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KEMET Corporation C410C103Z5U5TA9404 .010UF 50.0V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C410C103Z5U5TA9404	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.05416	Buy Now
KEMET Corporation C410C683K5R5TA9404 .068UF 50.0V
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DigiKey	C410C683K5R5TA9404	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.10519	Buy Now
KEMET Corporation C410C272K5R5TA9404 2700PF 50.0V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C410C272K5R5TA9404	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.09316	Buy Now
KEMET Corporation C410C223K5R5TA9404 .022UF 50.0V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C410C223K5R5TA9404	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.11916	Buy Now
KEMET Corporation C410C333K5R5TA9404 .033UF 50.0V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C410C333K5R5TA9404	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.11916	Buy Now

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TA940 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RFM10P12 Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334 Text: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching	Original	RFP10P15 -150V, -150V TA9404. RFM10P12 RFM10P15 TA940 RFP10P12 RFP10P15 TB334	PDF
an7254 Abstract: RFL1P10 RFL1P08 Text: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such	Original	RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260. RFL1P10 RFL1P08	PDF
TA9401 Abstract: 92CS-37586 RFL1P08 36485 3771 RFL1P10 RFP2P08 RFP2P10 Text: Standard Power M O S F E T s - RFL1P08, RFL1P10, RFP2P08, RFP2P10 F ile N u m b e r 1535 Power MOS Field-Eifect Transistors TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, -80 V and -100 V	OCR Scan	RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 92C3-37S9I 92CS-37710 TA9401 92CS-37586 36485 3771	PDF
RCA 467 Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15 Text: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •	OCR Scan	RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V RFM10P12 RFM10P15 RFP10P12 RFP10P15* 2CS-992T3 RCA 467 TA9405 transistor RCA 467 TA9404 TA940 92CS-38272 RFP10P15	PDF
TA9401 Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10 Text: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 \| 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 PMP411A. 92CS-37569 TA9401 TA940	PDF
RFP6P10 Abstract: 37149 RFM6P08 RFM6P10 RFP6P08 MCI 1496 P 2C3370 Text: E SOLID STATE D T \| 3a7SDfll 0Dlfl2aS 0 H Ì ¿töS5081 G E S O L I D S T A T E 0 1E 18225 Standard Power MOSFETs _ RFM6P08, RFM6P10, RFP6P08, RFP6P10 D T -39-^i File Number 1490 P-Channel Enhancement-Mode Power Field-Effect Transistors 6 A, 80 V — 100 V	OCR Scan	3fl750fll D01fl25S RFM6P08, RFM6P10, RFP6P08, RFP6P10 RFM6P08 RFM6P10 RFP6P08 RFP6P10* 37149 MCI 1496 P 2C3370	PDF
Untitled Abstract: No abstract text available Text: S D A -B 7 2 18- 12 S872I8I2 RECOMMENDED PC BOARD LAYO U T 2 .9 6 0.117 1.20 *0.08 0 .0 4 7 ±0.003 FOR PEG ONLY OPTION SCALE 4:1 PEG D ETA IL "A" N O TES I. : M A T E R IA L HO U SIN G : - NYLON TE R M IN A L A 3. - 66 THERM O C A R T R ID G E P L A T IN G	OCR Scan	S872I8I2 TA94-07Z TA93-2I7 T9T-282 970ZZ5 9307IZ	PDF
