MPS8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8050. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V VEBO -6 V Collector Current
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MPS8550
MPS8050.
MPS8050
MPS8550
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8050. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO
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MPS8550
MPS8050.
625mW
400mW
-100mA
-800mA
-800mA,
-80mA
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MPS8050
Abstract: CBVK741B019 F63TNR PN2222N
Text: MPS8050 MPS8050 C B TO-92 E NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPS8050
MPS8050
CBVK741B019
F63TNR
PN2222N
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mps8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8550. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V VEBO 6 V Collector Current
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MPS8050
MPS8550.
mps8050
MPS8550
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semiconductor mps 8050 d
Abstract: MPS 8050 D MPS 8050 B K MPS 8050 hFE 8050 K MPS 8050 c C 8050 d kmps8050 K MPS 8050 d Korea Electronics
Text: SEMICONDUCTOR MPS8050 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8050 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8050 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.
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MPS8050
semiconductor mps 8050 d
MPS 8050 D
MPS 8050 B
K MPS 8050
hFE 8050
K MPS 8050 c
C 8050 d
kmps8050
K MPS 8050 d
Korea Electronics
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mps8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8550. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V H
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MPS8050
MPS8550.
100mA
800mA
800mA,
mps8050
MPS8550
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2009. 6. 10 Revision No : 2 1/2
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MPS8050S
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mps8050
Abstract: No abstract text available
Text: MPS8050 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MPS8050
mps8050
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B FEATURE C A ・Complementary to MPS8050. N K MAXIMUM RATING Ta=25℃ E G RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage
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MPS8050.
MPS8550
625mW
400mW
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MPS8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V
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MPS8550
MPS8050.
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
MPS8050
MPS8550
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MPS8050S
Abstract: MPS8550S
Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8550S. L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5
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MPS8050S
MPS8550S.
MPS8050S
MPS8550S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L D L ・Complementary to MPS8550S. H MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage
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MPS8050S
MPS8550S.
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MPS8550S
Abstract: MPS8050S
Text: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L L D ・Complementary to MPS8050S. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage
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MPS8550S
MPS8050S.
MPS8550S
MPS8050S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8550. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO
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MPS8050
MPS8550.
625mW
400mW
100mA
800mA
800mA,
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Untitled
Abstract: No abstract text available
Text: MPS8050 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MPS8050
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MPS8050
Abstract: MPS8050C
Text: MPS8050 MPS8050 C B TO-92 E NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPS8050
MPS8050
MPS8050C
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MPS8050S
Abstract: MPS8550S
Text: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8050S. L SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V IC
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MPS8550S
MPS8050S.
MPS8050S
MPS8550S
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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mps8050
Abstract: B5G1 MPS805 DM07S
Text: MPS8050 _ National Discrete POW ER & Signal Technologies S em icon ducto r" MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings*
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MPS8050
Lj50113G
DM07S0
mps8050
B5G1
MPS805
DM07S
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MPS8550
Abstract: MPS8050
Text: SEMICONDUCTOR TECHNICAL DATA MPS8550 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8050. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage VCEO
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MPS8550
MPS8050.
-30-100-300-1K
MPS8550
MPS8050
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Untitled
Abstract: No abstract text available
Text: MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value
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MPS8050
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s 8050
Abstract: No abstract text available
Text: S E M IC O N D U C T O R ^ MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum RatiriQS Symbol T A = 2 5 0C unless o th e rw ise noted
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MPS8050
s 8050
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SC-10-100
Abstract: MPS8050C MPS8050 ps8050
Text: Discrete POWER & Signal Technologies s s M : n o w o „, r r a f ï MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Msximum RdtinÇjS
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MPS8050
SC-10-100
MPS8050C
MPS8050
ps8050
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MPS8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Em itter-B ase Voltage
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MPS8050
MPS8550.
MPS8050
MPS8550
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