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    Toshiba America Electronic Components MG25Q6ES50A

    SILICON N CHANNEL IGBT GTR MODULE Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA MG25Q6ES50A 40
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    MG50Q6ES50

    Abstract: P channel 600v 50a IGBT vqe 71
    Text: TOSHIBA Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50 2-108E1A 961001EAA1 10//s MG50Q6ES50 P channel 600v 50a IGBT vqe 71