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    onsemi RFG70N06

    MOSFET N-CH 60V 70A TO247-3
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    RFG70N06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFG70N06 Fairchild Semiconductor 70A, 60V, 0.014 ?, N-Channel Power MOSFETs Original PDF
    RFG70N06 Harris Semiconductor 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFG70N06 Intersil 70A, 60V, 0.014 ?, N-Channel Power MOSFETs Original PDF
    RFG70N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG70N06 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P Channel, 60V, 70A, Pkg Style TO247 Scan PDF

    RFG70N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP70N06

    Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. O-247 O-220AB O-263AB 175oC TB334 RFP70N06 RFP70N06 AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    rfp70n06

    Abstract: No abstract text available
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet Title FG7 06, P70 6, 1S7 06S bt A, V, 14 m, anwer OSTs utho eyrds ter- July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. rfp70n06

    RFP70N06

    Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM O-247 175oC RF1S70N06 RFP70N06 F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260

    RFP70N06

    Abstract: TA78440 F1S70N06 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM TA78440. RFG70N06 O-247 O-220AB O-262AA O-263AB RFP70N06 TA78440 F1S70N06 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    0N06

    Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06SM RFP70 0N06S RFG70N06 O-247 O-220AB 175oC TB334 0N06 RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70

    RFP70N06

    Abstract: F1S70N06 TA78440 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM TA78440. RFG70N06 O-247 O-220AB O-262AA O-263AB RFP70N06 F1S70N06 TA78440 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM TA78440. RFG70N06 O-247 O-220AB O-262AA O-263AB

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF70N06 MIL-S-19500. 150oC TA49007. AN7254 AN7260 AN9321 AN9322 RFF70N06 RFG70N06

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 Data Sheet January 2002 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives


    Original     		PDF RFF70N06 RFF70N06 MIL-S-19500. AN7254 AN7260 AN9321 AN9322 RFG70N06

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    RFP70N06

    Abstract: No abstract text available
    Text: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		PDF RFP70N06 TA78440. O-220AB RFP70N06

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    F1S70N06

    Abstract: No abstract text available
    Text: P *3 3 S RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili­


    OCR Scan     		PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 014i2 05e-4 11e-5) 1e-30 46e-4 F1S70N06

    F1S70N06

    Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
    Text: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model


    OCR Scan     		PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 014i2 23e-3 29e-3 49e-7) 50e-7 84e-9 F1S70N06 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06

    70n06 to 247

    Abstract: RFP70N06 70n06
    Text: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB


    OCR Scan     		PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. RF1S70N06SM AN7260. 70n06 to 247 RFP70N06 70n06

    Untitled

    Abstract: No abstract text available
    Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum


    OCR Scan     		PDF RFF70N06 RFF70N06 0-025i2 MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    AN7254

    Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
    Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 0-022O 11e-12 91e-3TRS1 26e-3 07e-6 12e-9 AN7254 RF650N06 RFP50N06 AN-7254 mosfat 24v mosfat RFP70N06 34069

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r