Untitled
Abstract: No abstract text available
Text: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt
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Q02SGÃ
TC59S1604
TC59S1608
TC59S1604/1608
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT TENTATIVE DATA UNDER DEVELOPMENT 2-INPUT OR GATE The TC7SET32 is an advanced high speed C M O S 2-INPUT TC7SET32F O R GATE fabricated with silicon gate C M O S technology. It achieves the high speed operation similar to equivalent
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TC7SET32
TC7SET32F
TC7SET32FU
TCH724fl
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Untitled
Abstract: No abstract text available
Text: - TC74VHC139F/FN/FS DUAL 2 - T O -4 LINE DECODER The TC74VHC139 is an advanced high speed CMOS 2 to 4 LINE DECODER / DEMULTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent
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TC74VHC139F/FN/FS
TC74VHC139
TCH724fl
002731b
0Q2731?
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001BPL/BFL/BFTiyBTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with, an operating cur
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TC551001BPL/BFL/BFTiyBTRL-70/85/10
TC551001BPL
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DS0026CN
Abstract: sn7404 HC801 TCD102C-1 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
Text: TOSHIBA ~b? -CLOGIC/MEMORY} 9 09 72 48 T OS HI BA ^ 0 ^ 7 5 4 0 DOCHSai 5 |~~ ÍL O G I C / M E M O R Y CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device) 67 C 0 9 5 2 1 TCD102C-1 D T-41-55 The TDS102C-1 is a high resolution and high sensitivity 2048 element
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TCD102C-1
T-41-55
TDS102C-1
TCD102C-1
4D22D-C)
14/imxgQ48
Q25-Q05
DS0026CN
sn7404
HC801
2SA1015
T-41-55
logic gate diagram of ic
tri linear CCD
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TÜT724Ö 00 2û 4f l3 20b B THM324000BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM324000BS/BSG is a 4,194,304 words by 32 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 8,388,608 words by 16 bits dynamic RAM module, by means
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THM324000BS/BSG-60/70
THM324000BS/BSG
TC5117400BSJ
OIU31AIV
/09-O
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC 74A CT 1 1 2P/F/FN DATA SILICON M O N O LITH IC DUAL J - K FLIP FLOP WITH PRESET AND CLEAR The TC74ACT112 is an advanced high speed CMOS DUAL JK FLIP FLOP fabricated with silicon gate and double - layer
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TC74ACT112
16PIN
16PIN
200mil
S0P16-P-300)
TCH724fl
150mil
TC74ACT112-6*
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Untitled
Abstract: No abstract text available
Text: -60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3680A0 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 18 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high
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----------------------------THM3680A0S/SG
THM3680A0
TC5116400J
555mW
THMxxxxxx-60)
059mW
THMxxxxxx-70)
TCH724fl
C-101
THM3680A0S/SG
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC514273BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514273BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514273BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC514273BJ-70/80
TC514273BJ
6/I016)
TDT72M
-W16/I016
W1/I01
16/I016
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7WT74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7W T74FU is an advanced high speed CMOS D-FLIP FLOP fabricated w ith silicon gate CMOS technology. It achieves th e high speed operation sim ilar to eq uivalent
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TC7WT74FU
T74FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VH CT374AF/AFW/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT374AF, TC74VHCT374AFW, TC74VHCT374AFT OCTAL D-TYPE FLIP-FLOP WITH 3 -STATE OUTPUT The TC74VHCT374A is an advanced high speed CMOS OCTAL FLIP-FLOP with 3 -STATE OUTPUT fabricated
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TC74VH
CT374AF/AFW/AFT
TC74VHCT374AF,
TC74VHCT374AFW,
TC74VHCT374AFT
TC74VHCT374A
0G3015Ã
TC74VHCT374AF/AFW/AFT
20PIN
200mil
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TC518128CFL
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128CFL/CFWL/CFTL-70V, -80V DATA SILICON GATE CM O S TENTATIVE 131,072 W O R D S X 8 BIT CM O S PSEUDO STATIC RAM DESCRIPTION The TC518128C-V Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072
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TC518128CFL/CFWL/CFTL-70V,
TC518128C-V
int0270
TC518128CFL/
TC518128CFWL
TC518128CFLâ
TC518128CFL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TO SHIBA CIRCUIT TECHNICAL TC74LVQ245F, TC74LVQ245FW TC74LVQ245FS DATA SILICON M O NO LITHIC OCTAL BUS TRANSCEIVER The TC74LVQ245 is a high speed CMOS OCTAL BUS TRANSCEIVER fabricated w ith silicon gate and d ou b le
