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    02N50 Search Results

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    02N50 Price and Stock

    Vishay Dale NTHS0805N02N5001JE

    THERMISTOR NTC 5KOHM 3181K 0805
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    DigiKey NTHS0805N02N5001JE Cut Tape 7,610 1
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    NTHS0805N02N5001JE Reel 4,000 2,000
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    Nisshinbo Micro Devices RP402N501F-TR-FE

    IC REG BOOST 5V 800MA SOT23-5
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    DigiKey RP402N501F-TR-FE Digi-Reel 6,504 1
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    RP402N501F-TR-FE Reel 3,000 3,000
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    Mouser Electronics RP402N501F-TR-FE 3,635
    • 1 $1.59
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    Vishay Dale NTHS1206N02N5001JE

    THERMISTOR NTC 5KOHM 3477K 1206
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    DigiKey NTHS1206N02N5001JE Digi-Reel 2,849 1
    • 1 $3.72
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    NTHS1206N02N5001JE Cut Tape 2,849 1
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    Torex Semiconductor LTD XC6902N501MR-G

    IC REG LINEAR -5V 200MA SOT23
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    DigiKey XC6902N501MR-G Cut Tape 2,390 1
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    XC6902N501MR-G Digi-Reel 2,390 1
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    Avnet Americas XC6902N501MR-G Reel 12 Weeks 3,000
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    Mouser Electronics XC6902N501MR-G 402
    • 1 $0.83
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    Newark XC6902N501MR-G Cut Tape 2,658 1
    • 1 $0.874
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    TME XC6902N501MR-G 1
    • 1 $0.798
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    Avnet Silica XC6902N501MR-G 9 Weeks 3,000
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    Chip1Stop XC6902N501MR-G Cut Tape 1,361
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    Ohmite Mfg Co HVC0402N5007KET

    RES SMD 5G OHM 10% 1/20W 0402
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    DigiKey HVC0402N5007KET Cut Tape 1,864 1
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    HVC0402N5007KET Reel 1,500 500
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    Newark HVC0402N5007KET Reel 500
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    RS HVC0402N5007KET Bulk 14 Weeks 500
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    Richardson RFPD HVC0402N5007KET 500
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    Master Electronics HVC0402N5007KET
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    Find more 02N50 price and stock on Findchips.com

    02N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-220AD

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on = 500 V = 200 mA = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20


    Original     		PDF 02N50D O-220AD 405B2 TO-220AD

    02N5

    Abstract: IXTP 02N50D
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous


    Original     		PDF 02N50D O-220 405B2 02N5 IXTP 02N50D

    TO-220AD

    Abstract: 02N5 IXTP 02N50D depletion MOSFET
    Text: Advance Technical Information High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


    Original     		PDF 02N50D O-220AD TO-220AD 02N5 IXTP 02N50D depletion MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 02N50 Preliminary Power MOSFET 0.2A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 02N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high breakdown voltage  FEATURES * RDS on =75Ω @VGS=10V, ID=0.15A


    Original     		PDF 02N50 02N50 02N50L-TM3-T 02N50G-TM3-T O-251 QW-R502-975

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    02N50C3

    Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
    Text: 02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    02N50C3

    Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570
    Text: 02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N50 02N5 SPD02N50C3 Q67040-S4570

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D

    AFM02N8-32

    Abstract: 02N5 02N50 AF035P1-00
    Text: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400


    OCR Scan     		PDF 02N5-00 AFP02N2-00 AFP02N8-00 AFM02N5-55/56 AFP02N2-55/56 AFP02N8-55/56 AFM02N8-32 -55Z-56 AF035P1-00 AFM06P2-00 AFM02N8-32 02N5 02N50