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    SPD02N60 Search Results

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    SPD02N60 Price and Stock

    Infineon Technologies AG SPD02N60C3BTMA1

    MOSFET N-CH 650V 1.8A TO252-3
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    DigiKey SPD02N60C3BTMA1 Cut Tape
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    SPD02N60C3BTMA1 Reel
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    Rochester Electronics SPD02N60C3BTMA1 6 1
    • 1 $0.4375
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    • 100 $0.4113
    • 1000 $0.3719
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    Infineon Technologies AG SPD02N60S5BTMA1

    MOSFET N-CH 600V 1.8A TO252-3
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    SPD02N60S5BTMA1 Digi-Reel 1
    • 1 $1.14
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    Rochester Electronics SPD02N60S5BTMA1 13,370 1
    • 1 $0.4375
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    • 100 $0.4113
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    Rochester Electronics LLC SPD02N60S5BTMA1

    MOSFET N-CH 600V 1.8A TO252-3
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    DigiKey SPD02N60S5BTMA1 Bulk 693
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    Infineon Technologies AG SPD02N60S5

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    Bristol Electronics SPD02N60S5 292
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    Quest Components SPD02N60S5 1,340
    • 1 $1.74
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    • 1000 $0.696
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    Infineon Technologies AG SPD02N60C3

    POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 600V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
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    Quest Components SPD02N60C3 1,190
    • 1 $2.792
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    ComSIT USA SPD02N60C3 445
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    SPD02N60 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPD02N60 Siemens Original PDF
    SPD02N60 Siemens SIPMO Power Transistor Original PDF
    SPD02N60 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD02N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A Original PDF
    SPD02N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60C3BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK Original PDF
    SPD02N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 3,000.0 mOhm; ID(max) @ TC=25°C: 1.8 A; IDpuls (max): 3.2 A; Original PDF
    SPD02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD02N60S5BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252 Original PDF

    SPD02N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SP*02N60

    Abstract: P-TO252 SPD02N60 SPU02N60
    Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified


    Original     		PDF SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252

    SPD02N60S5

    Abstract: 02N60S5 P-TO252 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5

    02N60S5

    Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5

    02N60C3

    Abstract: P-TO252 SPD02N60C3 SPU02N60C3
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3

    DD35

    Abstract: 02N60C3
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35

    02N60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

    02N60S5

    Abstract: 02N60 SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

    02N60S5

    Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252. PG-TO251. SPD02N60S5 Q67040-S4226 Q67040-S4213 02N60S5 smd 0306 package 02N60

    Untitled

    Abstract: No abstract text available
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5

    02N60c3

    Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60c3 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623

    02n60s5

    Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42

    02n60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5

    02N60

    Abstract: No abstract text available
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02N60

    02N6

    Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
    Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5

    02N60C3

    Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE

    02N60S5

    Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
    Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5

    02N6

    Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623
    Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623

    02n60s5

    Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5

    02N60C3

    Abstract: 02n60
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02n60

    SP*02N60

    Abstract: transistor smd hq
    Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252


    OCR Scan     		PDF SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A


    OCR Scan     		PDF SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2

    02N60S5

    Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
    Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5