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    IXGM25N100A Search Results

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    IXGM25N100A Price and Stock

    IXYS Corporation IXGM25N100A

    IGBT 1000V 50A 200W TO204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGM25N100A Tube
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    IXYS Integrated Circuits Division IXGM25N100A

    IGBT DIS.SINGLE 25A 1000V H.SPEED TO3(TO204AE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGM25N100A 13
    • 1 $5.92823
    • 10 $5.92823
    • 100 $5.3893
    • 1000 $5.3893
    • 10000 $5.3893
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    IXGM25N100A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGM25N100A IXYS 1000V, 50A diode Original PDF
    IXGM25N100A IXYS Power MOSIGBTs Scan PDF

    IXGM25N100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    TO210AC

    Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
    Text: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C


    OCR Scan     		PDF IXGN75N100 IXGN75N90 IXGN75N80 IXGN75N60 IXGN75N50 IXGM25N100A IXGM20N100A IXGM10N100A IXGM25N90A IXGM20N90A TO210AC TO-210AC TO-238 IXGM40N50 IXGM40N50A IXGM30N60

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


    OCR Scan     		PDF 4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C