G50Q2YS50
Abstract: No abstract text available
Text: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load
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MG50Q2YS50A
G50Q2YS50A
G50Q2YS50
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)
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MG50Q2YS50A
961001EAA1
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IRF 24N
Abstract: MG50Q2YS50A 294D
Text: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)
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MG50Q2YS50A
2-94D4A
961001EAA1
10//s
IRF 24N
MG50Q2YS50A
294D
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MG50Q2YS50A
Abstract: No abstract text available
Text: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau
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MG50Q2YS50A
2-94D4A
MG50Q2YS50A
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MG50Q2YS50
Abstract: toshiba mg50q2ys50
Text: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode
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MG50Q2YS50
2-94D4A
MG50Q2YS50
toshiba mg50q2ys50
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG50Q2YS50
TjS125Â
10//s
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG50Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG50Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R C O NTRO L APPLICATIONS High Input Impedance High Speed : tf=0.3/is M ax. @Inductive Load Low Saturation Voltage ; VCE (sat) = 3.6V (Max.)
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MG50Q2YS50
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : t f= 0 .3 /* s Max. @ Inductive Load • Low Satu ration Voltage : V CE (sat) = 3.6V (Max.)
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MG50Q2YS50
961001EAA2
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toshiba mg50q2ys50
Abstract: MG50Q2YS50 tip 31 power transistor motor dc MG50Q2Y
Text: TOSHIBA MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode
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MG50Q2YS50
2-94D4A
toshiba mg50q2ys50
MG50Q2YS50
tip 31 power transistor motor dc
MG50Q2Y
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tf03
Abstract: MG50Q2YS50A
Text: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau
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MG50Q2YS50A
tf03
MG50Q2YS50A
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mg50q2ys50
Abstract: No abstract text available
Text: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)
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MG50Q2YS50
mg50q2ys50
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mg50q2ys50
Abstract: No abstract text available
Text: T O SH IB A MG50Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E ( s a t ) = 3.6V (Max.)
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MG50Q2YS50A
961001EAA1
mg50q2ys50
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MG50Q2YS50
Abstract: No abstract text available
Text: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)
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MG50Q2YS50
2-94D4A
MG50Q2YS50
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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