ST7033
Abstract: 79S381 micron memory sram mt8d25632 R3052 ST191 R3081E 00016-001 79R3081 IDT79R3081E conn female 300 pins
Text: IDT79S381 R3081 RISController 33MHz Evaluation Board User's Manual May 9, 1994 Revision 0.9 Integrated Device Technology, Inc. 1994 by Integrated Device Technology, Inc. ABOUT THIS MANUAL The 33MHz IDT79S381 is a hardware and software Evaluation Board that
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IDT79S381
R3081
33MHz
IDT79S381
R305x
R3041,
R3051
R3052
ST7033
79S381
micron memory sram mt8d25632
ST191
R3081E
00016-001
79R3081
IDT79R3081E
conn female 300 pins
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edo ram 72pin
Abstract: TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns TC5118165BJ hidden refresh TC51181
Text: TOSHIBA THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 1,048,576 WORD X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity such
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THM3210B5BS/BSG-60
THM3210B5BS/BSG-70
THM3210B5BS/BSG
TC5118165BJ
890mW
THMxxxxxx-60)
575mW
THMxxxxxx-70)
edo ram 72pin
TC5117405
TC5118165
TC5118
bsg70
simm EDO 72pin
104ns
hidden refresh
TC51181
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M5M23160
Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1
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16-Meg
MSM5116160
MSM5116400
MSM5117100
MSM5117400
MSM5117800
MSM51V16100
MSM51V16160
MSM51V16400
MSM51V17100
M5M23160
TC5117400
oki cross
kmm5322000a
THM324080AS
lh538000
424100
IBM025161
MC-421000A36
uPD482445
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eeprom toshiba L 510
Abstract: connector FD34 h044 ST7033 IBM POS schematics simm 72pin micron memory sram mt8d25632 DB15 connector pin outs DB15 connector female 79S381
Text: IDT79S381 R3081 RISController 33MHz Evaluation Board User's Manual May 9, 1994 Revision 0.9 Integrated Device Technology, Inc. 1994 by Integrated Device Technology, Inc. ABOUT THIS MANUAL The 33MHz IDT79S381 is a hardware and software Evaluation Board that
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Original
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PDF
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IDT79S381
R3081
33MHz
IDT79S381
R305x
R3041,
R3051
R3052
eeprom toshiba L 510
connector FD34
h044
ST7033
IBM POS schematics
simm 72pin
micron memory sram mt8d25632
DB15 connector pin outs
DB15 connector female
79S381
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TC5118160AJ
Abstract: No abstract text available
Text: TOSHIBA THM3220CQAS/ASG -70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3220C0A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 4 TC5118160AJ device on the printed circuit board. This module can be as well used as 4,194,304 word by 16 bit
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THM3220CQAS/ASG
THM3220C0A
TC5118160AJ
562mW
DQ0-31)
Q025A7A
THM3220C0AS/ASG
TIIM322OC0AS/ASG
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THM322500AS70
Abstract: S55MO C55A0
Text: 262,144 W O R D S x 32 BIT D Y N A M IC R A M M O D U LE DESCRIPTION The THM322500BS/BSG/AS/ASG is a 524,288 words by 32 bits dynamic RAM module which assembled 8 pcs of TC51425GAJ/BJ on the printed circuit board. These modules can be as well used as 524,288 words by 1G bits dynamic RAM module, by means of connecting DQO and DQ16, DQ1 and
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THM322500BS/BSG/AS/ASG
TC51425GAJ/BJ
B-121
THM322500BS-60,
THM322500AS-70,
THM322500BSG-60,
THM322500ASG-70,
B-122
THM322500AS70
S55MO
C55A0
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THM322020ASG60
Abstract: cx53
Text: TOSHIBA THM322020AS/ASG -60/70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM322020A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices on the printed circuit board. This module can be used as well as 4,194,304 word by 16
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THM322020AS/ASG
THM322020A
TC514400ASJ
DQ0-31)
THM322020AS
THM322020ASO
THM322020ASG60
cx53
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Untitled
Abstract: No abstract text available
Text: 2,097,152 W O R D S X 32 BIT D Y N A M IC RAM PRELIMINARY M O D ULE DESCRIPTION The THM322020S is a 2,097,152 words by 32 bits dynamic RAM module which assembled 16 pcs of TC514400J on the printed circuit board. The THM322020S can be as well used as 4,194,304 words by
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THM322020S
TC514400J
708mW
THMxxxxxx-80)
048mI
B-119
THM322020S-80,
THM322020SG-80,
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TC5118165B
Abstract: TC5118165 thm322
Text: TOSHIBA THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
THMxxxxxx-60)
596mW
THMxxxxxx-70)
THM3220C5BS/BSG
89MAX.
11111m
TC5118165B
TC5118165
thm322
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THM3220C0AS
Abstract: KAS 34
Text: TOSHIBA THM3220C0AS/ASG -70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3220C0A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 4 TC5118160AJ device on the printed circuit board. This module can be as well used as 4,194,304 word by 16 bit
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THM3220C0AS/ASG
THM3220C0A
TC5118160AJ
xxxxxx-70)
89MAX.
TIIM3220C0AS/ASG
THM3220C0AS
KAS 34
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Untitled
Abstract: No abstract text available
Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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00Bfl47b
THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
89MAX.
THM3220C5BS/BSG
17EHfl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY M2 E D 2,097,152 W ORDS X 32 BIT D Y N A M IC RAM Hi ^0 ^ 7 5 4 8 0 Q2 1 S20 S PRELIMINARY M O D U LE DESCRIPTION The THM322020S is a 2,097,152 words by 32 bits dynamic RAM module which assembled 16 pcs of TC514400J on the printed circuit board. The THM322020S can be as well used as 4,194,304 words by
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THM322020S
TC514400J
B-120
THM322020S-80,
THM322020SG-80,
l724fl
DQODQ31
B-121
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THM322500AS-70
Abstract: tc514256
Text: 262,144 W O R D S X 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTION The THM322500BS/BSG/AS/ASG is a 524,288 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514256AJ/BJ on the printed circuit board. These modules can be as well used as 524,288 words by 1G bits dynamic RAM module, by means of connecting DQO and DQ16, DQ1 and
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THM322500BS/BSG/AS/ASG
TC514256AJ/BJ
-THM322500ASG-70,
B-121
THM322500BS-60,
THM322500AS-70,
THM322500BSG-60,
THM322500ASG-70,
B-122
THM322500AS-70
tc514256
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48nc60
Abstract: SYM801 THM322020
Text: THM322020S-80, 10 THM322020SG-80, 10 2,097,152 WORDS X 32 BIT DYNAMIC RAM PRELIMINARY MODULE DESCRIPTION The THM322020S is a 2,097,152 words by 32 bits dynamic RAM module which assembled 16 pcs of TC514400J on the printed circuit board. The THM322020S can be as well used as 4,194,304 words by
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THM322020S-80,
THM322020SG-80,
THM322020S
TC514400J
THM3220ot«
B-119
48nc60
SYM801
THM322020
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k557
Abstract: S-10 TC514400J MO-15
Text: 2,097,152 W O R D S X 32 BIT D Y N A M I C RAM PRELIMINARY MODULE DESCRIPTION The THM322020S is a 2,097,152 words by 32 bits dynamic RAM module which assembled 16 pcs of TC514400J on the printed circuit board. The THM322020S can be as well used as 4,194,304 words by
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THM322020S
TC514400J
THM322020
89MAX.
THM322020S
THM322020SG
B-123
k557
S-10
MO-15
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THM408
Abstract: THM324000
Text: Dynamic RAM Module Capacity Type No. Organiza tion 8 M B it TH81070CS/CL-50/AS/AL-60/70/80 1M x8 B M B it THM91070AS/AL-60/70/80 1M x 9 1 6 M B it THM 161000CSG-50/ASG-6CV7CV80 1 M x 16 1 8 M B it TH M 181000ASG-60/7CV80 1 M x 18 THM84000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80
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TH81070CS/CL-50/AS/AL-60/70/80
THM91070AS/AL-60/70/80
161000CSG-50/ASG-6CV7CV80
181000ASG-60/7CV80
THM84000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80
y70/80
84000AL
THM321090CS-50/AS-60/70/80
THM331OOOAS-60/70/80
THM94000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80
THM408
THM324000
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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DYNAMIC RAM CROSS REFERENCE
Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102
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KM41C4000
KM41C4001
KM41C4002
KM44C1000
KM44C1002
TC514100
TC514101
TC514102
TC514400
TC514402
DYNAMIC RAM CROSS REFERENCE
KMM5362000
KMM53220
KMM581000
KMM532200
THMS361020
KMM591000
MC-422000A36
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