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    MRFE6VP5150N Search Results

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    MRFE6VP5150N Price and Stock

    NXP Semiconductors MRFE6VP5150NR1

    RF MOSFET LDMOS 50V TO270-4
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    DigiKey MRFE6VP5150NR1 Cut Tape 1
    • 1 $41.67
    • 10 $34.022
    • 100 $30.0134
    • 1000 $29.01312
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    MRFE6VP5150NR1 Digi-Reel 1
    • 1 $41.67
    • 10 $34.022
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    MRFE6VP5150NR1 Reel 500
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    Avnet Americas MRFE6VP5150NR1 Reel 10 Weeks 500
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    Mouser Electronics MRFE6VP5150NR1 77
    • 1 $42.51
    • 10 $34.71
    • 100 $30.62
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    Newark MRFE6VP5150NR1 Bulk 52 1
    • 1 $24.7
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    Rochester Electronics MRFE6VP5150NR1 425 1
    • 1 $33.53
    • 10 $33.53
    • 100 $31.52
    • 1000 $28.5
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    Richardson RFPD MRFE6VP5150NR1 404 1
    • 1 $33.99
    • 10 $32.94
    • 100 $30.59
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    Avnet Silica MRFE6VP5150NR1 12 Weeks 500
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    EBV Elektronik MRFE6VP5150NR1 500 12 Weeks 500
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    Freescale Semiconductor MRFE6VP5150NR1

    RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, MOSFET, TO-270
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MRFE6VP5150NR1 2 1
    • 1 $33.53
    • 10 $33.53
    • 100 $31.52
    • 1000 $28.5
    • 10000 $28.5
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    MRFE6VP5150N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFE6VP5150NR1 NXP USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 133V 230MHZ TO-270 Original PDF

    MRFE6VP5150N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 RR1220P-102-D D58764 HSF-141C-35 PDF

    HSF-141C-35

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 5/2014Semiconductor, HSF-141C-35 PDF

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF