thermafilm
Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
Text: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger
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AN1040/D
r14525
thermafilm
2088AB
thermasil
EB107/D
sync nut
eb107
ierc heatsink
richco Silicone Rubber 35 Shore A
thermafilm 1
mhw 592
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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P4855-1
Abstract: Ablestik Transistor Substitution 1993 2088AB belleville washer 33702 SIL-PAD density 208ab 2088a 814a
Text: Order this document by AN1040/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1040 MOUNTING CONSIDERATIONS FOR POWER SEMICONDUCTORS Prepared by: Bill Roehr Staff Consultant, Motorola Semiconductor Sector TABLE OF CONTENTS Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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AN1040/D
AN1040
P4855-1
Ablestik
Transistor Substitution 1993
2088AB
belleville washer
33702
SIL-PAD density
208ab
2088a
814a
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TRIAC zo 607 MA
Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’
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DL137/D
May-2000
r14525
TRIAC zo 607 MA
ZO 607 TRIAC
Westinghouse SCR handbook
tl-130 transformer
BRX49 equivalent
800w class d circuit diagram schematics
triac MAC 97 AB
triac MAC 97 A6
ZO 103 TRIAC
1N5760
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carrier chiller
Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
Text: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000 SCILLC, 2000 “All Rights Reserved’’
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Sep-2000
r14525
carrier chiller
BRIDGE RECTIFIER SMD
oscilloscopes manual
SOT-353 Mark va
ECL Handbook
smd diode Cathode is indicated by a blue band mar
TO-204aa MICROSEMI PACKAGE OUTLINE
Microsemi Catalog 2000
RCA 559 TO3
MECL System Design Handbook
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IXTH24N45
Abstract: No abstract text available
Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient
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0D003S5
IXTH24N45
IXTM24N45
IXTH24N50
IXTM24N50
O-204
O-247
IXTH24N50,
IXTM24N50,
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Diode SY 356
Abstract: DI 783
Text: I X Y S CORP IDE DI 4bflbS2b OGODBTS 3 | □IXYS 7 ^ 3 - r- a 7 ADVANCED TECHNICAL DATA SHEET* kTM MOSBLOC MAXIMUM RATIN G S DATASHEET NO. 41014A IGBT MODULE IXGQ 50N 90Y4 Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage
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1014A
Diode SY 356
DI 783
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Untitled
Abstract: No abstract text available
Text: I X Y S CORP 10E D | Mbfl taEb 0 0 0 0 3 T 7 7 | □IXYS ADVANCED TECHNICAL DATA SHEET* DATA SHEET NO. 41013A MOSBLOC IGBT MODULE IXGQ75N90Y4 MAXIMUM RATINGS T c = 25 °C unless otherwise indicated Conditions Rating Value Symbol Unit Collector-Emitter Voltage
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1013A
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Untitled
Abstract: No abstract text available
Text: I X Y S CORP n i x Y 10 E D I 4batrS2b 0000307 4 | S ADVANCED TECHNICAL DATA SHEET* .TM M O SBLO C DATA SH EET NO. 41007C IXGQ50N60Y4 IG BT M O D U L E MAXIMUM RATINGS Tc = 25 °C unless otherwise indicated Conditions Rating Symbol Value Unit Collector-Emitter Voltage
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41007C
IXGQ50N60Y4
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MT 1198 AE
Abstract: 4bob M5Y4
Text: I X Y S IDE CORP D | HbflbÈSb 00003ÔT fl ~ r- 3 s r ^ J IXYS ADVANCED TECHNICAL DATA SHEET* „TM MOSBLOC DATA SHEET NO. 41006C IGBT MODULE IXGQ75N60Y4 MAXIMUM RATINGS Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage Symbol
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41006C
IXGQ75N60Y4
MT 1198 AE
4bob
M5Y4
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15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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IRFG1Z3
Abstract: IRFF9132 IRFF9133 IRFF9211 IRFF9212 IRFF9221 TO213AA IRFG1Z0
Text: - 260 - m s tt f ñ 1- Vd s or Vd g % % ± £ Vg s fë CTa=Z5íG Pd Id * /CH 3 I gss min n A ) Vg s (V ) - 5 .5 25 ± 100 ± 20 -60 ± 2 0 -5. 5 25 ± 100 ± 20 P -200 ± 2 0 - 1 .6 15 ± 100 P -150 ± 2 0 -1. 6 IR P -200 ± 2 0 IR P -150 ± 2 0 % (V )
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IRFF9132
T0-205AF
IRFF9133
O-205AF
1RFF9210
T0-21QAC
IRFH350
T0-210AC
RFH450
IRFG1Z3
IRFF9211
IRFF9212
IRFF9221
TO213AA
IRFG1Z0
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IRFG1Z0
Abstract: irfh25 irfg9110 IRFH150
Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15
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O-258
IRFV360
IRFV460
O-258
IRFH150
IRFH250
IRFH350
IRFH450
O-210AC
IRFG110
IRFG1Z0
irfh25
irfg9110
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ixth20p25
Abstract: 20p25 ixtm20p25
Text: IDE I X Y S CORP D I 4 bûL>5 2 b O O O D a S 11] L, | _' p D I X Y S P-CHANNEL MOSFETS M A X IM U M R A T IN G S IXTH20P25 IXTM20P25 Parameter Sym. IXTH20P25 IXTM20P25 Unit* Drain-Source Voltage 1 Vd s s 250 Vdc Drain-Gate Voltage (R q s = 1-OMil) (1)
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ixth20p25
ixtm20p25
10Mfi)
Li22b
DOODaS11]
IXTH20P25
O-247
O-C04AA
00ESN0TINCLUOE
20p25
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mbab
Abstract: ixth17p25 ixtm17p25
Text: I ÎOE D 1 4bflhS2b GOODatiO 5 | X Y S CORP □ P-CHANNEL MOSFETS IX Y S IXTH17P25 IXTM17P25 ' M A X IM U M R A T IN G S P a ram eter Sym . IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 V Ds s 250 Vdc Drain-Gate Voltage (R q s = 1.0MÎ1) (1) Vdgr 250
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IXTH17P25
IXTM17P25
IXTH17P25
IXTM17P25
O-247
O-204
00ESN0TINCLUOE
mbab
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40N25
Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Text: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300
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IXTH40N25
IXTH40N30
IXTM40N25
IXTM40N30
40N25
f g megamos
SM 226 6V
megamos 46 08 09 6
megamos
1712 mosfet
LD 5161
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8051 servo motor interfacing
Abstract: rotary encoder signal conditioning 204AA 8051 microprocessor free Quadrature Encoder sampling rate 8051 internal structure incremental encoder Texas IXSE501
Text: l J U ‘f-’^ ^ ^ ^a^ÊSSÊBsKSÊÊiÊSÊÊÊKÊSâKKSÊÊÊÊÊBÎBBBBtlÊBÊSÊÊÊÊSÊ^ m i 005696 5 '4 % m m K ÈÊ l Ê Ê Im Ê Ê Ê Ê Ê IÊ Ê Ê Ê Ê Ê IB Ê Ê Ê Ê Ê Ê Ê m !ï X > ry IXSE501 Increm ental Shaft Encoder Peripheral Interface
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IXSE501
RS-422
20-pin
8051 servo motor interfacing
rotary encoder signal conditioning
204AA
8051 microprocessor free
Quadrature Encoder sampling rate
8051 internal structure
incremental encoder Texas
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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IXLD4429
Abstract: mosfet w1a CD 4081 Cmos 2 input and gate IC 1xys IXLD4425 TL494 IXLD1427 IXLD4424 mosfet gate 4081 IXLD427CPA
Text: □IXYS IXLD426/427/428 Dual Power MOSFET Driver • Low Power Latch Resistant CMOS • 30 ns Rise Time General Description Features The IX L D 4 2 6 /4 2 7 /4 2 8 are dual C M O S high speed drivers. A T T L /C M O S in p u t voltage level is tra n sla te d in to an o u tp u t
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IXLD426/427/428
t0-51>
IXLD4429
mosfet w1a
CD 4081 Cmos 2 input and gate IC
1xys
IXLD4425
TL494
IXLD1427
IXLD4424
mosfet gate 4081
IXLD427CPA
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50N15
Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet
Text: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 | I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S IXTH50N20, 15 IXTM50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 IXTH50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)
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IXTH50N15
IXTH50N20
IXTM50N15
IXTM50N20
00D3b5
IXTH50N20,
IXTM50N20,
50-200V,
50N15
TL 1074 CT
megamos 46 08 09 6
megamos 48
f g megamos
00D03
50N20
ID 48 Megamos
a 1712 mosfet
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f g megamos
Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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fit55t
Q000563
f g megamos
megamos 13
megamos
IXGE75N100Z
ID 48 Megamos
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MT 1198 AE
Abstract: No abstract text available
Text: I X Y S CÔRD ID E DIXYS ADVANCED TECHNICAL DATA SH EET* D | 4töt,?21n □ □ 0037ci S | DATA SHEET NO. 4I011B IXGQ50N50Y4 MOSBLOC IGBT MODULE MAXIMUM RATINGS Tc = 25 °C unless otherwise Indicated Unit Symbol Value Collector-Emitter Voltage VcES 500
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0037ci
4I011B
IXGQ50N50Y4
MT 1198 AE
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TO210AC
Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
Text: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C
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IXGN75N100
IXGN75N90
IXGN75N80
IXGN75N60
IXGN75N50
IXGM25N100A
IXGM20N100A
IXGM10N100A
IXGM25N90A
IXGM20N90A
TO210AC
TO-210AC
TO-238
IXGM40N50
IXGM40N50A
IXGM30N60
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