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TC74LVQ245F,
TC74LVQ245FW
TC74LVQ245FS
TC74LVQ245
LVQ245F,
SOL20-P-300-1
TC74LVQ245F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W 66F/FU Dual Bilateral Switch The TC7W66 is a high speed C2MOS Dual Bilateral Switch fabricated with silicon gate C2MOS technology. It consists of four independent high speed switches capable of con trolling either digital or analog signals while maintaining the C2MOS low
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66F/FU
TC7W66
2757R
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Untitled
Abstract: No abstract text available
Text: - TC74VHC595F/FN/FS 8 -BIT SHIFT REGISTER/LATCH 3 -STATE _ The TC74VHC595 is an advanced high speed 8 -BIT SHIFT REGISTER / LATCH fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74VHC595F/FN/FS
TC74VHC595
TCH724fl
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TC5816AFT
Abstract: No abstract text available
Text: TOSHIBA TC 5816A D C 16Mbit 2M X 8 BIT CMOS NAND EEPROM PRELIMINARY Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programma ble Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a
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16Mbit
TC5816
TC5816AFT
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tc5118160
Abstract: No abstract text available
Text: INTEGRATED . TO S H IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118160AJ / AFT - 60 TC5118160AJ / AFT - 70 SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 words by 16 bits.
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TC5118160AJ
TC5118160AJ/AFT
TC5118160AJ/AFr
5H8160
5U8160A
J/AFT-32
tc5118160
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHC132F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC132F, TC74VHC132FN, TC74VHC132FS, TC74VHC132FT QUAD 2 -INPUT SCHMITT NAND GATE The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS
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TC74VHC132F/FN/FS/FT
TC74VHC132F,
TC74VHC132FN,
TC74VHC132FS,
TC74VHC132FT
TC74VHC132
TC74VHC00
14PIN
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T C 55257C P iy C F iy C S P iy C F IL /C T R L - 70L / 85iy i 0L PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description T h e T C 5 5 2 5 7 C P L is a 2 6 2 ,1 4 4 bit C M O S static random acce ss m e m ory organized as 3 2 ,7 6 8 w o rd s by 8 bits and operated from
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55257C
F70IL
TCH724fl
D2b213
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHC573F/FW/FS/FT TOSHIBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC573F, TC74VHC573FW, TC74VHC573FS, TC74VHC573FT OCTAL D-TYPE LATCH WITH 3 -STATE OUTPUT The TC74VHC573 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon gate
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TC74VHC573F/FW/FS/FT
TC74VHC573F,
TC74VHC573FW,
TC74VHC573FS,
TC74VHC573FT
TC74VHC573
20PIN
300mil
SOL20-P-300-1
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Untitled
Abstract: No abstract text available
Text: TC4S69F TC4S69F INVERTER GATE U nit in mm + 0.2 28-03 The TC4S69F is three stage inverter. The output is provided with the buffer, the input / output voltage characteristic has been improved. Thus an increase in propagation delay time caused by an increase in load capacity is kept to a
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TC4S69F
TC4S69F)
TC4S69F
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tc55v328aj
Abstract: No abstract text available
Text: TOSHIBA TC55V328AJ-15/17/20 SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS STATIC RAM Description The TC55V328AJ is a 262,144 bits high speed static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 3.3-volt supply. Toshiba’s CMOS technology and advanced circuit form pro
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TC55V328AJ-15/17/20
TC55V328AJ
28-pin
300mil
SR25011294
SOJ28-P-300A)
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TC5816AFT
Abstract: toshiba NAND ID code d33 02C
Text: TOSHIBA TC 5816A FT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC 5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register
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16Mbit
RCn724fl
NV16010196
TC5816AFT
TSOP44-P-400B
TC5816AFT
toshiba NAND ID code
d33 02C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VH C540,541F/FW/FS/FT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC540F, TC74VHC540FW, TC74VHC540FS, TC74VHC540FT TC74VHC541F, TC74VHC541FW, TC74VHC541 FS, TC74VHC541FT OCTAL BUS BUFFER TC74VHC540 F / F W / FS/ FT INVERTED. 3 - STATE OUTPUTS
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TC74VH
541F/FW/FS/FT
TC74VHC540F,
TC74VHC540FW,
TC74VHC540FS,
TC74VHC540FT
TC74VHC541F,
TC74VHC541FW,
TC74VHC541
TC74VHC541FT
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