TA940 Abstract: CKT84 ML marking 9S02 Text: 18-06*» NOTES : ENG. NO SD A-872 I. MATERIAL : HOUSING - N Y LO N 6 6 THERMO P L A S T I C , 9 4 V - 0 TERM INAL - CARTRIDGE BRASS P L A T I N G - P R E - P L A T E D TIN A L L O Y \ ^ 7 M A R K " P 8 . P 9 1 ON B A C K W A L L .T O ^ T H E A. PART BE A S L A R G E A S P O S S I B L E	OCR Scan	CKT84 T97-4I CC95-039 TA95-063 TA94-072 TA93-2I7 SDA-87218-06Â TA93-020 TA940 ML marking 9S02	PDF
Untitled Abstract: No abstract text available Text: LO O NOTES : I. < o MATERIAL : HOUSING - NYLON 66 THERMO PLASTIC, 94V-0 TERMINAL - CARTRIDGE BRASS PLATING - PRE-PLATED TIN ALLOY T^7MARK "P8.P91 ON BACKWALL.TO BE AS LARGE AS POSSIBLE T^7THE VOID OPTION IS FOR THE POLARIZATION KEY A. PART NO. LEGEND : 87218 - 0 6 * *	OCR Scan	T1939-014 GC95-039 A96-063 TA94-072 TA93-2I7 SDA-872 A93-020	PDF
RFM10P12 Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233 Text: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 \|~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode	OCR Scan	RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V and-150 RFM10P12 RFM10P15 RFP10P12 RFP10P15* RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233	PDF
74ti Abstract: 68CKT Text: I.40±.05 l.2T±.05 68TH CIRCUIT r 35TH CIRCUIT ILO *.05 NOTES 1 MATERIAL HOUSING:HIGH TEMP. PLASTIC. WHITE PIN ; COPPER ALLOY 2 ) PLATING CONTACT AREA:5ELECTIVE GOLD.THICKNESS=0.1 MICROMETER MIN. OVER PALLADIUM-NICKEL SOLDER TAIL AREA: TIN-LEAD, THICKNESS^ 1.0 MICROMETER MIN.	OCR Scan	P5-89074 74TI-I TA94-I43 TA94-040 97092C 940B25 SDA-89147-« 74ti 68CKT	PDF
Untitled Abstract: No abstract text available Text: CKT SIZE DIM A DIM A 9 DIM C * 4 -4 0 FLUSH INSERT DIM D 15 2.77 TYP .109 37 6.96 .436 .274 24.66 19.38 6.97 .274 .984 39.14 33.32 1.312 .971 .763 53.04 47.04 38.38 33.22 6.91 2.088 1.852 1.5 11 1.308 .272 69.32 63.50 54.84 49.83 6.84 2.729 2.500 2.159 1.962	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: RFL1P08, RFL1P10 HARRIS S E M I C O N D U C T O R 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260.	PDF
Untitled Abstract: No abstract text available Text: -F IR S T C IR C U IT ^ 34TH NOTES C IR C U IT l.4 0 ± .0 5 1 M A T E R I A L H O U S IN G ; H IG H P IN T E M P . P L A S T I C , W H IT E ; CO PPER ALLO Y 2 ) P L A T IN G C O N TA CT A R E A :S E L E C T IV E O VER P A L L A D IU M -N IC K E L SOLD ER	OCR Scan	T98-074 TA94-M3 TA94-040 SDA-89147-«	PDF

Untitled Abstract: No abstract text available Text: MATERIAL 8 HOUSING - PPS.U L 94V-0 . COLOR : BROWN TERMINAL - PHOSPHOR BRONZE. FINISH - GOLD FLASH IN CONTACT AREA. I.52um/60uln MIN. TIN IN SOLOER TAIL, BOTH OVER 0.76um/ 30uln MIN. NICKEL OVERALL. 1 - 0.25um /l0uln MIN. GOLD IN CONTACT AREA, l.52um/60uln M[N. TIN IN SOLDER TAIL. BOTH OVER	OCR Scan	88SL0T 52um/60uln 30uln 25um/l0utn 76um/30uln	PDF
Untitled Abstract: No abstract text available Text: 3 .0 5 Ü . 0 0 8 4.45 .175 J riiriinnnnnnnnrii riin □□□□□□□□□□□ nrii ri Ì u iiu u u u u u it it h Y 'l UU 1if f f n n n n n n n n r f 1 U l's[r: Ulll 1H s ^=g^L WITH TWO END CUT r 55.8 8 2 .2 0 0 itiitinnnnnnnrüFT itin— - 50 8 .35	OCR Scan	52um/6fluln 30uln 25um/l0uln 52um/60uln 76um/30u1n 38um/l5u	PDF
Untitled Abstract: No abstract text available Text: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V -150V, and-150V TA9404. AN7254	PDF