T491B476K016AT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications
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MRFE6S9125N
MRFE6S9125NR1
MRFE6S9125NBR1
T491B476K016AT
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T491B476K016AT
Abstract: CRCW121015R0FKEA MRFE6S9125NR1 A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications
|
Original
|
PDF
|
MRFE6S9125N
MRFE6S9125NR1
MRFE6S9125NBR1
T491B476K016AT
CRCW121015R0FKEA
A114
A115
AN1955
C101
JESD22
MRF6S9125NBR1
MRF6S9125NR1
|