scan     		PDF ATT2MD01 100VG/1 100VGAnyLAN 10Base-T ATT2X01 100VG-AnyLAN 1995AT DS94-032LAN 005002ki T7213

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan     		PDF IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20