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    045N1 Search Results

    045N1 Result Highlights (1)

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    TW045N120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
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    045N1 Price and Stock

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    Pulse Electronics Corporation BSPQ000603045N1H00

    FIXED IND 5.1NH 400MA 250MOHM SM
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    DigiKey BSPQ000603045N1H00 Cut Tape 14,695 1
    • 1 $0.1
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    • 100 $0.0654
    • 1000 $0.05381
    • 10000 $0.04693
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    BSPQ000603045N1H00 Digi-Reel 14,695 1
    • 1 $0.12
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    • 100 $0.0753
    • 1000 $0.05851
    • 10000 $0.05289
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    Avnet Americas BSPQ000603045N1H00 Reel 15,000
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    Mouser Electronics BSPQ000603045N1H00 14,735
    • 1 $0.12
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    • 100 $0.046
    • 1000 $0.032
    • 10000 $0.027
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    Newark BSPQ000603045N1H00 Cut Tape 15,000 1
    • 1 $0.125
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    • 100 $0.042
    • 1000 $0.032
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    Sager BSPQ000603045N1H00 15,000
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    Goford Semiconductor GT045N10D5

    MOSFET N-CH 100V 120A DFN5*6-8L
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    DigiKey GT045N10D5 Digi-Reel 4,517 1
    • 1 $2.66
    • 10 $1.713
    • 100 $1.1754
    • 1000 $0.87157
    • 10000 $0.80945
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    GT045N10D5 Cut Tape 4,517 1
    • 1 $2.66
    • 10 $1.713
    • 100 $1.1754
    • 1000 $0.87157
    • 10000 $0.80945
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    UMW IPP045N10N3G

    MOSFET N-CH 100V 100A TO220
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    DigiKey IPP045N10N3G Tube 1,000 1
    • 1 $2.99
    • 10 $1.94
    • 100 $1.3402
    • 1000 $1.00163
    • 10000 $0.9125
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    UMW FDP045N10A

    MOSFET N-CH 100V 120A TO220
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    DigiKey FDP045N10A Tube 982 1
    • 1 $2.53
    • 10 $1.628
    • 100 $1.1142
    • 1000 $0.82363
    • 10000 $0.725
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    Infineon Technologies AG IPP045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO220-3
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    DigiKey IPP045N10N3GXKSA1 Tube 964 1
    • 1 $2.01
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    • 100 $1.0761
    • 1000 $1.02938
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    Avnet Americas IPP045N10N3GXKSA1 Bulk 16 Weeks, 4 Days 1
    • 1 $2.64
    • 10 $2.59
    • 100 $1.57
    • 1000 $1.42
    • 10000 $1.42
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    IPP045N10N3GXKSA1 Tube 16 Weeks 500
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    • 10000 $0.7968
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    Mouser Electronics IPP045N10N3GXKSA1 4,783
    • 1 $1.76
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    • 100 $1.13
    • 1000 $1.06
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    Newark IPP045N10N3GXKSA1 Bulk 1,152 1
    • 1 $2.05
    • 10 $2.04
    • 100 $1.38
    • 1000 $1.06
    • 10000 $1.05
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    TME IPP045N10N3GXKSA1 4 1
    • 1 $2.3
    • 10 $1.82
    • 100 $1.58
    • 1000 $1.47
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    Rutronik IPP045N10N3GXKSA1 Tube 5,800 50
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    • 100 $1.17
    • 1000 $0.8992
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    Chip One Stop IPP045N10N3GXKSA1 Tube 407 0 Weeks, 1 Days 1
    • 1 $1.15
    • 10 $1.15
    • 100 $1.13
    • 1000 $1.13
    • 10000 $1.13
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    EBV Elektronik IPP045N10N3GXKSA1 3,000 17 Weeks 500
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    IBS Electronics IPP045N10N3GXKSA1 4,000 500
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    New Advantage Corporation IPP045N10N3GXKSA1 2,500 1
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    • 1000 $1.6
    • 10000 $1.48
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    Vyrian IPP045N10N3GXKSA1 2,367
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    Win Source Electronics IPP045N10N3GXKSA1 90,400
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    • 100 $1.3624
    • 1000 $1.107
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    045N1 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    IPA045N10N3

    Abstract: THV-150
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Text: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Text: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF