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    TIN RFP Search Results

    TIN RFP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5FRJ11UNNS-002 Amphenol Cables on Demand Amphenol MP-5FRJ11UNNS-002 Flat Silver Satin Modular Cables Plug to Tinned End, RJ11 (4 conductors) 2ft Datasheet
    MP-5FRJ12UNNS-007 Amphenol Cables on Demand Amphenol MP-5FRJ12UNNS-007 Flat Silver Satin Modular Cables Plug to Tinned End, RJ12 (6 conductor) 7ft Datasheet
    MP-5FRJ11UNNS-007 Amphenol Cables on Demand Amphenol MP-5FRJ11UNNS-007 Flat Silver Satin Modular Cables Plug to Tinned End, RJ11 (4 conductors) 7ft Datasheet
    MP-5FRJ12UNNS-014 Amphenol Cables on Demand Amphenol MP-5FRJ12UNNS-014 Flat Silver Satin Modular Cables Plug to Tinned End, RJ12 (6 conductor) 14ft Datasheet
    MP-5FRJ12UNNS-001 Amphenol Cables on Demand Amphenol MP-5FRJ12UNNS-001 Flat Silver Satin Modular Cables Plug to Tinned End, RJ12 (6 conductor) 1ft Datasheet

    TIN RFP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RFP-375375N6Z50-2

    Abstract: No abstract text available
    Text: 30 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 2.0 GHz • 30 Watts


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    RFP-375375N6Z50-2 MIL-E-5400. RFP-375375N6Z50-2 PDF

    hmc506

    Abstract: HMC676LC3C
    Text: g ra tin s Ye ar 25 Ce leb Œ Inn ov ce vi y lit Œ ion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE


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    OC-48 hmc506 HMC676LC3C PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages


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    PTFA181001E PTFA181001F H-37248-2 H-36248-2 PTFA181001E PTFA181001F 100-watt PDF

    10 GHz wideband mixer

    Abstract: HMC676LP3E
    Text: g ra tin Ye ar s 25 Ce leb  Inn ov ce vi y lit  ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB


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    OC-48 10 GHz wideband mixer HMC676LP3E PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at


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    PTFA210701E PTFA210701F PDF

    14N05

    Abstract: FT4N05 F14N05
    Text: f f ï H A ^ 8 E“ ' R R RFD14N05, RFD14N05SM, RFP14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel


    OCR Scan
    RFD14N05, RFD14N05SM, RFP14N05 -220A 75e-5 84e-10 15e-1 21e-5) 1e-30 14N05 FT4N05 F14N05 PDF

    bu245a

    Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
    Text: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00


    OCR Scan
    0QD5704 O-204 O-205 O-218 O-220 rfm4n40 rfm7n40 rfm12n40 rfh12n40 buz351 bu245a 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15 PDF

    Untitled

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUIT KA9201 RF AMP FOR CDP 30 S O P The KA9201 w hich is the RF a m p lifie r is a m o n o lith ic integrated c irc u it designed fo r three-spot type o p tica l pick-up o f the com pact d is c player. It is c o n s is tin g o f RF signal processing c irc u it, Focus


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    KA9201 KA9201 KA8309 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10 13 75705M O DULE T Y P E — T A IL P LA T IN G T Y P E • * * * * _ T ' -P IN L E N G T H IP 3 .9 0 U N G UIDED — T IN /L E A D = 0 4 .7 0 U N G UIDED — TIN O N LY = 1 -E N D W A L L O PTIO N S 0 = O PE N E N D S O F COLUMNS 1.78 — 5 .7 0 4 .7 0 & 5 .7 0


    OCR Scan
    75705M SD-75705-001 PDF

    F1S70N06

    Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
    Text: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model


    OCR Scan
    RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 014i2 23e-3 29e-3 49e-7) 50e-7 84e-9 F1S70N06 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06 PDF

    RFD14N05L

    Abstract: 14N05 RFP14N05L RFD14N05LSM
    Text: Logic-Level Pow er M O S F E T s - RFD14N05L, RFD14N05LSM, RFP14N05L File Number 2246 N-Channel Logic-Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 14 A, 50 V rDs(on): 0.1 Cl N -C H A N N EL E N H A N C E M E N T M ODE


    OCR Scan
    RFD14N05L, RFD14N05LSM, RFP14N05L RFP14N05L AN-7254 AN7260. RFD14N05L 14N05 RFD14N05LSM PDF

    f12n10l

    Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
    Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits


    OCR Scan
    RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter" PDF

    RCA 467

    Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
    Text: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •


    OCR Scan
    RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V RFM10P12 RFM10P15 RFP10P12 RFP10P15* 2CS-992T3 RCA 467 TA9405 transistor RCA 467 TA9404 TA940 92CS-38272 RFP10P15 PDF

