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    IXGM40N50A Search Results

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    IXGM40N50A Price and Stock

    IXYS Corporation IXGM40N50A

    TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IXGM40N50A 15
    • 1 $17.55
    • 10 $17.55
    • 100 $17.55
    • 1000 $17.55
    • 10000 $17.55
    		Buy Now
    IXGM40N50A 14
    • 1 $35.004
    • 10 $33.2538
    • 100 $33.2538
    • 1000 $33.2538
    • 10000 $33.2538
    		Buy Now

    IXGM40N50A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGM40N50A IXYS MegaMOS IGTs - Very High Power MOSIGTs Scan PDF
    IXGM40N50A IXYS Power MOSIGBTs Scan PDF

    IXGM40N50A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TO210AC

    Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
    Text: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C


    OCR Scan     		IXGN75N100 IXGN75N90 IXGN75N80 IXGN75N60 IXGN75N50 IXGM25N100A IXGM20N100A IXGM10N100A IXGM25N90A IXGM20N90A TO210AC TO-210AC TO-238 IXGM40N50 IXGM40N50A IXGM30N60 PDF

    40n50

    Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
    Text: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75


    OCR Scan     		50kHz 40n50 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60 PDF

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


    OCR Scan     		4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 PDF