TIP 50 TRANSISTOR Search Results

TIP 50 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TIP 50 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TIP 152 transistor Abstract: transistor tip 46 Text: ~ LA-A 1 Series LAE66AICB w/TIP-29C TO-220 TRANSISTOR -, GllOfI/AI"- DESCRIPTION OF CURVES ~100 1z 90 80 B. N.C. Horiz. & Vert. With Dissipator. 70 ". 200 FPM w/Diss. 60 D. 500 FPM w/Diss. E. 1000 FPM w/Diss. 50 w ~ 0= ~ ~ w 1W cn < () ~, A. N.C. Horiz. Device	Original	LAE66AICB w/TIP-29C O-220) LAE66AlCB LAE66AIB O-126, O-220 LAE66AIU LAE66Al LAE66A2U TIP 152 transistor transistor tip 46	PDF
3055 5C pnp transistor Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055 Text: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •	OCR Scan	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 25-mJ TIP110 TIP111 3055 5C pnp transistor tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055	PDF
tip 420 transistor Abstract: tip 222 transistor transistor tip 420 Equivalent of transistor tip 420 UP-420-B t01a UP-420 dissipator TIP-29C UP-000-CB Text: SECTION 2 HEATDISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS UP2 Dual Mount Series $ UP2-T0127-2CB w/ 2 TIP-29C (TO-220) TRANSISTORS -! n o ir 100 90 j; / 70 50 / 20 10 t* / / / 40 'Sy / I 50 30 A. N.C. Horiz. Device Only M ounted to G-10. B. N.C. Horiz. & Vert.	OCR Scan	UP2T0127-2CB TIP-29C O-220) H52Vt UP-000-U UP-000-CB UP-000-B UP-000 UP-T0126-U UP-T0126-CB tip 420 transistor tip 222 transistor transistor tip 420 Equivalent of transistor tip 420 UP-420-B t01a UP-420 dissipator TIP-29C	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR MJD47/50 HIGH VOLTAGE AND HIGH RELIABILITY DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Form ed for Surface M ount Application No Suffix • Straight Lead (I.PACK, 1” Suffix) • E lectrically S im ila r to Popular TIP 47 and TIP50	OCR Scan	MJD47/50 TIP50 MJD47 MJD50	PDF
Untitled Abstract: No abstract text available Text: KSH47/50 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface M ount Application No Suffix • Straight Lead (I.PACK, 1” Suffix) • E lectrically S im ila r to Popular TIP 47 and TIP50	OCR Scan	KSH47/50 TIP50 KSH47 KSH50	PDF
MJD50 Abstract: MJD47 TIP50 TIP47 0J52 Text: NPN EPITAXIAL SILICON TRANSISTOR MJD47/50 HIGH VOLTAGE AND HIGH RELIABILITY DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Form ed for Surface M ount Application No Suffix • Straight Lead (I.PACK, I” Suffix) • Electrically S im ila r to Popular TIP 47 and TIP50	OCR Scan	MJD47/50 TIP47 TIP50 MJD47 MJD50 MJD50 TIP50 0J52	PDF
TIP111 Abstract: No abstract text available Text: TYPES TIP110, TIPTI1, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP115,TIP116,TIP 117 •' CD CO c 5 r » High S O i Capability, 40 V and 1.25 A • 50 W at 25°C Case Temperature • Min hFE of 500 at 4 V, 2 A	OCR Scan	TIP110, TIP112 TIP115 TIP116 25-mJ TIP111	PDF
Untitled Abstract: No abstract text available Text: PA2 Series l/ A ' 90 j 80 70 60 1 / i 30 20 10 i/ / / / / z > 40 / / h 50 c A 7 / / / / - -T . , .••"T"“ . B 1 100 .'l' j PA2-1U W/TIP-29C TO-220 TRANSISTOR ilo / D E S C R IP T IO N O F CURVES A . N .C. H o rii.D e v ice O n ly M ounted to G-10.	OCR Scan	/TIP-29C O-220) T0-126, T0-220 T0-127 O-220	PDF
B0738 Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073 Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m	OCR Scan	BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073	PDF
BD633 Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120 Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.	OCR Scan	BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120	PDF
B0638 Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302 Text: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri \| i * t ^ 0.05 thick Base' j i g	OCR Scan	BD634, BD636, BD638 BD633, BD635, BD637 BD634 BD636 B0638 BD638 TIP 122 100 V B0738 BD637 tip 42 darlington complementary power amplifier tip 142 73 5302	PDF
Bow94c Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80	OCR Scan	BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a	PDF
TIP42C EQUIVALENT Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122 Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C	OCR Scan	TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122	PDF
TIP 41 transistor Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147 Text: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C	OCR Scan	TIP36, TIP36A, TIP36B, TIP36C TIP35, TIP35A, TIP35B, TIP35C TIP36 TIP36A TIP 41 transistor tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147	PDF

