AN3789
Abstract: TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL
Text: TO270WB TO270WBL Clamping Device The TO270WB and the TO270WBL are clamping devices designed to provide improved thermal and electrical performance for RF Power Transistors. Based on the recommendations in the Freescale Semiconductor Application Note AN3789, the TO270WB and TO270WBL are built to work
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O270WB
O270WBL
O270WB
O270WBL
AN3789,
AN3789
O-270,
TO270WB
WB-14
T0272
TO272* APPLICATION
TO-270
TO272
TO270
270WBL
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5300N
MRFE6VP5300NR1
MRFE6VP5300GNR1
MRFE6VP5300NR1
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MMG3014N
Abstract: No abstract text available
Text: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup
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MMG3014N
MMG3014N
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transistor B 764
Abstract: ATC600F150JT250XT 0051A
Text: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from
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AFT09MP055N
AFT09MP055NR1
AFT09MP055GNR1
AFT09MP055NR1
transistor B 764
ATC600F150JT250XT
0051A
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MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless
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RR1220P-102-D
Abstract: D58764 HSF-141C-35
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5150N
MRFE6VP5150NR1
MRFE6VP5150GNR1
MRFE6VP5150NR1
RR1220P-102-D
D58764
HSF-141C-35
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J221
Abstract: CW12010T0050G
Text: Freescale Semiconductor Technical Data Document Number: A2I25D012N Rev. 0, 9/2014 RF LDMOS Wideband Integrated Power Amplifiers The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz. This
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A2I25D012N
A2I25D012N
A2I25D012NR1
A2I25D012GNR1
J221
CW12010T0050G
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V
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MHT2000N
MHT2000NR1
MHT2000GNR1
5/2014Semiconductor,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an
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MMRF1316N
MMRF1316NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5300N
MRFE6VP5300NR1
MRFE6VP5300GNR1
MRFE6VP5300NR1
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HSF-141C-35
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5150N
MRFE6VP5150NR1
MRFE6VP5150GNR1
MRFE6VP5150NR1
5/2014Semiconductor,
HSF-141C-35
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Product Selector Guide
Abstract: NI-400S-2S
Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high
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MMRF2004NBR1ï
MMRF2006NT1ï
1230S--4L2L
NI--780GS--4L
NI--880XGS--2L
NI--1230H--4S
NI--1230S--4S4S
OM--780--2L
OM--780G--2L
OM--780--4L
Product Selector Guide
NI-400S-2S
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 1, 8/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT05MP075N
AFT05MP075NR1
AFT05MP075GNR1
AFT05MP075NR1
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1018N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs MMRF1018NR1 MMRF1018NBR1 These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.
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MMRF1018N
MMRF1018NR1
MMRF1018NBR1
MMRF1018NR1
7/2014Semiconductor,
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