Untitled
Abstract: No abstract text available
Text: HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal
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HY51V65173HGJ-45/5/6I
HY51V65173HGT-45/5/6I
16Bit
64Mbit
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TAF200
Abstract: sendust tdk ferrite cores for smps iron eddy current hysteresis loss micrometals Arnold Magnetics 75H-TAF200 75-TAF200 dimmer chokes iron core transformer
Text: Powder Cores / Distributed Gaped Core Selection Guide Introduction This application guide presents some general guidelines for the optimum choice of powder core materials MPP, Sendust/Kool Mu1, High Flux or Iron Powder for different inductor, choke and filter design requirements. The choice of one
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75-TAF200
TAF200
sendust
tdk ferrite cores for smps
iron eddy current hysteresis loss
micrometals
Arnold Magnetics
75H-TAF200
dimmer chokes
iron core transformer
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PDF
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HK-12S120-1010
Abstract: kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011
Text: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D41A
ENA1060
A1060-11/11
HK-12S120-1010
kze capacitor
HK-12S120
A1060-11
A1060
thyristor control circuit diagram
variable capacitor
A106011
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A1029
Abstract: kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor
Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D41A
ENA1029
A1029-11/11
A1029
kze capacitor
sanyo electrolytic capacitor
thyristor control circuit diagram
variable capacitor
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Untitled
Abstract: No abstract text available
Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D51A
ENA0985
A0985-11/11
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switching regulator 12v
Abstract: matsushita film capacitor ECQ SBT250-06J TN5D51 2200uf 3A capacitor capacitor 2200uf 35v 2200uF 100v capacitor Nippon Chemi-Con kze capacitor electrolytic capacitor 2200uF SANYO
Text: TN5D51 Ordering number : ENA0865 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D51 Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ).
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TN5D51
ENA0865
A0865-11/11
switching regulator 12v
matsushita film capacitor ECQ
SBT250-06J
TN5D51
2200uf 3A capacitor
capacitor 2200uf 35v
2200uF 100v capacitor
Nippon Chemi-Con kze capacitor
electrolytic capacitor 2200uF SANYO
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tn8d51a
Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D51A
ENA0985
A0985-11/11
tn8d51a
HK-12S120-1010
switching regulator 12v
nippon kze
2wl1
IT1326
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Untitled
Abstract: No abstract text available
Text: HY51V S 16400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY ESCRIPTION The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high
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HY51V
16400HG/HGL
16400HG/HGL
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FILM CAPACITOR 0.1/10/100
Abstract: kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor
Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D51A
ENA1031
A1031-11/11
FILM CAPACITOR 0.1/10/100
kze capacitor
matsushita film capacitor ECQ
10s100
switching regulator 12v
sanyo electrolytic capacitor
thyristor control circuit diagram
variable capacitor
Nippon Chemi-Con kze capacitor
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PDF
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Untitled
Abstract: No abstract text available
Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D41A
ENA1029
A1029-11/11
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kze capacitor
Abstract: thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram
Text: TN5D61A Ordering number : ENA1240 SANYO Semiconductors DATA SHEET TN5D61A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (24V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D61A
ENA1240
A1240-11/11
kze capacitor
thyristor 5a
THYRISTOR PRODUCT CATALOG
TN5D61A
FILM CAPACITOR 0.1/10/100
sanyo electrolytic capacitor
Schottky Diode 40V 5A
thyristor control circuit diagram
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capacitor 2200uf 35v
Abstract: electrolytic capacitor 2200uF SANYO Nippon Chemi-Con kze capacitor film capacitor 0.1uf 100v nippon kmg capacitor 2200uF/35V switching regulator 12v mosfet protection circuit diagram nippon kze HK-12S120-1010
Text: TN7D51 Ordering number : ENA0866 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN7D51 Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ).
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TN7D51
ENA0866
A0866-11/11
capacitor 2200uf 35v
electrolytic capacitor 2200uF SANYO
Nippon Chemi-Con kze capacitor
film capacitor 0.1uf 100v
nippon kmg
capacitor 2200uF/35V
switching regulator 12v
mosfet protection circuit diagram
nippon kze
HK-12S120-1010
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matsushita resistor network
Abstract: No abstract text available
Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D01A
ENA1446
A1446-11/11
matsushita resistor network
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Untitled
Abstract: No abstract text available
Text: HY51V S 17400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)17400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17400HG/HGL offers Fast Page Mode as a high
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HY51V
17400HG/HGL
17400HG/HGL
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kze capacitor
Abstract: ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network
Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D01A
ENA1446
A1446-11/11
kze capacitor
ELECTROLYTIC capacitor 3000
barrier network fuse
Chemi-Con KZE
thyristor regulator
matsushita resistor network
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kze capacitor
Abstract: matsushita film capacitor ECQ SBT250-06J TN5D41 2200uf 3A capacitor 2wl1 electrolytic capacitor 2200uF SANYO capacitor 2200uF/35V
Text: TN5D41 Ordering number : ENA0863 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D41 Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ).
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TN5D41
ENA0863
A0863-11/11
kze capacitor
matsushita film capacitor ECQ
SBT250-06J
TN5D41
2200uf 3A capacitor
2wl1
electrolytic capacitor 2200uF SANYO
capacitor 2200uF/35V
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Untitled
Abstract: No abstract text available
Text: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
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TN8D41A
ENA1060
A1060-11/11
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HY51V65803HG
Abstract: No abstract text available
Text: HY51V S 65803HG/HGL 8M x 8Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 8,388,608 x 8 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal
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HY51V
65803HG/HGL
64Mbit
400mil
32pin
HY51V65803HG
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Untitled
Abstract: No abstract text available
Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).
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TN5D51A
ENA1031
A1031-11/11
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D28C04
Abstract: 6023B upd28c04 PD28C04
Text: N E C ELECTRONI CS NEC INC blE D L.427525 DD3S417 NEC Electronics Inc. Description Pin Configuration The jl/PD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga nized as 512 x 8 bits and fabricated with an advanced
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DD3S417
uPD28C04
24-Pin
/PD28C04
096-bit
iPD28C04
/iPD28C04
D28C04
6023B
PD28C04
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D28C05
Abstract: AIPD28C05 fjs 500
Text: N E C ELECTRONICS INC bl E T> • bM27S2S 003542b fk fM ä Y " MET * N E C E fiPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. 1 3 ' 2 ? Description Pin Configuration The fjPD28C05 is an electrically erasable and program mable read-only memory EEPROM organized as 512
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bM27S2S
003542b
uPD28C05
fjPD28C05
PD28C05
24-pin
ConfM27S
D03543
iPD28C05
MIH-62248
D28C05
AIPD28C05
fjs 500
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6023B
Abstract: PD28C04 ho27a
Text: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power
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uPD28C04
24-Pin
jPD28C04
096-bit
D28C04
pPD28C04
6023B
PD28C04
ho27a
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KM416C64
Abstract: No abstract text available
Text: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption
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KM416C64
64Kx16
KM416C64/L
KM416C64
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Untitled
Abstract: No abstract text available
Text: Chopper Regulators PQtCF2 PQ1CF2 TO-220 Type Chopper Regulator • Features ■ Outline Dimensions U n it. m m • • • • Maximum switching current: 1.5A Built-in ON/OFF control function Built-in soft start function Built-in oscillation circuit (oscillation frequency:TYP.100kHz)
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O-220
100kHz)
to-30V)
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