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    TO252-3 RTHJC Search Results

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    2N0623

    Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
    Text: SPD30N06S2-23 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420


    Original     		PDF SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, SPD30N06S2-23 2N0623 S7420 ANPS071E BSPD30N06S2-23

    PN06L13

    Abstract: No abstract text available
    Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID  Logic Level V m 12.7 50 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		PDF SPD50N06S2L-13 SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, PN06L13

    2N0615

    Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253


    Original     		PDF SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15

    2n0680

    Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423


    Original     		PDF SPD14N06S2-80 Q67060-S7423 2N0680 BSPD14N06S2-80, SPD14N06S2-80 2n0680 g39 SMD BSPD14N06S2-80

    2N0623

    Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
    Text: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420


    Original     		PDF SPD30N06S2-23 SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, 2N0623 INFINEON PART MARKING to252 2N062 smd diode marking G12

    2N0615

    Abstract: SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253


    Original     		PDF SPD30N06S2-15 SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, 2N0615

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427


    Original     		PDF SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 a6024

    2N0822

    Abstract: SPD30N08S2-22
    Text: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 21.5 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413


    Original     		PDF SPD30N08S2-22 SPD30N08S2-22 Q67060-S7413 2N0822 BSPD30N08S2-22, 2N0822

    2n0680

    Abstract: BSPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 80 m ID 17 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423


    Original     		PDF SPD14N06S2-80 SPD14N06S2-80 Q67060-S7423 2N0680 200Aay BSPD14N06S2-80, 2n0680 BSPD14N06S2-80

    PN06L13

    Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
    Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		PDF SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 ANPS071E BSPD50N06S2L-13

    PN06L13

    Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
    Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		PDF SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 PN06L 34Dg ANPS071E BSPD50N06S2L-13 S7421

    2N0640

    Abstract: MAX408
    Text: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 40 m ID 29 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427


    Original     		PDF SPD25N06S2-40 SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, 2N0640 MAX408

    pn0614

    Abstract: Q67060-S7418 smd diode 67A
    Text: SPD50N06S2-14 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 14.4 50 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD50N06S2-14 Package Ordering Code P- TO252 -3-11 Q67060-S7418


    Original     		PDF SPD50N06S2-14 SPD50N06S2-14 Q67060-S7418 PN0614 BSPD50N06S2-14, pn0614 Q67060-S7418 smd diode 67A

    11n10

    Abstract: smd diode marking 78A TRANSISTOR SMD MARKING CODE SPD11N10 SPU11N10
    Text: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 170 mΩ • 175°C operating temperature ID 10.5 A • Avalanche rated P- TO251 -3-1 P- TO252 -3-11 • dv/dt rated


    Original     		PDF SPD11N10 SPU11N10 Q67042-S4121 11N10 Q67042-S4122 11n10 smd diode marking 78A TRANSISTOR SMD MARKING CODE SPD11N10 SPU11N10

    marking 113a

    Abstract: No abstract text available
    Text: SPD50N03S2L-06 h OptiMOS&!Power-Transistor Feature % N-Channel Product Summary VDS 30 V % Enhancement mode RDS on 6.4 m" % Logic Level ID 50 A Ph- TO252 -3 % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance


    Original     		PDF SPD50N03S2L-06 PN03L06 QS-0Z-2008 SPD50N03S2L-06 PG-TO252-3 marking 113a

    pn0307

    Abstract: No abstract text available
    Text: SPD50N03S2-07 G OptiMOS&!Power-Transistor Product Summary VDS 30 V Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS on product (FOM) RDS(on) 7.3 m" ID 50 A Ph-TO252-3 %!Superior thermal resistance %!175°C operating temperature % Avalanche rated


    Original     		PDF SPD50N03S2-07 Ph-TO252-3 PN0307 QS-0Z-2008 SPD50N03S2-07 pn0307

    02N50C3

    Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570
    Text: SPD02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N50 02N5 SPD02N50C3 Q67040-S4570

    20n03l

    Abstract: Q67042-S4106 20n03 20n03l smd ANPS071E IPD20N03L IPU20N03L
    Text: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance


    Original     		PDF IPD20N03L IPU20N03L Q67042-S4050 20N03L Q67042-S4106 20n03l Q67042-S4106 20n03 20n03l smd ANPS071E IPD20N03L IPU20N03L

    07n03l

    Abstract: 07N03 Q67042-S4105 P- TO252 -3-11 ANPS071E IPD07N03L IPU07N03L Q67042-S4029 DIODE 07n03l
    Text: IPD07N03L IPU07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 6.8 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance


    Original     		PDF IPD07N03L IPU07N03L Q67042-S4029 07N03L Q67042-S4105 07n03l 07N03 Q67042-S4105 P- TO252 -3-11 ANPS071E IPD07N03L IPU07N03L Q67042-S4029 DIODE 07n03l

    P-TO252

    Abstract: P-TO252-3-1 ag 20
    Text: Package and Thermal Information P-TO252-3-1 Footprint/Dimensions +0.15 6.5 -0.10 2.3 +0.05 -0.10 A 0.8 ±0.15 1 ±0.1 5.76 GND 0.51 min 4.17 1 0.15 max per side 1.2 3 PC-Board 0.0.15 0.5 +0.08 -0.04 3x 0.75 ±0.1 2.28 4.57 Reflow soldering 0.9 +0.08 -0.04


    Original     		PDF P-TO252-3-1 P-TO252 P-TO252-3-1 ag 20

    02n60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252

    20n03l

    Abstract: IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L
    Text: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance


    Original     		PDF IPD20N03L IPU20N03L Q67042-S4050 20N03L Q67042-S4106 20n03l IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L

    P-TO251-3

    Abstract: SPD09P06PL SPU09P06PL SPD09P06PL G
    Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature  P-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated P-TO251-3 VDS -60 V RDS on 0.25  ID -9.7 A P-TO252-3 Drain pin 2 Type Package


    Original     		PDF SPD09P06PL SPU09P06PL P-TO251-3 P-TO252-3 P-TO251-3 SPD09P06PL SPU09P06PL SPD09P06PL G