PN06L06
Abstract: No abstract text available
Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-06
PG-TO252-3-11
PN06L06
PN06L06
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PN06L13
Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13
Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-13
PG-TO252-3-11
PN06L13
PN06L13
Application Note ANPS071E
PG-TO252-3-11
Diode d29 08
ANPS071E
IPD50N06S3L-13
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PN06L13
Abstract: No abstract text available
Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID Logic Level V m 12.7 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
PN06L13
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PN06L13
Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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PDF
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SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
ANPS071E
BSPD50N06S2L-13
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PN06L05
Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated
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SPP100N06S2L-05
SPB100N06S2L-05
SPP100N06S2L-05
Q67060-S6043
SPB100N06S2L-05
Q67060-S6042
PN06L05
BSPP100N06S2L-05
BSPB100N06S2L-05,
PN06L05
ANPS071E
Q67060-S6043
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PN06L13
Abstract: SMD MARKING "68A" BSPD50N06S2L-13 P-TO252 SPD50N06S2L-13 S7421
Text: SPD50N06S2L-13 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 55 VDS RDS on ID V m 12.7 50 A P-TO252 Type Package Ordering Code
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SPD50N06S2L-13
P-TO252
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
SMD MARKING "68A"
BSPD50N06S2L-13
P-TO252
S7421
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PN06L13
Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
PN06L
34Dg
ANPS071E
BSPD50N06S2L-13
S7421
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PN06L13
Abstract: IPD50N06S2L-13 ANPS071E PG-TO252-3-11
Text: IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 12.7 mΩ 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S2L-13
PG-TO252-3-11
PN06L13
PN06L13
IPD50N06S2L-13
ANPS071E
PG-TO252-3-11
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PN06L05
Abstract: PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003
Text: IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.4 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB100N06S2L-05
IPP100N06S2L-05
PG-TO263-3-2
PG-TO220-3-1
SP0002-19003
PN06L05
PN06L05
PN06L
IPP100N06S2L-05
SP000219003
SP0002-18879
ANPS071E
IPB100N06S2L-05
PG-TO263-3-2
SP0002-19003
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26072
Abstract: pn06
Text: IPD90N06S3L-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.1 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD90N06S3L-07
PG-TO252-3-11
PN06L07
26072
pn06
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PN06L
Abstract: Marking g51 PN06L07
Text: IPD90N06S3L-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.1 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD90N06S3L-07
PG-TO252-3-11
PN06L07
PN06L
Marking g51
PN06L07
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PN06L13
Abstract: PN06L IPD50N06S3L-13
Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-13
PG-TO252-3-11
PN06L13
68-1ems
PN06L13
PN06L
IPD50N06S3L-13
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PG-TO252-3
Abstract: No abstract text available
Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-08
PG-TO252-3-11
PN06L08
PG-TO252-3
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pn06l05
Abstract: SPB100N06S2L-05 pn06 BSPP100N06S2L-05 ANPS071E SPP100N06S2L-05 Q67060-S6043 PN06L AS160
Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.4 mΩ • Logic Level ID 100 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated
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SPP100N06S2L-05
SPB100N06S2L-05
SPP100N06S2L-05
Q67060-S6043
PN06L05
SPB100N06S2L-05
Q67060-S6042
BSPP100N06S2L-05
BSPB100N06S2L-05,
pn06l05
pn06
ANPS071E
Q67060-S6043
PN06L
AS160
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pn06l05
Abstract: marking code br 37 SMD
Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 4.4 m 100 A P- TO220 -3-1 Avalanche rated dv/dt rated
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SPP100N06S2L-05
SPB100N06S2L-05
Q67060-S6043
Q67060-S6042
PN06L05
BSPP100N06S2L-05
BSPB100N06S2L-05,
marking code br 37 SMD
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pn06l05
Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
Text: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4
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SPP100N06S2L-05
SPB100N06S2L-05
P-TO263-3-2
P-TO220-3-1
SPP100N06S2L-05
Q67060-S6043
PN06L05
SPB100N06S2L-05
pn06l05
SPB100N06S2L05
Q67060-S6042
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Untitled
Abstract: No abstract text available
Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD50N06S3L-08
PG-TO252-3-11
PN06L08
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