2SK2711
Abstract: No abstract text available
Text: Transistors Switching 250V, 16A 2SK2711 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure
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2SK2711
2SK2711
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rkm 21 transistor
Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Text: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts
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2SK2792
2SK2503
RK7002
rkm 21 transistor
RK7002 equivalent
2SK3016
rkm sot-23
rkm transistor
sot23 a02 Transistor
rkm 45 transistor
2SK2460
rkm 15 transistor
RKM SOT
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mosfet ftr 03
Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Text: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. , 5 + o .a 4 . 5 - 0 ., 10.0+23 2) High-speed switching. „+0.2 •8—0.1 3) W ide SOA (safe operating area). 4) G a te-so urce v o lta g e g u ara ntee d
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2SK2711
O-220FN
O-220FP
O-220
O-126
O-220,
0Dlb713
O-220FN
mosfet ftr 03
2SK2711
SC-75A
mosfet 2sk* to-92
oc sc-62 mosfet
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2SK2711
Abstract: No abstract text available
Text: Transistors Switching 250V, 16A 2SK2711 • F e a tu re s • E x te rn a l dim en sion s (Units: mm) 1 ) Low on-resistance. 0 + 0 .3 2) H igh-speed switching. c + 0 .3 &~0.t ü - 0 .1 3) W ide S O A (safe operating area). ¿ 3 .2 ± 0 .2 4) G a te -s o u rc e v o lta g e g u a ra n te e d
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2SK2711
O-22QFN
00A//iS
2SK2711
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2sk2711
Abstract: UJ1000 S2000B
Text: Transistors Switching 250V, 16A 2SK2711 • Features •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u a ra n te e d at Vgss = ± 3 0 V . 5) Easily designed drive circuits.
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2SK2711
O-220FN
2sk2711
UJ1000
S2000B
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Untitled
Abstract: No abstract text available
Text: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions {Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA {safe operating area). 4) G a te-so urce vo lta g e g u a ra n te e d at Vgss = ± 3 0 V . 5) Easily designed drive circuits.
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2SK2711
2SK2711
15uipm
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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2SK2262
2SK2294
-220FN
2SK2792
2SK2459N
2SK2460N
0-220FN
2SK2713
2SK2793
2SK2540
2SD2576
2sd2396
TA143E
2SK2459N
2SD 92 M
C2N3904
2SB1569A
2SD2061
2SD1189F
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2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598
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2N3904
2N3906
2N4401
2N4403
2SA821S.
2SA830S.
2SA854S.
2SB822
2n4401 331
2n4403 331
2n3904 409
2n3904 331
k 2715
2n3906 331
1352s
MPSA06 346
2N584
C847B
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2SK2540
Abstract: 2SK2294
Text: Transistors/Leaded Type Characteristics MOS FET 1. Can be used with automatic placement machines. Available in various packages with taping for automatic placement. 2. MOS FETs operating from 4 volts These MOS FETs can be driven directly by an IC, significantly reducing the number of components buffer transistors .
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2SK2792
130ns
2SK2262
T0-220FN
O-220FN
2SK2540
2SK2294
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