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    TOSHIBA GT20D201 Search Results

    TOSHIBA GT20D201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA GT20D201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT20D201

    Abstract: toshiba gt20d201 GT20 GT20D101
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101 •


    OCR Scan     		PDF GT20D201 -250V GT20D101 961001EAA2' GT20D201 toshiba gt20d201 GT20 GT20D101

    toshiba gt20d201

    Abstract: GT20D201
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL GT20D201 DATA SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION. • • • • High Breakdown Voltage : VGEg = —250V (MIN.) High Forward Transfer Admittance : |Yfe| = 10S (TYP.)


    OCR Scan     		PDF GT20D201) GT20D201 --250V GT20D101 GT20D201 toshiba gt20d201

    GT20D101

    Abstract: toshiba gt20d101 toshiba gt20d201 GT20D201 a 3050 c
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • 2 0.5 MAX. , & 3.3 ±0.2 High Breakdown Voltage : VCES~ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.)


    OCR Scan     		PDF GT20D201 -250V GT20D101 GT20D101 toshiba gt20d101 toshiba gt20d201 GT20D201 a 3050 c

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D101


    OCR Scan     		PDF GT20D201 GT20D101

    TOSH18A

    Abstract: No abstract text available
    Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ. Complementary to GT20D201


    OCR Scan     		PDF GT20D101 --250V GT20D201 TOSH18A

    Untitled

    Abstract: No abstract text available
    Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)


    OCR Scan     		PDF T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201

    GT20D101

    Abstract: GT20D201 pc180
    Text: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)


    OCR Scan     		PDF TDT72S0 0017AS1 GT20D101 -250V GT20D201 T-39-31 GT20D101 GT20D201 pc180

    t20d

    Abstract: GT20D201
    Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH POWER AM PLIFIER APPLICATION • H igh B reakdow n V o ltag e : V c E g = - 2 5 0 V Min. • H igh F orw ard T ran sfe r A d m ittan ce : |Yfe | = 1 0 S (T y p .)


    OCR Scan     		PDF GT20D201 t20d GT20D201

    toshiba gt20d101

    Abstract: GT20D101 GT20D201
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)


    OCR Scan     		PDF GT20D101 GT20D201 toshiba gt20d101 GT20D101 GT20D201

    Toshiba gt20d101

    Abstract: No abstract text available
    Text: 45E D • TCH7250 0017ÔS1 T ■ TOSHIBA IN S U LA T ED G ATE B IP O LA R T R A N S IS TO R TOS M - SILICO N P C H A N N E L T Y P E TOSHIBA GT20D201 DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance


    OCR Scan     		PDF GT20D101 -250V GT20D201 T-39-31 Toshiba gt20d101

    Toshiba gt20d101

    Abstract: GT20D101 GT20D201
    Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)


    OCR Scan     		PDF GT20D101 GT20D201 961001EAA2' Toshiba gt20d101 GT20D101 GT20D201

    toshiba gt20d101

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL G T 2 0 D 1 01 DATA SILICON N CHANNEL TYPE GT20D101 Unit in mm HIGH POWER AMPLIFIER APPLICATION. 20.5MAX • • • • High Breakdown Voltage : VCES —250V (Min.) High Forward Transfer Admittance : |Yfe|= 10S(Typ.)


    OCR Scan     		PDF GT20D101) --250V GT20D201 GT20D101 toshiba gt20d101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 0d.S±O.2 2 0.5M A X • High Breakdown Voltage : V C E S ~ 250V Min. • High Forward Transfer Admittance : |Yfe| = 10S(Typ.)


    OCR Scan     		PDF GT20D101 GT20D201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 03.3±O .2 2 0.5M A X • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe | = 10S(Typ.)


    OCR Scan     		PDF GT20D101 GT20D201

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : |Y fe|= 10S(Typ.)


    OCR Scan     		PDF GT20D101 GT20D201 F001EAA2'

    transistor d 4515

    Abstract: Transistor 4515 2-21F1C GT20D101
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201


    OCR Scan     		PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101

    IGBT gt20d201

    Abstract: p channel igbt GT20D201
    Text: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101


    OCR Scan     		PDF GT20D201 --250V GT20D101 IGBT gt20d201 p channel igbt GT20D201

    T20D201

    Abstract: gt20d201
    Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101


    OCR Scan     		PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201

    J3302

    Abstract: No abstract text available
    Text: GT20D201 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.)


    OCR Scan     		PDF GT20D201 --250V GT20D101 J3302

    GT20D201

    Abstract: GT20D101 10S0V
    Text: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201


    OCR Scan     		PDF GT20D101 10S0VP-) GT20D201 GT20D201 GT20D101 10S0V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D10i


    OCR Scan     		PDF GT20D201 GT2QD201 --250V GT20D10i

    GT20D101

    Abstract: No abstract text available
    Text: 45E D m T0T755G 0017äMfl TOSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSHIBA D I S C R E T E / O P T O H IG H P O W E R A M P L I F I E R A P P L I C A T I O N Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v


    OCR Scan     		PDF 10T755G GT20D101 GT20D201 T-39-31 --GT20D101

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe|= 10S(Typ.) Complementary to GT20D201


    OCR Scan     		PDF GT20D101 GT20D201