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    NXP Semiconductors MMRF1018NBR1

    MMRF1018 - VHV6 860MHz 90W TO272WB4
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    Rochester Electronics MMRF1018NBR1 500 1
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    MMRF1018NBR1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMRF1018NBR1 NXP USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 120V 860MHZ Original PDF

    MMRF1018NBR1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1018N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs MMRF1018NR1 MMRF1018NBR1 These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.


    Original     		PDF MMRF1018N MMRF1018NR1 MMRF1018NBR1 MMRF1018NR1 7/2014Semiconductor,

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    Product Selector Guide

    Abstract: NI-400S-2S
    Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high


    Original     		PDF MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S