3055t Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771 Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W\| 3 3 3 3 3 80 80 90 100 115	OCR Scan	2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771	PDF
tip 222 TRANSISTOR Abstract: TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120 Text: TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR CO M PLEM EN TARY USE WITH TIP120, TIP121, TIP122 • 65 W at 25° C Case T emperature M in h F E o f 1000 at 3 V , 3 A • 5 A Rated Collector Current 50 mJ Reverse Energy Rating	OCR Scan	TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 TIP125 TIP126 tip 222 TRANSISTOR TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120	PDF
bdx340 Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2 Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60	OCR Scan	2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2	PDF
2n3055 Abstract: bd 3055 Text: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B	OCR Scan	O-220 T0-220 2n3055 bd 3055	PDF
2N5000 Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148 Text: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias	OCR Scan	2N4998, 2N5000, 2N5148, 2N5150 2N4999, 2N5001, 2N5147, 2N5149 2N5000 circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148	PDF
T1P147 Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141 Text: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating	OCR Scan	TIP145, TIP146, TIP147 TIP140, TIP141, TIP142 TIP145 T1P146 T1P147 T1P147 TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 3055 5c pnp TIP141	PDF
TIP41C EQUIVALENT Abstract: tip 147 TRANSISTOR equivalent TIP418 TIP 122 transistor TIP 41 transistor tip 127 TRANSISTOR equivalent TIP41A equivalent tip 147 TRANSISTOR tip 141 equivalent tlp418 Text: T Y P ES TIP41, TIP41A, TIP41B, TIP41C N -P -l SIN GLE-D IFFU SED M ESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R AN D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E WITH T IP 4 2 , T IP 4 2 A , TIP 4 2 B , T IP 42C	OCR Scan	TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP41C EQUIVALENT tip 147 TRANSISTOR equivalent TIP418 TIP 122 transistor TIP 41 transistor tip 127 TRANSISTOR equivalent TIP41A equivalent tip 147 TRANSISTOR tip 141 equivalent tlp418	PDF
TIP 110 transistor Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055 Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature	OCR Scan	2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055	PDF
Bow94c Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222 Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80	OCR Scan	BUZ11 SGSP492 MTP3055A IRFP153 IRFP151 BUZ11S2 Bow94c Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222	PDF
Bow94c Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80	OCR Scan	IRFZ20FI BUZ10 STLT29* BUZ11A SGSP382 SGSP482 BUZ11 BUZ11FI IRFZ42 SGSP492 Bow94c MTP3055A IRFZ22 mosfet b0334 SGSP222 STVHD90 SGS137 SGSD93G	PDF

TIP 50 TRANSISTOR Search Results

TIP 50 TRANSISTOR Result Highlights (5)

TIP 50 TRANSISTOR Datasheets Context Search

TIP 152 transistor

3055 5C pnp transistor

tip 420 transistor

Untitled

Untitled

MJD50

TIP111

Untitled

B0738

BD633

B0638

Bow94c

TIP42C EQUIVALENT

TIP 41 transistor

3055t

tip 222 TRANSISTOR

bdx340

2n3055

2N5000

T1P147

TIP41C EQUIVALENT

TIP 110 transistor

Bow94c

Bow94c