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    2SD1915F

    Abstract: 2SD1915 XN01504 XN1504
    Text: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD1915F x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01504 XN1504) 2SD1915F 2SD1915F 2SD1915 XN01504 XN1504

    2sd1915F

    Abstract: 2SD1915 vebo 25 XP4506
    Text: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage


    Original     		PDF XP4506 2SD1915F 2sd1915F 2SD1915 vebo 25 XP4506

    2SD1915

    Abstract: 2sd1915F XN04506 XN4506
    Text: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD1915F x 2 elements 0 to 0.1 ● (Ta=25˚C)


    Original     		PDF XN04506 XN4506) 2SD1915F 2SD1915 2sd1915F XN04506 XN4506

    2SD1915F

    Abstract: Panasonic MARKING 2SD1915 XP01504 XP1504
    Text: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1915F x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01504 XP1504) 2SD1915F 2SD1915F Panasonic MARKING 2SD1915 XP01504 XP1504

    2SD1915F

    Abstract: 2SD1915 XP4506 XP04506
    Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage


    Original     		PDF XP04506 XP4506) 2SD1915F 2SD1915F 2SD1915 XP4506 XP04506

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 4 1 0.2±0.1 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package (Emitter-coupled transistors)


    Original     		PDF 2002/95/EC) XP01504 XP1504)

    2SD1915F

    Abstract: XP01504 XP1504 2SD1915
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP01504 XP1504) 2SD1915F XP01504 XP1504 2SD1915

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XN04506 XN4506) 2SD1915F

    2SD1915F

    Abstract: 2SD1915 XN01504 XN1504
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XN01504 XN1504) 2SD1915F 2SD1915 XN01504 XN1504

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SD1915F

    Abstract: 2SD1915 XN04506 XN4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XN04506 XN4506) 2SD1915F 2SD1915 XN04506 XN4506

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN04506 XN4506 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10


    Original     		PDF XN04506 XN4506) 2SD1915F

    2SD1915F

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) XN04506 XN4506) 2SD1915F

    2sd1915F

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 1.25±0.10 2.1±0.1


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2sd1915F

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XP01504 XP1504) 2SD1915F

    2SD1915F

    Abstract: XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915F XP04506 XP4506

    2sd1915f

    Abstract: 2SD1915
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) XN04506G 2sd1915f 2SD1915

    2sd1915F

    Abstract: XP01504 XP1504 2SD1915
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05


    Original     		PDF 2002/95/EC) XP01504 XP1504) 2sd1915F XP01504 XP1504 2SD1915

    2sd1915F

    Abstract: 2SD1915
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name


    Original     		PDF 2002/95/EC) XN04506G 2sd1915F 2SD1915

    2SD1915F

    Abstract: XP04506 XP4506 2SD1915
    Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● ● 4 Features 0.2±0.1 High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 5° ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1


    Original     		PDF XP04506 XP4506) 2SD1915F 2SD1915F XP04506 XP4506 2SD1915

    2sd1915F

    Abstract: 2SD1915 XN01504 XN1504
    Text: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN01504 XN1504) 2SD1915F 2sd1915F 2SD1915 XN01504 XN1504

    2SD1915

    Abstract: 2SD1915F XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915 2SD1915F XP04506 XP4506

    2SD1915F

    Abstract: XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915F XP04506 XP4506