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    BCX38B Price and Stock

    Central Semiconductor Corp BCX38B TIN/LEAD

    Transistor Darlington NPN 60V 100nA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: BCX38B TIN/LEAD)
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    Avnet Americas BCX38B TIN/LEAD Box 5,000
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    Mouser Electronics BCX38B TIN/LEAD
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    Central Semiconductor Corp BCX38B PBFREE

    Transistor Darlington NPN 60V 100nA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: BCX38B PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BCX38B PBFREE Box 5,000
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    • 10000 $0.16898
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    Mouser Electronics BCX38B PBFREE
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    BCX38B Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCX38B Central Semiconductor Leaded Small Signal Transistor Darlington Original PDF
    BCX38B Continental Device India NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS Original PDF
    BCX38B Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS Original PDF
    BCX38B Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCX38B Ferranti Semiconductors E-Line Transistors 1977 Scan PDF
    BCX38B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BCX38B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BCX38B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCX38B Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCX38B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCX38B Zetex Semiconductors Super E-Line Transistors Scan PDF
    BCX38B Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    BCX38B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCX38B

    Abstract: 10D3
    Text: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-24 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3


    Original     		PDF BCX38B UL94V-0 BCX38B 10D3

    BCX38C

    Abstract: BCX38A BCX38B
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


    Original     		PDF QSC/L-000019 BCX38A BCX38B BCX38C C-120 BCX38ABCRev010602E BCX38C BCX38A BCX38B

    bcx38c

    Abstract: bcx38b BCX38A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


    Original     		PDF BCX38A BCX38B BCX38C C-120 BCX38ABCRev010602E bcx38c bcx38b BCX38A

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


    Original     		PDF BCX38A BCX38B BCX38C C-120 BCX38ABCRev010602E

    Untitled

    Abstract: No abstract text available
    Text: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3


    Original     		PDF BCX38B BCX38B UL94V-0

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original     		PDF

    bvc49

    Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)


    Original     		PDF 2S01111 2S01198A 2S0946A MPS6725 2SC3985 2S01661M 2S01521 92PU45A 2N6725 bvc49 TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    bcx38

    Abstract: BCX38C BCX38B Hammer
    Text: BCX38A BCX38B BCX38C NPN Silicon Planar Medium Power Darlington Transistors FEATURES • 1.5 W power dissipation • 0 .8 A continuous collector current • hFE up to 10,000 at lc = 500 mA • Fast switching DESCRIPTION The BCX38 series of silicon planar Darlington


    OCR Scan     		PDF BCX38A BCX38B BCX38C BCX38 BCX38A, BCX38B, BCX38C Hammer

    Untitled

    Abstract: No abstract text available
    Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc


    OCR Scan     		PDF 70S7fl 000bfl7fl ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-92 Case Continued TO-92 T Y P E NO. FAMILY LEAD CO DE VCBO vCEO ItPE v E B O tCB O v C B O (V) (V) TO-92-18R MIN *VCES MIN MIN (V) @ V CE (V) (V) e ic (mA) TO-92-18R V CE(S<fcT) ® *< (V) (mA) ’te e s MIN *CEV M AX Cob


    OCR Scan     		PDF O-92-18R 2N5812 2N5813 2NS816 2NS817 2N5818 2N5819 2N5822 2N5823

    2N3859

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )


    OCR Scan     		PDF

    MPSA42

    Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
    Text: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100


    OCR Scan     		PDF ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341

    BCX38C

    Abstract: darlington transistor MPSA14 BCX38A BCX38B MPSA12 MPSA13 MPSA14 ZTX360 100 amp npn darlington power transistors
    Text: DARLINGTON TABLE 8 - NPN SILICON DARLINGTON TRANSISTORS The devices shown in this table are designed for applications requiring very high current gain. The m onolithic construction has the inherent advantages o f fast sw itching times, low saturation voltages and lo w leakage current.


    OCR Scan     		PDF BCX38C BCX38B BCX38A MPSA1-25 MPSA14 MPSA13 MPSA12 ZTX360 darlington transistor MPSA14 MPSA12 100 amp npn darlington power transistors

    BC338C

    Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.


    OCR Scan     		PDF ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 MPSA55 ZTX750 ZTX550 BC327A BC327B BC338C ZTX452 MPSA06 MPSA56 ZTX651 ZTX652

    MPS3708

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TY P E NO. FAM ILY LEAD v CBO v CEO h FE v EBO >CBO 48 v CBO « v CE @ lc TO-92-18R V CE(S; VT) 'C C „b *T NF ‘ off CO D E (V ) (V ) •TO-92-18R MIN *V C ES MIN (V ) (nA) MIN *'C E V (V ) (V )


    OCR Scan     		PDF O-92-18R O-92-18R 2N5812 2N5813 2N5816 2N5817 2N5818 MPS3415 MPS3702 MPS3704 MPS3708 2N5819 2N5822 2N5823 2N5830

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


    OCR Scan     		PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    BC372P

    Abstract: ZTX849 ZTX601A ZTX851 ZTX853 ZTX855 ZTX857 ZTX858 ZTX869 ZTX955
    Text: SUPER E-LINE TABLE 3: HIGH CURRENT SUPER E-LINE TRANSISTORS Pd=1.2 Watts This range of devices is rated at 1.2 Watts and offers extremely low saturation voltages coupled with high continuous and pulsed current capability. Typical application areas to benefit from these products


    OCR Scan     		PDF ZTX858* ZTX857 ZTX855 BCX38C FXT38C 2N6725 2N6724 ZTX705 FXT705 ZTX704 BC372P ZTX849 ZTX601A ZTX851 ZTX853 ZTX858 ZTX869 ZTX955