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    TO-262-3 PACKAGE INFINEON Search Results

    TO-262-3 PACKAGE INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO-262-3 PACKAGE INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Text: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		PDF FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package

    086n10n

    Abstract: 082N10N 083N10N 086N10 IPP086N10N3 IPD082N10N3 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 PG-TO220-3 PG-TO262-3 086n10n 082N10N 083N10N 086N10 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		PDF IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3

    086N10N

    Abstract: 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086N10N 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G

    086n10n

    Abstract: IPD082N10N3 G
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO 252) 8.2 mW ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086n10n IPD082N10N3 G

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10

    086n10n

    Abstract: 082N10N 083N10N IPD082N10N3 086N10 IEC61249-2-21 IPP086N10N3 PG-TO220-3 V6150 IPP086N10N3 G
    Text: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086n10n 082N10N 083N10N 086N10 IEC61249-2-21 PG-TO220-3 V6150 IPP086N10N3 G

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original     		PDF IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3

    opto 721

    Abstract: 690B 690ABT 690BT SFH690A SFH690ABT SFH690AT SFH690BT Optocoupler 721
    Text: SFH690AT/690BT/690ABT Phototransistor Optocoupler Miniflat SOP Package FFEATURES • Current Transfer Ratios – SFH690AT, 50%–150% – SFH690BT, 100%–300% – SFH690ABT, 50%–300% • SOP Small Outline Package • Isolation Test Voltage, 3750 VRMS (1.0 s)


    Original     		PDF SFH690AT/690BT/690ABT SFH690AT, SFH690BT, SFH690ABT, 07ypical 1-888-Infineon opto 721 690B 690ABT 690BT SFH690A SFH690ABT SFH690AT SFH690BT Optocoupler 721

    DDR200

    Abstract: DDR266 DDR333 DDR400 WED3EG7232S-JD3 256mb ddr333 200 pin T26Z
    Text: WED3EG7232S-JD3 PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR


    Original     		PDF WED3EG7232S-JD3 256MB 32Mx72 WED3EG7232S 256Mb 32Mx8 DDR200, DDR266, DDR333 DDR200 DDR266 DDR400 WED3EG7232S-JD3 256mb ddr333 200 pin T26Z

    Untitled

    Abstract: No abstract text available
    Text: WED3EG7232S-JD3 White Electronic PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR


    Original     		PDF WED3EG7232S-JD3 256MB 32Mx72 DDR200, DDR266, DDR333 DDR400 166MHz) 200MHz) 400HMz

    MARKING QG 6 PIN

    Abstract: p-channel 200V BSP317P L6327 VPS05163
    Text: BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P P-SOT-223


    Original     		PDF PG-SOT-223 P-SOT-223 L6327: VPS05163 BSP317P MARKING QG 6 PIN p-channel 200V BSP317P L6327 VPS05163

    BSP317P

    Abstract: VPS05163 Q67042-S4167
    Text: BSP 317 P Preliminary data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P SOT-223


    Original     		PDF OT-223 Q67042-S4167 VPS05163 BSP317P 55/15y BSP317P VPS05163 Q67042-S4167

    317P1

    Abstract: 043a
    Text: BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P SOT-223 Ordering Code


    Original     		PDF VPS05163 OT-223 Q67042-S4167 BSP317P -200V, -200A/ 317P1 043a

    K 317

    Abstract: MARKING QG 6 PIN p-channel 200V smd diode 39a VPS05163 BSP317P E6327 L6327 317P1 317 6 pin information
    Text: BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P P-SOT-223


    Original     		PDF PG-SOT-223 P-SOT-223 E6327 BSP317P L6327 VPS05163 55/150/angerous K 317 MARKING QG 6 PIN p-channel 200V smd diode 39a VPS05163 BSP317P E6327 L6327 317P1 317 6 pin information

    08CNE8N

    Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
    Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3 D475A C3175

    08cn10n

    Abstract: IPB08CN10N G IPP08CN10N to262 pcb footprint PG-TO220-3 JESD22
    Text: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08cn10n IPB08CN10N G to262 pcb footprint PG-TO220-3 JESD22

    08CN10N

    Abstract: No abstract text available
    Text: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 08CN10N PG-TO262-3 08CN10N

    08cn10n

    Abstract: IPP08CN10N JESD22 PG-TO220-3
    Text: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08cn10n JESD22 PG-TO220-3

    08CN10N

    Abstract: No abstract text available
    Text: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 08CN10N PG-TO262-3 08CN10N

    08CN10N

    Abstract: IPP08CN10N JESD22 PG-TO220-3 08CN10 08cn
    Text: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		PDF IPB08CN10N IPI08CN10N IPP08CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CN10N 08CN10N JESD22 PG-TO220-3 08CN10 08cn

    a7x transistor

    Abstract: diode t25 4 F0
    Text: 6N135 6N136 Infineon :hno I High-Speed TRIOS Optocoupler FEA TU R ES Isolation Test Voltage: 530 0 V RMS T T L C om patible H igh Bit R ates: 1.0 M bit/s H igh C om m o n -M o d e In terfe re n c e Im m unity B an dw idth 2 .0 M H z O p en -C o lle c to r O u tput


    OCR Scan     		PDF 6N135 6N136 1-888-lnfineon 6N135/136 a7x transistor diode t25 4 F0

    4456-P

    Abstract: No abstract text available
    Text: In fineon ♦s*î hno!09 CGB 91 GaAs MMIC Target Data Sheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit • Power down control • CMOS- switchable high/low-power mode


    OCR Scan     		PDF P-VQFN-24-3 4456-P