2SD103 Search Results

2SD103 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SD1033-E1-AZ		Renesas Electronics Corporation	Bipolar Power Transistors, , /
2SD1033-AZ		Renesas Electronics Corporation	Bipolar Power Transistors, , /

2SD103 Price and Stock

Filter by Manufacturer


TAIYO YUDEN UMK212SD103JD-T CAP CER 10000PF 50V 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UMK212SD103JD-T	Cut Tape	2,155		1	1 $0.36 10 $0.24 100 $0.1439 1000 $0.09595 10000 $0.09595	Buy Now
	UMK212SD103JD-T	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.0625	Buy Now
	UMK212SD103JD-T	Digi-Reel			1	1 $0.36 10 $0.24 100 $0.1439 1000 $0.09595 10000 $0.09595	Buy Now
Mouser Electronics	UMK212SD103JD-T		2,309			1 $0.36 10 $0.239 100 $0.143 1000 $0.095 10000 $0.078	Buy Now
Master Electronics	UMK212SD103JD-T		4,774			1 - 10 - 100 - 1000 - 10000 $0.0784	Buy Now
TAIYO YUDEN UMK212SD103KD-T CAP CER 10000PF 50V 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UMK212SD103KD-T	Cut Tape	716		1	1 $0.33 10 $0.216 100 $0.1295 1000 $0.08636 10000 $0.08636	Buy Now
Mouser Electronics	UMK212SD103KD-T		4,870			1 $0.33 10 $0.159 100 $0.103 1000 $0.087 10000 $0.07	Buy Now
TTI	UMK212SD103KD-T	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.069	Buy Now
Samtec Inc S2SD-10-30-L-02.75-S 2.00 MM TIGER EYE DOUBLE ROW DIS Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S2SD-10-30-L-02.75-S	Bulk			1	1 $13.2 10 $13.2 100 $13.2 1000 $13.2 10000 $13.2	Buy Now
Avnet Americas	S2SD-10-30-L-02.75-S	Bulk			1	1 $8.25 10 $7.63 100 $6.02 1000 $6.02 10000 $6.02	Buy Now
Master Electronics	S2SD-10-30-L-02.75-S					1 - 10 $10.46 100 $6.86 1000 $5.44 10000 $5.44	Buy Now
Samtec Inc S2SD-10-30-L-12.00-S 2.00 MM TIGER EYE DOUBLE ROW DIS Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S2SD-10-30-L-12.00-S	Bulk			1	1 $17.31 10 $17.31 100 $17.31 1000 $17.31 10000 $17.31	Buy Now
Mouser Electronics	S2SD-10-30-L-12.00-S					1 $11.33 10 $10.47 100 $8.27 1000 $7 10000 $7	Get Quote
Master Electronics	S2SD-10-30-L-12.00-S					1 - 10 $14.36 100 $9.12 1000 $7.36 10000 $7.36	Buy Now
Samtec Inc T2SD-10-30-L-24.00-S 2.00 MM TIGER EYE DOUBLE ROW DIS Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T2SD-10-30-L-24.00-S	Bulk			1	1 $14.18 10 $14.18 100 $14.18 1000 $14.18 10000 $14.18	Buy Now
Avnet Americas	T2SD-10-30-L-24.00-S	Bulk			1	1 $14.18 10 $13.42 100 $10.92 1000 $10.92 10000 $10.92	Buy Now
Mouser Electronics	T2SD-10-30-L-24.00-S					1 $14.18 10 $13.42 100 $10.92 1000 $9.24 10000 $9.24	Get Quote
Master Electronics	T2SD-10-30-L-24.00-S					1 $18.98 10 $16.87 100 $11.88 1000 $9.85 10000 $9.85	Buy Now

Find more 2SD103 price and stock on Findchips.com

2SD103 Datasheets (96)

Part	Manufacturer	Description	Type	PDF
2SD103	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD103	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SD103	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SD103	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD103	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD103	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD103	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD103	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD103	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SD103	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD103	Unknown	Cross Reference Datasheet	Scan	PDF
2SD103	Toshiba	Japanese Transistor Data Book	Scan	PDF
2SD103	Toshiba	Silicon NPN Diffused Junction Transistor	Scan	PDF
2SD1030	Panasonic	Silicon NPN epitaxial planer type	Original	PDF

2SD1030	Panasonic	NPN Transistor	Original	PDF
2SD1030	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SD1030	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1030	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1030	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1030	Unknown	The Japanese Transistor Manual 1981	Scan	PDF

2SD103 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB812 Abstract: 2SD1032 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications	Original	PDF	2SB812 2SD1032 -30mA; 2SB812 2SD1032
2SB187 Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105 Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150	Original	PDF	2SD101 2SD102 2SD103 2SD104 2SD105 2SD106 2SD107 2SD108 2SD109 2SD110 2SB187 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
2SD1030 Abstract: 581 transistor Text: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 • Features ● ● 1.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage	Original	PDF	2SD1030 2SD1030 581 transistor
2SD1030 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE	Original	PDF	2002/95/EC) 2SD1030 2SD1030
2SD1030 Abstract: VEBO-15V Text: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO	Original	PDF	2SD1030 Unit1200 2SD1030 VEBO-15V
2SD1030 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an W is k y	Original	PDF	2002/95/EC) 2SD1030 2SD1030
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15	Original	PDF	2SD1033 O-252 500mA,
2SD1037 Abstract: MT200 Text: Product Specification www.jmnic.com 2SD1037 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Excellent safe operating area ・High current capability APPLICATIONS ・For electrical supply ,DC-DC converters and low frequency power amplifier applications	Original	PDF	2SD1037 MT-200 MT-200) 2SD1037 MT200
2SD1033 Abstract: No abstract text available Text: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1	Original	PDF	2SD1033 O-252 500mA, 2SD1033
Untitled Abstract: No abstract text available Text: 2SD1031 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120è V(BR)CBO (V)120 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SD1031
2SD1030 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 0.4±0.2 5˚	Original	PDF	2002/95/EC) 2SD1030 2SD1030
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 2.8+0.2 –0.3 2 1 di p Pl lan nclu	Original	PDF	2002/95/EC) 2SD1030
2SB768 Abstract: 2SD1033 Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1033 is designed for Color TV vertical deflection output, +0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 5.5 ±0.2 • High Voltage VCEO = 150 V • Complement to 2SB768	Original	PDF	2SD1033 2SD1033 2SB768 2SB768
hfe1 Abstract: 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications.	Original	PDF	2SD1032 2SB812 hfe1 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn

2sd1037 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications	Original	PDF	2SD1037 MT-200 MT-200) 2sd1037
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE	Original	PDF	2002/95/EC) 2SD1030
2SD1030 Abstract: No abstract text available Text: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO	Original	PDF	2SD1030 2SD1030
2SD1030 Abstract: No abstract text available Text: Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat	Original	PDF	2SD1030 2SD1030
2SD103 Abstract: transistor mp IC marking jw Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES	OCR Scan	PDF	2SD1033 2SB768 I-1209} 2SD103 transistor mp IC marking jw
B1003 Abstract: TEB-1002 2SD1033 TEB-1014 MEI Semiconductors 2SB768 MEI-1202 Text: DATA SHEET SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1033 is designed fo r Color TV Vertical Deflection Output, PACKAGE DIMENSIONS in m illim eters especially in Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 150 V	OCR Scan	PDF	2SD1033 2SD1033 2SB768 IEI-1209) B1003 TEB-1002 TEB-1014 MEI Semiconductors 2SB768 MEI-1202
d 1033 Abstract: 2SD1033 Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR M P -3 D E S C R IP T IO N 2 S D 1 0 3 3 is designed fo r C o lo r T V V e rtic a l D e fle c tio n O u tp u t, especially In H y b rid Inte grated C ircuits. FEATURES P A C K A G E D IM E N S IO N S	OCR Scan	PDF	2SD1033 d 1033 2SD1033
IGNITOR Z 400 M diagram Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8 Text: PANASONIC INDL/ELEK-CSEtllJ 7EC D \| 1 1 3 5 6 5 M □ 7 ^ 3^ / / \| 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^	OCR Scan	PDF	2SD1032, 2SD1032A 2SB812, 2SB812A 2SB812A 2SD1032 IGNITOR Z 400 M diagram 2SD1043 2SB812 IC 78 2SD1032A IC4a ic t 4a 8
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR M P -3 DESCRIPTION 2SB768 designed fo r Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • High Voltage VCEO • —150 V • Complement to 2SD1033	OCR Scan	PDF	2SB768 2SB768 2SD1033
2SD1034A Abstract: 2SD1034 Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1034A INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS a-04.0 ± a 3 MOTOR CONTROL APPLICATIONS. DEEP 2.5Ì0.4 4 MIN. FEATURES: . High Voltage : V c e SUS =450V	OCR Scan	PDF	2SD1034A 300iis, 500kg 2SD1034A 2SD1034

2SD103 Search Results

2SD103 Result Highlights (2)

2SD103 Price and Stock

TAIYO YUDEN UMK212SD103JD-T

TAIYO YUDEN UMK212SD103KD-T

Samtec Inc S2SD-10-30-L-02.75-S

Samtec Inc S2SD-10-30-L-12.00-S

Samtec Inc T2SD-10-30-L-24.00-S

2SD103 Datasheets (96)

2SD103 Datasheets Context Search

2SB812

2SB187

2SD1030

2SD1030

2SD1030

2SD1030

Untitled

2SD1037

2SD1033

Untitled

2SD1030

Untitled

2SB768

hfe1

2sd1037

Untitled

2SD1030

2SD1030

2SD103

B1003

d 1033

IGNITOR Z 400 M diagram

Untitled

2SD1034A