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    TO-205AF PACKAGE Search Results

    TO-205AF PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO-205AF PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-205AF Package Intersil 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE Original PDF

    TO-205AF PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan     		FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package PDF

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264 PDF

    TO205AF

    Abstract: No abstract text available
    Text: TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A SEATING PLANE h L Øb e e1 2 e2 1 90o 3 45o j k MIN MILLIMETERS MAX MIN MAX NOTES A 0.16 0.180 4.07 4.57 - Øb 0.01 0.021 0.41 0.53 2, 3 ØD 0.34 0.370 8.64 9.39 - ØD1 0.31


    Original     		O-205AF O-205AF 254mm) TO205AF PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Packages TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A h SEATING PLANE L Øb e e1 2 e2 1 90o 3 45o j k MIN MILLIMETERS MAX MIN MAX NOTES A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.350 0.370 8.89


    Original     		O-205AF O-205AF 254mm) PDF

    TO-205AF Package

    Abstract: No abstract text available
    Text: Power Packages TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A SEATING PLANE h L Øb e e1 2 e2 1 90o 3 45o j k 19 MIN MILLIMETERS MAX MIN MAX NOTES A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.340 0.370


    Original     		O-205AF O-205AF 254mm) TO-205AF Package PDF

    l9130h

    Abstract: No abstract text available
    Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL9130D, FRL9130R, FRL9130H -100V, O-205AF 550S1 100KRAD 300KRAD 1000KRAD l9130h PDF

    PLN 2032

    Abstract: TO-226A to-237
    Text: TELEDYNE COMPONENTS aaE j> o aii?t.Qa ûüab44i a T-31-25 SD3300, SD3301 SE M IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD33Q0CHP SD3301CHP TO-205AF TO-39 Hermetic Package SD3300Ht> SD3301HB TO-226AA (TO-92) Plastic Package


    OCR Scan     		ab44i O-205AF O-226AA O-237 SD33Q0CHP SD3300Ht> SD3300BD SD33Q SD3301CHP SD3301HB PLN 2032 TO-226A to-237 PDF

    Untitled

    Abstract: No abstract text available
    Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL130D, FRL130R, FRL130H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    TA17415

    Abstract: IRFF430 TB334
    Text: IRFF430 Data Sheet March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 2.75A, 500V Formerly developmental type TA17415. Ordering Information IRFF430 PACKAGE TO-205AF 1894.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRFF430 TA17415. O-205AF TA17415 IRFF430 TB334 PDF

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRFF330 TA17414. O-205AF IRFF330 TA17414 TB334 PDF

    FRL9130R

    Abstract: 2E12 FRL9130D FRL9130H
    Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL9130D, FRL9130R, FRL9130H -100V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD FRL9130R 2E12 FRL9130D FRL9130H PDF

    Untitled

    Abstract: No abstract text available
    Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL9130D, FRL9130R, FRL9130H -100V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    BLUECORE4 rom

    Abstract: SD204 SD204CHP SD204HD SD205 SD205CHP SD205HD
    Text: TOPAZ SEMICO NDU CT OR DSE D | TOÖSSEt, 0Q01GD3 L | ITü^lJ^ÆÉ^ $0204,_ SBim SEMICONDUCTOR N-CHANNEL ENHÂNCI^iNM'JODE D-MOS POWER FETs ORDERING INFORMATION SD204CHP SD204HD 6.0 ohm, 25V Sorted Chips in Waffle Pack TO-205AF TO-39 Package Description


    OCR Scan     		SD204CHP SD205CHP O-205AF SD204HD SD205HD 80fiSEC BLUECORE4 rom SD204 SD205 SD205CHP SD205HD PDF

    Untitled

    Abstract: No abstract text available
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    FRL9130R

    Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
    Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL9130D, FRL9130R, FRL9130H -100V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD FRL9130R 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET PDF

    2E12

    Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET PDF

    2E12

    Abstract: FRL230D FRL230H FRL230R 1E14
    Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL230D, FRL230R, FRL230H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRL230D FRL230H FRL230R 1E14 PDF

    N-channel enhancement 200V 60A

    Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD N-channel enhancement 200V 60A TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R PDF

    pj 939 diode

    Abstract: TO-205A AN-8831 VDMOS reliability testing report Rad hard for Harris
    Text: Semiconductor FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550£2 TO-205AF • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL9130D, FRL9130R, FRL9130H -100V, 100KRAD 300KRAD 1000KRAD 3000KRAD T0-205AF pj 939 diode TO-205A AN-8831 VDMOS reliability testing report Rad hard for Harris PDF

    SD3301

    Abstract: SD3301HD SD3304 SD33 SD3300AD SD3300BD SD3300CHP SD3300HD SD3301AD SD3301CHP
    Text: TOP AZ SEMICONDUCTOR OSE D g ‘iOÖSESb OQOlObM 4 | T-31-25 S D 3 S G 0 , § 0 3 3 0 1 SEMICONDUCTOR N-CHANNEL ENHÂMCIMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD3301CHP SD33Û0CHP Sorted Chips in Waffle Pack TO-205AF TO-39 Hermetic Package ' SD3300HD


    OCR Scan     		T-31-25 D-IV30S SD3300CHP SD3301CHP O-205AF SD3300HD SD3301HD O-226AA SD3300BD O-237 SD3301 SD3301HD SD3304 SD33 SD3300AD SD3301AD SD3301CHP PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also


    Original     		2N6849U MIL-PRF-19500/564 2N6849U O-205AF 2N6849 MIL-PRF-19500/564. T4-LDS-0009-1, PDF

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6849 2N6849 JANTX u18 transistor
    Text: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also


    Original     		2N6849U MIL-PRF-19500/564 2N6849U O-205AF 2N6849 MIL-PRF-19500/564. T4-LDS-0009-1, DD 127 D TRANSISTOR transistor DD 127 D 2N6849 JANTX u18 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    JANTX2N6845

    Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845
    Text: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International


    Original     		90552C IRFF9120 JANTX2N6845 JANTXV2N6845 MIL-PRF-19500/563 O-205AF) -100V paramete252-7105 JANTX2N6845 diode 50v 40A ir IRFF9120 JANTXV2N6845 PDF