2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification M Di ain sc te on na tin nc ue e/
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2002/95/EC)
XP01601
XP1601)
2SB0709A
2SB709A
2SD0601A
2SD601A
XP01601
XP1601
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A XP0C301 XP1C301
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0C301 (XP1C301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) 0.425 Unit: mm For general amplification M Di ain sc te on na tin nc ue e/
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PDF
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2002/95/EC)
XP0C301
XP1C301)
2SB0709A
2SB709A)
2SD0601A
2SD601A)
-10ms
2SB0709A
2SB709A
2SD0601A
2SD601A
XP0C301
XP1C301
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2SA1738
Abstract: 2SC3757 XP04654 XP4654
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04654 (XP4654) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For high-speed switching M Di ain sc te on na tin nc ue e/
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PDF
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2002/95/EC)
XP04654
XP4654)
2SA1738
2SC3757
XP04654
XP4654
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2sd1915F
Abstract: XP01504 XP1504 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05
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PDF
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2002/95/EC)
XP01504
XP1504)
2sd1915F
XP01504
XP1504
2SD1915
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Untitled
Abstract: No abstract text available
Text: Transistors Switching 450V, 5A 2SK2713 • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e gu a ra n te e d at V 5) gss = +30V. Easily designed drive circuits.
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2SK2713
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: 2SC4997 / 2SC4998 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Transistors I High-frequency Amplifier Transistor, RF switching 2SC4997 / 2SC4998 •Feature« •A b s o lu te maximum ratings T a = 2 5 t 1 ) High ft. (fr—240MHz) P a ra m e te r •P a c ka g in g specifications and hre
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2SC4997
2SC4998
2SC4618
2SC4098
2SC2413K
2SC2058S
240MHz)
0Dlb713
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2sc5274
Abstract: No abstract text available
Text: 2SC5274 Transistors High-Voltage Amplifier Transistor 150V, 50mA I 2SC5274 •F e a tu re s 1 ) High breakdown voltage. (Vceo= 150V) 2 ) Low collector output capacitance. (Typ.2pF at Vcs=12V) •A b s o lu te maximum ratings ( T a = 2 5 t ) P a ra m e te r
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2SC5274
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
2sc5274
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Untitled
Abstract: No abstract text available
Text: Transistors Switching 600V, 4A 2SK2792 •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d
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2SK2792
O-220FN
0Dlb713
O-220FN
O220FP
T0-220FP,
O-220FP.
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mosfet ftr 03
Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Text: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. , 5 + o .a 4 . 5 - 0 ., 10.0+23 2) High-speed switching. „+0.2 •8—0.1 3) W ide SOA (safe operating area). 4) G a te-so urce v o lta g e g u ara ntee d
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2SK2711
O-220FN
O-220FP
O-220
O-126
O-220,
0Dlb713
O-220FN
mosfet ftr 03
2SK2711
SC-75A
mosfet 2sk* to-92
oc sc-62 mosfet
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Untitled
Abstract: No abstract text available
Text: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .
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2SB1427
2SD2153
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: Transistors Small switching 200V, 3A 2SK2887 •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d
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2SK2887
SC-63
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: 2S B 1 2 9 0 Transistors I 2S D 1 8 3 3 Power Transistor —80V, —7A 2SB1290 •F e a tu re s •A b s o lu te maximum ratings (Ta=25t2) 1) L o w VcE(sat). (T y p .— 0 .3 V a t Ic/ I b = — 4 / — 0 .4 A ) Param eter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .
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2SB1290
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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Untitled
Abstract: No abstract text available
Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)
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2SB1189
2SB1238
2SB899F
2SD1767
2SD1859
2SD1200F
2SB889F
2SD1767/2SD1859/2SD1200F.
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTD143TK •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s re s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it 2 .9 ± 0 .2 w ith o u t c o n n e c tin g e x te rn a l in p u t
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DTD143TK
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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Untitled
Abstract: No abstract text available
Text: DTB114GK DTD144GK Transistors Digital transistors built-in resistors DTB114GK I •A bsolu te maximum ratings (Ta“ 2Sfc) •Features 1 ) The built-in bias resistors consist of thin-film resistors with complete Isolation to allow positive biasing of the Input, and
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DTB114GK
DTD144GK
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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transistor marking B5
Abstract: No abstract text available
Text: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A UMG1N / U M H IN / UMH5N / FMG1A / IM H1A / IMH5A Transistors Digital Transistor Dual Digital Transistors for Inverter Driver UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A I •A bsolu te maximum ratings (Ta=25°C)
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DTA124E
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
transistor marking B5
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OTA114Y
Abstract: No abstract text available
Text: UMA8N / FMA8A UMG5N / FMG5A Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I U M A 8N / FMA8A •A bsolu te maximum ratings (Ta—2 5 t ) •Features 1 ) Two OTA114Y transistors are housed in a UMT or SMT package Symbol Limits
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OTA114Y
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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Untitled
Abstract: No abstract text available
Text: DTB133HK / DTB133HS DTD133HK / DTD133HS Transistors Digital transistors built-in resistors DTB133HK / DTB133HS I •A b s o lu te maximum ratings (Ta"25'C ) •F eatures 1 ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
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DTB133HK
DTB133HS
DTD133HK
DTD133HS
DTB133HKasy
0Dlb713
O-220FN
O-220FN
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Untitled
Abstract: No abstract text available
Text: IMD8A IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A •F eature« 1 ) DTA144T and DTC144T transistors are housed in a SMT package. •A b s o lu te maximum ratings (Ta“ 25*C) Parameter •C irc u it schematic Symbol
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DTA144T
DTC144T
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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d2400a
Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s
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2SB1275
2SB1236A
2SB1569A
2SB1186A
2SD2211
2SD1918
2SD1857A
2SD2400A
2SD1763A
d2400a
transistor d2400a
2SD1916
2SD1763A
SD1763A
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BC648B
Abstract: No abstract text available
Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking
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BC847B
BC857B.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
BC648B
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Untitled
Abstract: No abstract text available
Text: DTA115GUA / DTA115GKA DTC115GUA / DTC115GKA Transistors Digital transistors built-in resistors I DTA115GUA / DTA115GKA •Features •A bsolu te maximum ratings (Ta=25^C) 1 ) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and
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DTA115GUA
DTA115GKA
DTC115GUA
DTC115GKA
0Dlb713
O-220FN
O-220FN
O220FP
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DTC323TU
Abstract: MARKING H03 DTC343TK DTC343TS DTC323TK DTC323TS T106 T146 94S-751-C343T two transistors
Text: DTC323TU / DTC323TK / DTC323TS DTC343TK / DTC343TS Transistors Digital transistors built-in resistors I DTC323TU / DTC323TK / DTC323TS •A bsolu te maximum ratings (Ta=25‘C ) •Features In addition to the features of regular digital transistors, 1 ) Low VcE(sat) makes these transistors ideal for m uting circuits.
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DTC323TU
DTC323TK
DTC323TS
DTC343TKIDTC343TS
DTC323TS
600mA)
MARKING H03
DTC343TK
DTC343TS
T106
T146
94S-751-C343T
two transistors
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Untitled
Abstract: No abstract text available
Text: D T B 1 22 JK Transistors D T D 1 22 JK Digital transistor built-in resistors DTB122JK I •A bsolu te maximum ratings (Ta=25^C) •Features 1 ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
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DTB122JK
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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