    RFM18N08

    Abstract: TA9286 RCA 3432 RFM18N10 RFP18N08 RFP18N10
    Text: Standard Pow er M O S FE T s RFM18N08, RFM18N10, RFP18N08, RFP18N10 File N um ber 1446 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A , 8 0 V — 100 V fo s fo ri : 0 .1 0 Features: m SOA is power-dissipation lim ited • Nanosecond switching speeds


    OCR Scan
    RFM18N08, RFM18N10, RFP18N08, RFP18N10 RFM18N08 RFM18N10 RFP18N08 RFP18N10* M18N08, TA9286 RCA 3432 RFP18N10 PDF

    37525

    Abstract: RFM5P15 RFM5P12 RFP5P12 RFP5P15 TA9321 92CS-39328
    Text: Standard Power M O S F E T s -File Number RFM5P12, RFM5P15, RFP5P12, RFP5P15 1463 P-Channel Enhancement-Mode Power Field-Effect Transistors 5 A, 120 V — 150 V lDS or| -' 1 ° Features: • SOA is pow er-dissipalion lim ited


    OCR Scan
    RFM5P12, RFM5P15, RFP5P12, RFP5P15 RFM5P12 RFM5P15 RFP5P12 O-204AA 37525 RFP5P15 TA9321 92CS-39328 PDF

    RFM12P10

    Abstract: RFP12P10 12P10 RFM12P08 RFP12P08 TA9411 TA9410
    Text: Standard Power MOSFETs RFM12P08, RFM12P10, RFP12P08, RFP12P10 F ile N u m b e r 1495 Power MOS Field-Elffect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 12 A , - 8 0 V a n d - 1 0 0 V rD s on = 0 .3 Q Features:


    OCR Scan
    RFM12P08, RFM12P10, RFP12P08, RFP12P10 and-100 RFM12P08 RFM12P10 RFP12P08 RFP12P10* RFP12P10 12P10 TA9411 TA9410 PDF

    F40N10LE

    Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
    Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V


    OCR Scan
    RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 33e-3 00e-5) 38e-6) F40N10LE 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n PDF

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan
    RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15 PDF

    F15N05L

    Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
    Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m


    OCR Scan
    RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors PDF

    8P08

    Abstract: RFP8P08 37149 RFM8P08 RFM8P10 RFP8P10 TA9411 TA-941
    Text: Standard Power MOSFETs RFM8P08, RFM8P10, RFP8P08, RFP8P10 File Number 1496 P-Channel Enhanceiment-Mode Power Field-Effect Transistors 8 A, -80 V and -100 V rDs on = 0.4 fi Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics


    OCR Scan
    RFM8P08, RFM8P10, RFP8P08, RFP8P10 92CS-36465 RFM8P08 RFM8P10 RFP8P08 RFP8P10* powe8P10 8P08 37149 RFP8P10 TA9411 TA-941 PDF

    RFP50N05

    Abstract: AN72G4 AN7260
    Text: Power MegaFETs RFP50N05 File N um b er 2119 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 50 A, 50 V rD s (o n ) = 0 .0 2 2 O N -C H A N N E L E N H A N C E M E N T M ODE Features: • S ingle p u lse avalanche e n e rg y ra ted » SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan
    RFP50N05 RFP50N05 9zcs-43040 AN72G4 AN7260. IN92408 1CB-43MO AN7260 PDF

    ID35

    Abstract: RFM7N35 RFM7N40 RFP7N35 RFP7N40
    Text: Standard Power M O S F E T s _ RFM7N35, RFM7N40, RFP7N35, RFP7N40 File Number 1536 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 7 A, 350 V and 400 V rDs on : 0.75C}


    OCR Scan
    RFM7N35, RFM7N40, RFP7N35, RFP7N40 92CS-3374I RFM7N35 RFM7N40 RFP7N35 RFP7N40* AN-7254 ID35 RFP7N40 PDF

    RCA bipolar transistors

    Abstract: M4N35 RFP4N40 RFM4N35 RFM4N40 RFP4N35 AN7254
    Text: Standard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 File Num ber 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 4 A, 350 V and 400 V rDs on : 2Q Features: • SOA is pow er-dissipation lim ited


    OCR Scan
    RFM4N35, RFM4N40, RFP4N35, RFP4N40 RFM4N35 RFM4N40 RFIP4N35 RFP4N40* CS-370S0 RCA bipolar transistors M4N35 RFP4N35 AN7254 PDF

    f25n06l

    Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
    Text: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,


    OCR Scan
    RFP25N06L RFP25N06L* CATOFP25N0GLCF2 92CS-37075 AN7254 AN7260. f25n06l F25N06 RFP2506L RFP25N06L TA9638 PDF