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    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG100J2YS50 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG1 0 0 J 2 Y S 5 0 HIGH P O W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • T h e E le c tro d e s a re Iso la te d from C ase. • H ig h I n p u t Im pedance. • In c lu d e s a C om plete H a lf B rid g e in O ne


    OCR Scan     		PDF MG100J2YS50 30/iS 15/iS

    MG50Q1BS1

    Abstract: SAY 115v MG50Q1BS11
    Text: TOSHIBA MG50Q1BS11 MG50Q1BS11 TO S H IB A G TR M O D U LE SILICO N N C H A N N EL IG 8 T Unit in mm HIGH P O W E R SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance H ighspeed : tf= 1.0,ws Max. Low Saturation Voltage: VçE(say = 2.7V(Max.)


    OCR Scan     		PDF MG50Q1BS11 2-33D1A MG50Q1BS1 SAY 115v MG50Q1BS11

    TOSH18A

    Abstract: No abstract text available
    Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ. Complementary to GT20D201


    OCR Scan     		PDF GT20D101 --250V GT20D201 TOSH18A