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    TO272* APPLICATION Search Results

    TO272* APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC3676EUJ#TRPBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676IUJ-1#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676ELXE#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676HUJ#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676ILXE#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy

    TO272* APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN3789

    Abstract: TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL
    Text: TO270WB TO270WBL Clamping Device The TO270WB and the TO270WBL are clamping devices designed to provide improved thermal and electrical performance for RF Power Transistors. Based on the recommendations in the Freescale Semiconductor Application Note AN3789, the TO270WB and TO270WBL are built to work


    Original     		PDF O270WB O270WBL O270WB O270WBL AN3789, AN3789 O-270, TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF

    NI-780-4

    Abstract: TO272 TO-270-2 NI 780 NI-360HF power led projector Tutorial TO-270 qfn 8x8 reel PQFN 8x8 OM-780-2
    Text: RF Tape and Reel Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure


    Original     		PDF OT--363 OT--89 PFP--16, O--270--2, O--270--2 NI--360HF, NI--400, NI--400S, NI--780S--4, OM--780--2 NI-780-4 TO272 TO-270-2 NI 780 NI-360HF power led projector Tutorial TO-270 qfn 8x8 reel PQFN 8x8 OM-780-2

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    C12R1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to


    Original     		PDF MWIC930/D MWIC930 MWIC930R1 MWIC930GR1 C12R1

    4000 watts power amplifier circuit diagram pcb l

    Abstract: MW4IC2020GMBR1 MW4IC2020MBR1 TLX8-0300 25C2923
    Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC


    Original     		PDF MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 4000 watts power amplifier circuit diagram pcb l MW4IC2020GMBR1 TLX8-0300 25C2923

    08055C103KAT

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High


    Original     		PDF MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 08055C103KAT

    Motorola transistors MRF646

    Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
    Text: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today


    Original     		PDF SG46/D Motorola transistors MRF646 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860

    hatching machine

    Abstract: MWIC930 MWIC930GR1 MWIC930R1 RM73B2AT102J
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and


    Original     		PDF MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 hatching machine MWIC930GR1 RM73B2AT102J

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC970N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers MW5IC970NBR1 MW5IC970GNBR1 Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband


    Original     		PDF MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 MW5IC970NBR1

    ATC600S3R9BT250

    Abstract: ATC600S560JT250T GPS2020 MW5IC970NBR1 TO272* APPLICATION CRCW08054751FKEA Rogers 4350B AN1977 AN1987 JESD22-A113
    Text: Document Number: MW5IC970N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers MW5IC970NBR1 MW5IC970GNBR1 Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband


    Original     		PDF MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 MW5IC970NBR1 ATC600S3R9BT250 ATC600S560JT250T GPS2020 TO272* APPLICATION CRCW08054751FKEA Rogers 4350B AN1977 AN1987 JESD22-A113

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1

    03B3

    Abstract: 1206 cms diode 100B100JCA500X MW4IC915GMBR1 MW4IC915MBR1 TAJE226M035R bourns 3224w
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM


    Original     		PDF MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 03B3 1206 cms diode 100B100JCA500X MW4IC915GMBR1 TAJE226M035R bourns 3224w

    MRF6VP11KH

    Abstract: MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf
    Text: Freescale’s Industrial, Scientific and Medical RF Semiconductors ISM Solutions Advanced technology for top RF power performance Utilizing Freescale’s innovative 50V VHV6 LDMOS very high voltage sixth generation Laterally Typical ISM Applications Diffused Metal Oxide Semiconductor technology,


    Original     		PDF BR1593 MRF6VP11KH MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    AN3263

    Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 AN3263 MRF6V4300N AN1955 MRF6V4300NBR1 C3225JB2A105KT

    J771

    Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1

    M 9587

    Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
    Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station


    Original     		PDF SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210

    MRF6S19060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N

    MRF6S19060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 5, 12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N

    AD250

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S4125N IS--95 MRF5S4125NR1 MRF5S4125NBR1 AD250

    T491B476K016AT

    Abstract: CRCW121015R0FKEA MRFE6S9125NR1 A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications


    Original     		PDF MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT CRCW121015R0FKEA A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N