2N5769
Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
Text: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)
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2N5769
PN2369
PN2369A
PN4275
PN5134
TN3725A
O-226
D44C8
O-220
D44H1
2N5769
MPS805
pN2369 national
2N3704
TN67
2n5306
2N4124
NPN 2N3391A
2N5210 national
tn3725a
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Small Signal Amplifiers
Abstract: Darlington pair
Text: Transistors USA / European specification models types [Leaded type] FTO-92 / NPN type General purpose small signal amplifiers General purpose amplification and switching Medium power amplification Darlington pair type 88 TO-92 package
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FTO-92
Small Signal Amplifiers
Darlington pair
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA13 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value
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MPSA13
100mA
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA29 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value
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MPSA29
100mA
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA14 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value
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MPSA14
100mA
100mA
100MHz
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MPSA13
Abstract: MPSA14 darlington transistor NPN
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA13, 14 Darlington TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE 0.625 PCM: W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage
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MPSA13,
MPSA14
MPSA13
100mA
100mA,
100MHz
MPSA13
MPSA14
darlington transistor NPN
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mpsa14
Abstract: No abstract text available
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic
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MPSA13
MPSA14
MIL-STD-202,
100mA,
100mA
100MHz
DS11111
mpsa14
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Darlington pair
Abstract: darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor
Text: Transistors USA / European specification models types [Leaded type] FTO-92 / NPN type General purpose small signal amplifiers General purpose amplification and switching Medium power amplification Darlington pair type 88 TO-92 package Transistors USA / European specification models types
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FTO-92
Darlington pair
darlington pair transistor
amplifier
TO92 package
darlington
Small Signal Amplifiers
npn darlington
darlington amplifiers
Darlington npn
darlington power transistor
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MPSA13
Abstract: MPSA14 MMBTA14 MMBTA13
Text: MPSA13 and MPSA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector TO-226AA (TO-92) Base 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for
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MPSA13
MPSA14
O-226AA
OT-23
MMBTA13
MMBTA14
20K/box
MPSA13
MPSA14
MMBTA14
MMBTA13
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BC337-25 PNP transistor download datasheet
Abstract: TRANSISTOR BC337-25 PNP 2N3906 Darlington transistor TRANSISTOR BC327-40 BC546B SOT23 transistor transistor bc548b BC338-40 BC556A NPN Transistor BC548B TRANSISTOR BC337-25
Text: Small-Signal Bipolar Transistors Package Thru-hole TO-92 VCEO 4 (Volt) 20 NPN TO-92 PNP Surface Mount SOT-23 SOT-23 NPN GS9012 500 64 202 2N4126 200 120 360 1V / 2mA 500 100 250 1V / 100mA BC818-25 BC808-25 500 160 400 1V / 100mA BC818-40 BC808-40 500 250
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OT-23
GS9013
GS9012
2N4124
2N4126
100mA
BC818-16
BC808-16
BC818-25
BC337-25 PNP transistor download datasheet
TRANSISTOR BC337-25 PNP
2N3906 Darlington transistor
TRANSISTOR BC327-40
BC546B SOT23 transistor
transistor bc548b
BC338-40
BC556A
NPN Transistor BC548B
TRANSISTOR BC337-25
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Transistor MPSA13
Abstract: mpsa14
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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MPSA13
MPSA14
MIL-STD-202,
100mA,
100mA
100MHz
300ms,
DS11111
Transistor MPSA13
mpsa14
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MPSA14
Abstract: MPSA13 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington
Text: MPSA13 and MPSA14 ct u d ro P New Darlington Transistors NPN Collector Base TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for switching and amplifier applications. • High collector current
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MPSA13
MPSA14
O-226AA
OT-23
MMBTA13
MMBTA14
MPSA13
MPSA14
MMBTA13
MMBTA14
current amplifier note darlington
MPSA13 darlington
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Untitled
Abstract: No abstract text available
Text: BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted
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BSR50
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BCX38B
Abstract: 10D3
Text: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-24 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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BCX38B
UL94V-0
BCX38B
10D3
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Untitled
Abstract: No abstract text available
Text: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at
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MPS-A13
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"Die No."
Abstract: No abstract text available
Text: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 60 V (min) at
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MPS-A28
MPS-A29
"Die No."
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transistor a13
Abstract: MARKING WL MPSA13 MPSA14
Text: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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MPSA13
MPSA14
MIL-STD-202,
MPSA14
100mA,
100mA
100MHz
transistor a13
MARKING WL
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Untitled
Abstract: No abstract text available
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,
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MPSA13
MPSA14
IL-STD-202,
100mA,
100mA
100MHz
300ns,
DS11111
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MPSA14
Abstract: MPSA13
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram
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MPSA13
MPSA14
MIL-STD-202,
MPSA14
100nA,
100mA,
100MHz
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NPN Transistor TO92 5V 200mA
Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K
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GES5305
2K-20K
200mA,
200MA
GES5306
/K-70K
GES5306A
7K-70K.
NPN Transistor TO92 5V 200mA
2N3877A
GES5307
GES6220
D38L1-3
GES5308
GES5308A
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MFW SOT23
Abstract: mfw transistor mfw 14 2SC1740 transistor sot23 mfw mfw sot-23 transistor 2sc1740
Text: Transistors • T ra nsisto rs. 50 I Digital Transistors Includes R esistors . 71 • NPN Transistors (TO-92). 50
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O-92S)
O-92L,
O-126,
O-126FP
2SC1740
MFW SOT23
mfw transistor
mfw 14
2SC1740 transistor
sot23 mfw
mfw sot-23
transistor 2sc1740
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100ria
Abstract: 25V6K RN5305 2N4494
Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V
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2N3707
MPS3707
2N3708
MPS3708
2N3709
MPS3709
2N3701
MPS3710
2N3711
MPS3711
100ria
25V6K
RN5305
2N4494
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40
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MPSA25
MPSA26
MPSA27
MPSA28
MPSA29
PN3640
PN3639
PN3569
PN3638A
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transistor D 13001
Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 00E75fifl 31D b'lE » APX 13001/ BC618 NPN D A R LIN G TO N TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. They can be used for general purpose low frequency applications and as relay drivers etc.
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00E75fifl
BC618
BC617
transistor D 13001
transistor x 13001
transistor s 13001
eb 13001 transistor
bc617
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