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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D10i


    OCR Scan     		PDF GT20D201 GT2QD201 --250V GT20D10i

    Untitled

    Abstract: No abstract text available
    Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)


    OCR Scan     		PDF T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201