Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TI 506 TRANSISTOR Search Results

    TI 506 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TI 506 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BF 506

    Abstract: bf506 wl SOT-23
    Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance


    OCR Scan     		PDF 569-GS transistor BF 506 bf506 wl SOT-23

    transistor C639

    Abstract: transistor C635 c639 transistor C639 w
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635


    OCR Scan     		PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w

    Untitled

    Abstract: No abstract text available
    Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA*25t: C haracteristic Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 251


    OCR Scan     		PDF 2N6520 -50mA, -10mA -100V, -50mA

    Untitled

    Abstract: No abstract text available
    Text: DTA144TE DTA144TUA DTA144TKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA144TE (EMT3) 0 .7 ± û . I bias resistor consists of a thin-film resistor which is completely isolated,


    OCR Scan     		PDF DTA144TE DTA144TUA DTA144TKA SC-70) SC-59) DTA144TE, DTA144TUA, DTA144TKA; DTA144TE

    BDT42

    Abstract: BDT41 BDT42B IEC134 TIP42 TIP42 equivalent T3321
    Text: N AMER PHILIPS/DISCRETE 2SE D • bbS3T31 0 0 n 7 2 T ■ BDT42;A BDT42B;C T-33-ÄJ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type, P-N-P complements are


    OCR Scan     		PDF BDT42 BDT42B T-33-Ã TIP42 BDT41 O-220AB 7Z82922 00n735 7Z82918 IEC134 TIP42 equivalent T3321

    K 3911

    Abstract: BUK451-60A BUK451-60B T0220AB
    Text: Philips Components D ata sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK451-60A/B 711Dfl2b BUK451 711Gfi2b 44S73 K 3911 BUK451-60A BUK451-60B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: BAI F4Z Com pound Transistor * P M J m W -f& M m ip - ii : m m * (R i = 22 k£2) OBN1F4Z t n > 7 ‘ ij y > ^ U Tf4:fflT"§ it,. ( T a = 25 °C ) m g »§• %- /E fS ip- i£ VljBO 60 V ■3 v 9 -y ■x . i -, 9H H 7 ir£ V e to 50 V - -9 * V kbo 5 V 3 u


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BF620 BF622 _ _^ SILICON EPITAXIAL TRANSISTORS* • For video output stages N-P-N transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers. P-N-P complements are BF621 and BF623 respectively.


    OCR Scan     		PDF BF620 BF622 BF621 BF623

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue A p ril 1 9 9 5 BSP220 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES PARAMETER SYMBOL • Direct interface to C-MOS, TTL, etc. “Vds


    OCR Scan     		PDF BSP220 OT223

    Untitled

    Abstract: No abstract text available
    Text: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at


    OCR Scan     		PDF MPS-A13

    Untitled

    Abstract: No abstract text available
    Text: BF583 BF585 BF587 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T 0 -2 0 2 plastic package, intended fo r use in video o u tp u t stages in black-andw h ite and in c o lo u r television receivers. QUICK REFERENCE D ATA BF583 BF585 BF587 v CBO max.


    OCR Scan     		PDF BF583 BF585 BF587 BF587

    sgsp358

    Abstract: tr/pcb-3/SGSP358
    Text: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF SGSP358 O-220 sgsp358 tr/pcb-3/SGSP358

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE ]> bb53R31 0030610 Tib « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF bb53R31 T0220AB BUK555-1OOA/B BUK555 BUK555-100A/B

    2SD78

    Abstract: 2SD73 2s096 2SB481 2SD315 2SD79 2SD96 2SD102 2SD103 2sb48
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD78 2SD79 2SD73, 40-S20 2SD315 2SD328 2SD73 2s096 2SB481 2SD315 2SD96 2SD102 2SD103 2sb48

    Untitled

    Abstract: No abstract text available
    Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special


    OCR Scan     		PDF b53531 002MLi21 BF510 BF510) BF511) BF512) BF513) bb53531 D02MbE4

    SEF442

    Abstract: c230 diode SEF440
    Text: S G S-THOMSON S 7T2ci237 QQlâQD'i : 73C 17 506 D T- 3 f . N -C H A N N EL POW ER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors. A BSO LU TE MAXIMUM RATINGS


    OCR Scan     		PDF SEF440 SEF441 SEF442 SEF443 00V/450V 00V/450V SEF443 c230 diode

    s149

    Abstract: transistor Siemens 14 S S 92
    Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking


    OCR Scan     		PDF E6325: SS149 Q62702-S623 Q67000-S252 s149 transistor Siemens 14 S S 92

    MC 140 transistor

    Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
    Text: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ355T is-18 T0218AA; BUZ355 T-39-13 MC 140 transistor "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm


    OCR Scan     		PDF 000SA04 2SC3969 50/iS

    bu 508 df

    Abstract: No abstract text available
    Text: SIEMENS BUZ 73 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 73 A Yds 200 V b 5.5 A flbSion Package Ordering Code 0.6 n TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C


    OCR Scan     		PDF O-220 C67078-S1317-A3 15onductor bu 508 df

    BSW68A 1990

    Abstract: bsw68a
    Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


    OCR Scan     		PDF BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / ELECTRONDEVICE SILICON TRANSISTOR / _ _ FIM1L4Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES • Resistor B u ilt-in TYPE O'— ' V W — ft. • C o m plem entary to F A 1 L 4 Z a b s o l u t e : m a x im u m


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS/DISCRETE bt.53131 0011721 4 • BDT42;A BDT42B;C T -3 3 -*/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type. P-N-P complements are


    OCR Scan     		PDF BDT42 BDT42B TIP42 BDT41 BDT42 BDT42A b53T31

    2SB75

    Abstract: 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 7C-25-C) 2SB75 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C