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    086N10 Price and Stock

    Infineon Technologies AG IPA086N10N3GXKSA1

    MOSFET N-CH 100V 45A TO220-FP
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    DigiKey IPA086N10N3GXKSA1 Tube 2,816 1
    • 1 $2.53
    • 10 $2.53
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    • 10000 $0.76175
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    IPA086N10N3GXKSA1 Bulk 18 Weeks, 3 Days 1
    • 1 $2.04
    • 10 $1.72
    • 100 $1.4
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    IPA086N10N3GXKSA1 Tube 18 Weeks 500
    • 1 $0.80025
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    Newark IPA086N10N3GXKSA1 Bulk 24 1
    • 1 $0.542
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    Bristol Electronics IPA086N10N3GXKSA1 33 3
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    • 100 $1.2188
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    Rochester Electronics IPA086N10N3GXKSA1 100 1
    • 1 $0.8887
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    • 100 $0.8354
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    TME IPA086N10N3GXKSA1 76 1
    • 1 $1.83
    • 10 $1.34
    • 100 $1.08
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    Chip1Stop IPA086N10N3GXKSA1 Tube 2,920
    • 1 $0.621
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    IPA086N10N3GXKSA1 979
    • 1 $4.33
    • 10 $1.36
    • 100 $1.04
    • 1000 $0.751
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    IPA086N10N3GXKSA1 480
    • 1 $0.923
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    EBV Elektronik IPA086N10N3GXKSA1 17 Weeks 500
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    Infineon Technologies AG IPI086N10N3GXKSA1

    MOSFET N-CH 100V 80A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI086N10N3GXKSA1 Tube 250 1
    • 1 $2.36
    • 10 $2.36
    • 100 $2.36
    • 1000 $0.76572
    • 10000 $0.69262
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    Newark IPI086N10N3GXKSA1 Bulk 1
    • 1 $1.72
    • 10 $1.42
    • 100 $1.13
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    TME IPI086N10N3GXKSA1 1
    • 1 $1.6
    • 10 $1.13
    • 100 $0.95
    • 1000 $0.75
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    Chip1Stop IPI086N10N3GXKSA1 Tube 700
    • 1 $1.88
    • 10 $1.38
    • 100 $0.83
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    IPI086N10N3GXKSA1 300
    • 1 $3.86
    • 10 $1.22
    • 100 $0.928
    • 1000 $0.669
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    EBV Elektronik IPI086N10N3GXKSA1 17 Weeks 500
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    Infineon Technologies AG IPP086N10N3GHKSA1

    MOSFET N-CH 100V 80A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP086N10N3GHKSA1 Tube 500
    • 1 -
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    • 1000 $0.93652
    • 10000 $0.93652
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    Avnet Americas IPP086N10N3GHKSA1 Tube 4 Weeks 1
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    Rochester Electronics IPP086N10N3GHKSA1 150 1
    • 1 $0.5688
    • 10 $0.5688
    • 100 $0.5347
    • 1000 $0.4835
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    Infineon Technologies AG IPP086N10N3GXKSA1

    MOSFET N-CH 100V 80A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP086N10N3GXKSA1 Tube 500
    • 1 -
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    • 1000 $0.88216
    • 10000 $0.88216
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    Avnet Americas IPP086N10N3GXKSA1 Tube 4 Weeks 1
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    Newark IPP086N10N3GXKSA1 Bulk 1,206 1
    • 1 $2.34
    • 10 $2.12
    • 100 $1.73
    • 1000 $1.23
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    Rochester Electronics IPP086N10N3GXKSA1 350 1
    • 1 $0.8667
    • 10 $0.8667
    • 100 $0.8147
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    TME IPP086N10N3GXKSA1 1
    • 1 $1.37
    • 10 $1.09
    • 100 $0.91
    • 1000 $0.84
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    Chip1Stop IPP086N10N3GXKSA1 Tube 444
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    • 10 $1.26
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    IPP086N10N3GXKSA1 50
    • 1 $4.22
    • 10 $1.33
    • 100 $1.2
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    IPP086N10N3GXKSA1 25
    • 1 $4.09
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    EBV Elektronik IPP086N10N3GXKSA1 17 Weeks 500
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    Infineon Technologies AG IPI086N10N3GXK

    Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1)
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    Avnet Americas IPI086N10N3GXK Tube 18 Weeks 550
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    Find more 086N10 price and stock on Findchips.com

    086N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    086n10n

    Abstract: 082N10N 083N10N IPD082N10N3 086N10 IEC61249-2-21 IPP086N10N3 PG-TO220-3 V6150 IPP086N10N3 G
    Text: OptiMOS 3 Power-Transistor 086N10N3 G 086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086n10n 082N10N 083N10N 086N10 IEC61249-2-21 PG-TO220-3 V6150 IPP086N10N3 G

    086n10n

    Abstract: 082N10N 083N10N 086N10 IPP086N10N3 IPD082N10N3 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking
    Text: OptiMOS 3 Power-Transistor 086N10N3 G 086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 PG-TO220-3 PG-TO262-3 086n10n 082N10N 083N10N 086N10 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking

    086N10P

    Abstract: KU086N10P Mos fet 086N10P
    Text: SEMICONDUCTOR 086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description 086N10P A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		PDF KU086N10P/F KU086N10P Fig16. Fig17. Fig18. 086N10P KU086N10P Mos fet 086N10P

    086n10n

    Abstract: 086N10 c245t PG-TO220-FP JESD22 MARKING d45 DD-50 PG-TO220FP
    Text: 086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 8.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPA086N10N3 PG-TO220-FP 086N10N 086n10n 086N10 c245t PG-TO220-FP JESD22 MARKING d45 DD-50 PG-TO220FP

    PG-TO220FP

    Abstract: PG-TO220-FP
    Text: 086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 8.6 mW ID 45 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		PDF IPA086N10N3 IEC61249-2-21 PG-TO220-FP 086N10N PG-TO220FP PG-TO220-FP

    086N10N

    Abstract: 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G
    Text: OptiMOS 3 Power-Transistor 086N10N3 G 086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086N10N 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G

    086n10n

    Abstract: IPD082N10N3 G
    Text: OptiMOS 3 Power-Transistor 086N10N3 G 086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO 252) 8.2 mW ID 80 A • Very low on-resistance R DS(on)


    Original     		PDF IPP086N10N3 IPB083N10N3 IPI086N10N3 IPD082N10N3 IEC61249-2-21 PG-TO220-3 086n10n IPD082N10N3 G