IBZ MARKING CODE
Abstract: No abstract text available
Text: MMBT3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MMBT3906 is recommended. •t lo, Top View "1 Pin configuration 1 = Collector, 2 = Base, 3 = Emitter, Marking code 1N LjA—i—
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MMBT3904
MMBT3906
OT-23
IBZ MARKING CODE
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C3-A30D
Abstract: C3-A30F RC SUPPRESSOR C3-A30 RC SUPPRESSOR 20 kv C3-T31F C3-T31 C3A30 relay C3-G30 C3A30
Text: relays MRC 11 PIN STANDARD/LOW SIGNAL LEVEL/ OPEN CONTACTS • Lockable test button • Marking label on relay • 2 window mechanical flag not available on C3-G30 • Colour coded test button • Coil voltage marked on top of relay • Label carries full technical information
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C3-G30)
C3-A30.
0A/250V
A/250V
C3-T31.
C3-G30.
C2-G20,
C3-G30
EN60947
C3-A30D
C3-A30F
RC SUPPRESSOR
C3-A30
RC SUPPRESSOR 20 kv
C3-T31F
C3-T31
C3A30 relay
C3-G30
C3A30
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VPS05604
Abstract: CC140 marking 68 Marking w1s sot 1c36 sot-36
Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 6 • For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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68-08S
OT-363
VPS05604
EHA07193
EHA07291
OT-363
EHD07102
EHD07103
Oct-07-1999
VPS05604
CC140
marking 68
Marking w1s sot
1c36
sot-36
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wlga
Abstract: EN29SL800 cFeon 250
Text: EN29SL800 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all
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EN29SL800
wlga
EN29SL800
cFeon 250
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BAT68-08S
Abstract: VPS05604 diode array MARKING A3
Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6 Preliminary data For mixer application in the VHF/UHF range For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device
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Original
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BAT68-08S
VPS05604
OT-363
EHA07193
EHA07291
OT363
EHD07102
Jul-30-2001
BAT68-08S
VPS05604
diode array MARKING A3
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EN29LV800C
Abstract: cFeon
Text: EN29LV800C Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV800C
-100mA
-100A
EN29LV800C
cFeon
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Untitled
Abstract: No abstract text available
Text: FLASH PRELIMINARY AS8FLC1M32A Hermetic, Multi-Chip Module MCM FIGURE 1: PIN ASSIGNMENT (Top View) • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 59
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AS8FLC1M32A
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
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cFeon
Abstract: EN29LV400A
Text: EN29LV400A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV400A
cFeon
EN29LV400A
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W83778
Abstract: xd card flash controller 2001 gp74 joystick PS2 W83697SF MOA2 MOB2 ISO7816 PC99 RECS-80
Text: W83697SF WINBOND I/O W83697SF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 04/16/01 0.50 0.50 First published 2 111 04/27/01 0.51 0.51 Update the Top Marking 12/16/02 1.0 1.0 3 New Update 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All the
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W83697SF
W83697SF
697SD4
697SF
697SD5
W83778
xd card flash controller 2001
gp74
joystick PS2
MOA2
MOB2
ISO7816
PC99
RECS-80
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PDF
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MB74LS04
Abstract: MB74LS quartz 12000 marking MB8850H MC74HC04 MB8850 MB74LS0 MIL-STD-202E 103A
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical
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DS07-20101-7E
F9703
MB74LS04
MB74LS
quartz 12000 marking
MB8850H
MC74HC04
MB8850
MB74LS0
MIL-STD-202E 103A
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Untitled
Abstract: No abstract text available
Text: 2.5V ~ 3.3V SM TCXO CMOS GTXO-C31 Specifications GTXO-C31J: 2.5V supply GTXO-C31K: 2.8V supply GTXO-C31L: 3.3V supply Variant Parameters K L 4.0 ~ 54.0MHz Calibration tolerance: ±0.5ppm @ +25°C ±2°C ±3.0ppm ±2.5ppm
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GTXO-C31
GTXO-C31J:
GTXO-C31K:
GTXO-C31L:
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GTXO-C31K
Abstract: No abstract text available
Text: 2.5V ~ 3.3V SM TCXO CMOS GTXO-C31 Specifications GTXO-C31J: 2.5V supply GTXO-C31K: 2.8V supply GTXO-C31L: 3.3V supply Variant Parameters K L 4.0 ~ 54.0MHz Calibration tolerance: ±0.5ppm @ +25°C ±2°C ±3.0ppm ±2.5ppm
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GTXO-C31J:
GTXO-C31K:
GTXO-C31L:
GTXO-C31
GTXO-C31K
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Untitled
Abstract: No abstract text available
Text: DDZX5V1BTS - DDZX47TS Features • A Very Sharp Breakdown Characteristics Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current C1 · · · · · C3 KXX A1 A2 Mechanical Data · · SOT-363 C2 YM · · · Case: SOT-363, Plastic
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DDZX47TS
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DDZX20CTS-DDZX30DTS
DS30416
DDZX30DTS-DDZX47TS
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transistors marking C3Z
Abstract: No abstract text available
Text: Centrar CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.
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CMPTA44
TheCENTRALSEMICONDUCTORCMPTA44
OT-23
100mA
10MHz
transistors marking C3Z
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Untitled
Abstract: No abstract text available
Text: Surge arrester 3-electrode arrester Series/Type: Ordering code: T63-C350X B88069X7460B102 Version/Date: Version: Issue 04 / 2011-12-20 01 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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T63-C350X
B88069X7460B102
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TSS463
Abstract: Nitto MP8000 MARKING Z86 1000 BASE Isolation Modules 5000V EOS ESD S 61.1 hmt design data book MOLDING MATERIAL MP8000 HT Q100 temic gateway EIA-556-A
Text: Qualpack TSS463 / TSS461C TSS463 VAN Van Controller Serial Interface TSS461C VAN Van Controller TSS463/TSS461C VAN Controllers 1999 January TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. 2 – January 1999 1 Qualpack TS80C31X2/C32X2 1. Contents 1. Contents. 2
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TSS463
TSS461C
TSS461C
TSS463/TSS461C
TS80C31X2/C32X2
Nitto MP8000
MARKING Z86
1000 BASE Isolation Modules 5000V
EOS ESD S 61.1
hmt design data book
MOLDING MATERIAL MP8000
HT Q100
temic gateway
EIA-556-A
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94v0 c29
Abstract: IPC-SM-840 ipc sm 840 IPC-6011 IPC-SM-840 type b class 2 ipc 840 HSP50415EVAL1 IPC 6012 C7630 MD810
Text: A Ti • s' : " ï « U h - T ~ •• MD MD v n r~ c~> ceo ce s \S9 I M I 3Sfl SIO YM ss« I SM l l se a | iM I Mfl I itO ti3 Oì'J I 893 I l SM SM I 313 OM Y ò O - iiì\ I OSA | MO l [ ien teo I I 121 sta SE3 I I j't: UO SRT esi HT C30 2a • l a
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HSP50415EVAL1
bibr711-1
ibr73
bibr69
ipc-60111-6012.
BOARD-HSP50415EVAL1
94v0 c29
IPC-SM-840
ipc sm 840
IPC-6011
IPC-SM-840 type b class 2
ipc 840
IPC 6012
C7630
MD810
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Pin diode G4S
Abstract: BAR63-04S VPS05604
Text: BAR63-04S Silicon PIN Diode Preliminary data 4 5 PIN diode for high speed switching 6 of RF signals Low forward resistance, small inductance Very low capacitance 2 For frequencies up to 3 GHz 3 1 VPS05604 C1/A2 C3 A4 6 5 4 D2 D1 D4 D3 1 2 3 A1 C2 A3/C4
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BAR63-04S
VPS05604
EHA07464
OT363
Aug-27-2001
100MHz
EHD07139
EHD07138
Pin diode G4S
BAR63-04S
VPS05604
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Untitled
Abstract: No abstract text available
Text: Up Surface Mount RF Transformer 50Ω T gr a C3-1T de d V X+ er s io TC3-1T+ n* 5 to 300 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power DC Current Features -20°C to 85°C -55°C to 100°C 0.25W 30mA Permanent damage may occur if any of these limits are exceeded.
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AT224-1
M111888
ED-5914/1
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C4 Package
Abstract: VPS05604 diode array MARKING A3
Text: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 C1/A2 C3 A4 6 5 4 D2 D1 3 1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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70-04S
VPS05604
EHA07464
OT-363
Oct-07-1999
C4 Package
VPS05604
diode array MARKING A3
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NFA21SL806
Abstract: NFA21SL307 NFA21SL307X1A C31E12 NFA21S307
Text: C31E12.pdf 04.8.30 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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C31E12
NFA21SL806
NFA21SL806
NFA21SL307
NFA21SL307X1A
NFA21S307
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PDF
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a3 sot143
Abstract: BAR60 BAR61 VPS05178 BC238 EHM07026 EHA07013
Text: BAR 60, BAR 61 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz 4 BAR 60 2 BAR 61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR 60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT-143 BAR 61 61s
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VPS05178
EHA07013
EHA07014
OT-143
EHD07070
EHD07071
Oct-05-1999
BAR60
EHM07025
a3 sot143
BAR60
BAR61
VPS05178
BC238
EHM07026
EHA07013
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Untitled
Abstract: No abstract text available
Text: ± DRW NO. C- 3 4 7 - 5 3 0 5 - 5 0 0 REV A SCR NUMBER MRE0-7LKHXY.VER01 B CSAS-83KL5Z.VER01 S H2 , C3 C SHT1 C 7 A8 S H T 2 B5 C1 D ZONE ALL DOUBLE P O L A R I Z I N G B A C K P L A N E MODULE A S S E M B L Y P A R T NUMBER A S S I G N M E N T 347 - X 3 XX - X X X
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VER01
CSAS-83KL5Z
Q1118-347-5345-500
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4228SS
Abstract: MOSFET dual SOP-8 C395Q8 MTDN4228Q8 SOP8 Package
Text: CYStech Electronics Corp. Spec. No. : C395Q8 Issued Date : 2006.10.25 Revised Date : Page No. : 1/3 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN4228Q8 Description The MTDN4228Q8 provides the designer with the best combination of fast switching, ruggedized
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C395Q8
MTDN4228Q8
MTDN4228Q8
UL94V-0
4228SS
MOSFET dual SOP-8
C395Q8
SOP8 Package
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