TO272* APPLICATION Search Results

**TO272* APPLICATION Result Highlights (5)**

Part	Manufacturer	Description
CA3079	Rochester Electronics LLC	CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
CA3059	Rochester Electronics LLC	CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
CA3059-G	Rochester Electronics LLC	CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
TCM3105NL	Rochester Electronics LLC	TCM3105NL - FSK Modem, PDIP16
AM79865JC	Rochester Electronics LLC	AM79865 -Physical Data Transmitter

**TO272* APPLICATION Datasheets Context Search**

Catalog Datasheet	Type	Document Tags	PDF
AN3789 Abstract: TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL Text: TO270WB TO270WBL Clamping Device The TO270WB and the TO270WBL are clamping devices designed to provide improved thermal and electrical performance for RF Power Transistors. Based on the recommendations in the Freescale Semiconductor Application Note AN3789, the TO270WB and TO270WBL are built to work	Original	O270WB O270WBL O270WB O270WBL AN3789, AN3789 O-270, TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL	PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original		PDF
NI-780-4 Abstract: TO272 TO-270-2 NI 780 NI-360HF power led projector Tutorial TO-270 qfn 8x8 reel PQFN 8x8 OM-780-2 Text: RF Tape and Reel Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure	Original	OT--363 OT--89 PFP--16, O--270--2, O--270--2 NI--360HF, NI--400, NI--400S, NI--780S--4, OM--780--2 NI-780-4 TO272 TO-270-2 NI 780 NI-360HF power led projector Tutorial TO-270 qfn 8x8 reel PQFN 8x8 OM-780-2	PDF
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original		PDF
C12R1 Abstract: No abstract text available Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to	Original	MWIC930/D MWIC930 MWIC930R1 MWIC930GR1 C12R1	PDF
4000 watts power amplifier circuit diagram pcb l Abstract: MW4IC2020GMBR1 MW4IC2020MBR1 TLX8-0300 25C2923 Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC	Original	MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 4000 watts power amplifier circuit diagram pcb l MW4IC2020GMBR1 TLX8-0300 25C2923	PDF
08055C103KAT Abstract: No abstract text available Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 08055C103KAT	PDF
Motorola transistors MRF646 Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860 Text: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today	Original	SG46/D Motorola transistors MRF646 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860	PDF
hatching machine Abstract: MWIC930 MWIC930GR1 MWIC930R1 RM73B2AT102J Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and	Original	MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 hatching machine MWIC930GR1 RM73B2AT102J	PDF
Untitled Abstract: No abstract text available Text: Document Number: MW5IC970N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers MW5IC970NBR1 MW5IC970GNBR1 Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband	Original	MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 MW5IC970NBR1	PDF
ATC600S3R9BT250 Abstract: ATC600S560JT250T GPS2020 MW5IC970NBR1 TO272* APPLICATION CRCW08054751FKEA Rogers 4350B AN1977 AN1987 JESD22-A113 Text: Document Number: MW5IC970N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers MW5IC970NBR1 MW5IC970GNBR1 Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband	Original	MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 MW5IC970NBR1 ATC600S3R9BT250 ATC600S560JT250T GPS2020 TO272* APPLICATION CRCW08054751FKEA Rogers 4350B AN1977 AN1987 JESD22-A113	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage	Original	MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1	PDF
03B3 Abstract: 1206 cms diode 100B100JCA500X MW4IC915GMBR1 MW4IC915MBR1 TAJE226M035R bourns 3224w Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 03B3 1206 cms diode 100B100JCA500X MW4IC915GMBR1 TAJE226M035R bourns 3224w	PDF
MRF6VP11KH Abstract: MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf Text: Freescale’s Industrial, Scientific and Medical RF Semiconductors ISM Solutions Advanced technology for top RF power performance Utilizing Freescale’s innovative 50V VHV6 LDMOS very high voltage sixth generation Laterally Typical ISM Applications Diffused Metal Oxide Semiconductor technology,	Original	BR1593 MRF6VP11KH MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf	PDF

ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1	PDF
AN3263 Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with	Original	MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 AN3263 MRF6V4300N AN1955 MRF6V4300NBR1 C3225JB2A105KT	PDF
J771 Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with	Original	MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1	PDF
M 9587 Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210 Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station	Original	SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210	PDF
MRF6S19060N Abstract: No abstract text available Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N	PDF
MRF6S19060N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 5, 12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930	Original	MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N	PDF
AD250 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of	Original	MRF5S4125N IS--95 MRF5S4125NR1 MRF5S4125NBR1 AD250	PDF
T491B476K016AT Abstract: CRCW121015R0FKEA MRFE6S9125NR1 A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications	Original	MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT CRCW121015R0FKEA A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1	PDF
MRF5S21045N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N	PDF

TO272* APPLICATION Search Results

TO272* APPLICATION Result Highlights (5)

TO272* APPLICATION Datasheets Context Search

AN3789

MRF8P9040N

NI-780-4

power transistors table

C12R1

4000 watts power amplifier circuit diagram pcb l

08055C103KAT

Motorola transistors MRF646

hatching machine

Untitled

ATC600S3R9BT250

Untitled

03B3

MRF6VP11KH

ipc 9850

AN3263

J771

Untitled

M 9587

MRF6S19060N

MRF6S19060N

AD250

T491B476K016AT

MRF5S21045N

**TO272* APPLICATION Result Highlights (5)**

**TO272* APPLICATION Datasheets Context Search**